| Nature of carrier injection in metal/2D-semiconductor interface and its implications for the limits of contact resistance D Somvanshi, S Kallatt, C Venkatesh, S Nair, G Gupta, JK Anthony, ... Physical Review B 96 (20), 205423, 2017 | 93 | 2017 |
| Ultraviolet Detection Properties of p-Si/n-TiO2Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol–Gel Methods: A Comparative Study G Rawat, D Somvanshi, H Kumar, Y Kumar, C Kumar, S Jit IEEE Transactions on Nanotechnology 15 (2), 193-200, 2015 | 77 | 2015 |
| Mean barrier height and Richardson constant for Pd/ZnO thin film-based Schottky diodes grown on n-Si substrates by thermal evaporation method D Somvanshi, S Jit IEEE electron device letters 34 (10), 1238-1240, 2013 | 68 | 2013 |
| Sol-gel-based highly sensitive Pd/n-ZnO thin film/n-Si Schottky ultraviolet photodiodes AB Yadav, A Pandey, D Somvanshi, S Jit IEEE Transactions on Electron Devices 62 (6), 1879-1884, 2015 | 59 | 2015 |
| Analysis of temperature-dependent electrical characteristics of n-ZnO nanowires (NWs)/p-Si heterojunction diodes D Somvanshi, S Jit IEEE transactions on nanotechnology 13 (1), 62-69, 2013 | 58 | 2013 |
| Electrical and ultraviolet-A detection properties of E-beam evaporated n-TiO2 capped p-Si nanowires heterojunction photodiodes G Rawat, D Somvanshi, Y Kumar, H Kumar, C Kumar, S Jit IEEE Transactions on Nanotechnology 16 (1), 49-57, 2016 | 43 | 2016 |
| Improved Current Density and Contact Resistance in Bilayer MoSe2 Field Effect Transistors by AlOx Capping D Somvanshi, E Ber, CS Bailey, E Pop, E Yalon ACS applied materials & interfaces 12 (32), 36355-36361, 2020 | 42 | 2020 |
| Effective Richardson Constant of Sol-Gel Derived TiO2 Films in n-TiO2/p-Si Heterojunctions G Rawat, H Kumar, Y Kumar, C Kumar, D Somvanshi, S Jit IEEE Electron Device Letters 38 (5), 633-636, 2017 | 38 | 2017 |
| Transition metal dichalcogenides based two-dimensional heterostructures for optoelectronic applications D Somvanshi, S Jit 2D Nanoscale Heterostructured Materials, 125-149, 2020 | 37 | 2020 |
| Analysis of I–V characteristics of Pd/ZnO thin film/n-Si schottky diodes with series resistance D Somvanshi, S Jit Journal of Nanoelectronics and Optoelectronics 9 (1), 21-26, 2014 | 33 | 2014 |
| Pd/ZnO nanoparticles based Schottky ultraviolet photodiodes grown on Sn-coated n-Si substrates by thermal evaporation method D Somvanshi, S Jit IEEE journal of selected topics in quantum electronics 20 (6), 120-125, 2014 | 29 | 2014 |
| Advances in 2D materials based mixed-dimensional heterostructures photodetectors: Present status and challenges D Somvanshi, S Jit Materials Science in Semiconductor Processing 164, 107598, 2023 | 25 | 2023 |
| Ultraviolet detection characteristics of Pd/n-ZnO thin film Schottky photodiodes grown on n-Si substrates D Somvanshi, A Pandey, S Jit Journal of nanoelectronics and optoelectronics 8 (4), 349-354, 2013 | 23 | 2013 |
| A systematic study on the electronic structure of 3d, 4d, and 5d transition metal-doped WSe2 monolayer S Chowdhury, P Venkateswaran, D Somvanshi Superlattices and Microstructures 148, 106746, 2020 | 22 | 2020 |
| Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors R Pendurthi, NU Sakib, MUK Sadaf, Z Zhang, Y Sun, C Chen, ... Nature nanotechnology 19 (7), 970-977, 2024 | 20 | 2024 |
| Functionalized polyvinyl chloride/layered double hydroxide nanocomposites and its thermal and mechanical properties M Singh, D Somvanshi, RK Singh, AK Mahanta, P Maiti, N Misra, P Paik Journal of Applied Polymer Science 137 (27), 48894, 2020 | 15 | 2020 |
| Effect of ZnO seed layer on the electrical characteristics of Pd/ZnO thin-film-based Schottky contacts grown on n-Si substrates D Somvanshi, S Jit IEEE Transactions on Nanotechnology 13 (6), 1138-1144, 2014 | 15 | 2014 |
| Effects of Sn and Zn seed layers on the electrical characteristics of Pd/ZnO thin-film Schottky diodes grown on n-Si substrates D Somvanshi, S Jit IEEE Electron Device Letters 35 (9), 945-947, 2014 | 15 | 2014 |
| Electronic structure and optical properties of GaTe/MoTe2 based vdW heterostructure under mechanical strain and external electric fields S Chowdhury, A Mishra, P Venkateswaran, D Somvanshi Materials Science in Semiconductor Processing 163, 107572, 2023 | 9 | 2023 |
| Recent progress on extended wavelength and split-off band heterostructure infrared detectors H Ghimire, PVV Jayaweera, D Somvanshi, Y Lao, AGU Perera Micromachines 11 (6), 547, 2020 | 9 | 2020 |
Satyabrata JitIndian Institute of Technology (Banaras Hindu University) Varanasi, IndiaDirección de correo verificada de iitbhu.ac.in
