Deposition of metal films using alane-based precursors X Lu, D Thompson, JW Anthis, M Chang, S Ganguli, W Tang, S Gandikota, ...
US Patent 8,927,059, 2015
482 2015 Methods for depositing fluorine/carbon-free conformal tungsten X Fu, S Gandikota, AV Gelatos, A Noori, M Chang, D Thompson, ...
US Patent 9,230,815, 2016
479 2016 Methods of fabricating dielectric films from metal amidinate precursors S Hung, A Noori, D Thompson, Y Senzaki
US Patent 9,269,574, 2016
363 2016 Deposition of N-metal films comprising aluminum alloys S Gandikota, X Lu, SC Chen, W Tang, J Zhou, S Ganguli, D Thompson, ...
US Patent 9,145,612, 2015
333 2015 System and method for light socket adaptation AM Noori, GWY Kwan, K Rohling, KD Wolfe, LW Wolfe, S Arnold
US Patent 9,526,153, 2016
76 2016 HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation K Joshi, S Hung, S Mukhopadhyay, V Chaudhary, N Nanaware, ...
2013 IEEE international reliability physics symposium (IRPS), 4C. 2.1-4C. 2.10, 2013
65 2013 Method of forming non-volatile memory having charge trap layer with compositional gradient M Balseanu, V Zubkov, LQ Xia, A Noori, R Arghavani, DR Witty, ...
US Patent 7,816,205, 2010
57 2010 Manufacturable Processes for AM Noori, M Balseanu, P Boelen, A Cockburn, S Demuynck, S Felch, ...
IEEE transactions on electron devices 55 (5), 1259-1264, 2008
52 2008 Growth characteristics and film properties of cerium dioxide prepared by plasma-enhanced atomic layer deposition WH Kim, MK Kim, WJ Maeng, J Gatineau, V Pallem, C Dussarrat, A Noori, ...
Journal of The Electrochemical Society 158 (8), G169, 2011
46 2011 The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition I Oh, MK Kim, J Lee, CW Lee, C Lansalot-Matras, W Noh, J Park, A Noori, ...
Applied surface science 287, 349-354, 2013
45 2013 Materials issues for the heterogeneous integration of III-V compounds: Exfoliation and layer transfer S Hayashi, M Goorsky, A Noori, D Bruno
Journal of the Electrochemical Society 153 (12), G1011, 2006
44 2006 Atomic layer deposition methods for metal gate electrodes Y Lei, S Gandikota, X Fu, W Tang, A Noori
US Patent 9,082,702, 2015
35 2015 Method of forming a non-volatile memory having a silicon nitride charge trap layer M Balseanu, V Zubkov, LQ Xia, A Noori, R Arghavani, DR Witty, ...
US Patent 8,252,653, 2012
29 2012 Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers TS Yoon, J Liu, AM Noori, MS Goorsky, YH Xie
Applied Physics Letters 87 (1), 2005
25 2005 Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology A Veloso, SA Chew, Y Higuchi, LÅ Ragnarsson, E Simoen, T Schram, ...
Japanese Journal of Applied Physics 52 (4S), 04CA02, 2013
23 2013 Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition WH Kim, MK Kim, IK Oh, WJ Maeng, T Cheon, SH Kim, A Noori, ...
Journal of the American Ceramic Society 97 (4), 1164-1169, 2014
21 2014 Uv curing of pecvd-deposited sacrificial polymer films for air-gap ild A Noori, F Schmitt, A Lakshmanan, BH Kim, R Arghavani
US Patent App. 12/017,879, 2008
20 2008 Methods for depositing fluorine/carbon-free conformal tungsten X Fu, S Gandikota, AV Gelatos, A Noori, M Chang, D Thompson, ...
US Patent 9,601,339, 2017
18 2017 Full-field EUV and immersion lithography integration in 0.186μm2 FinFET 6T-SRAM cell A Veloso, S Demuynck, M Ercken, AM Goethals, M Demand, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
18 2008 Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing ST Srinivasan, AM Noori, DK Carlson
US Patent 9,443,728, 2016
16 2016 