Realization of KK Kim, HS Kim, DK Hwang, JH Lim, SJ Park
Applied Physics Letters 83 (1), 63-65, 2003
842 2003 UV electroluminescence emission from ZnO light‐emitting diodes grown by high‐temperature radiofrequency sputtering JH Lim, CK Kang, KK Kim, IK Park, DK Hwang, SJ Park
Advanced Materials 18 (20), 2720-2724, 2006
782 2006 Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride NM Park, CJ Choi, TY Seong, SJ Park
Physical review letters 86 (7), 1355, 2001
664 2001 The future of ZnO light emitters DC Look, B Claflin, YI Alivov, SJ Park
physica status solidi (a) 201 (10), 2203-2212, 2004
588 2004 Surface‐plasmon‐enhanced light‐emitting diodes MK Kwon, JY Kim, BH Kim, IK Park, CY Cho, CC Byeon, SJ Park
Advanced Materials 20 (7), 1253-1257, 2008
577 2008 Band gap engineering of amorphous silicon quantum dots for light-emitting diodes NM Park, TS Kim, SJ Park
Applied Physics Letters 78 (17), 2575-2577, 2001
524 2001 Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p -GaN surface C Huh, KS Lee, EJ Kang, SJ Park
Journal of Applied Physics 93 (11), 9383-9385, 2003
492 2003 p-ZnO/n-GaN heterostructure ZnO light-emitting diodes DK Hwang, SH Kang, JH Lim, EJ Yang, JY Oh, JH Yang, SJ Park
Applied Physics Letters 86 (22), 2005
449 2005 Recent advances in ZnO-based light-emitting diodes YS Choi, JW Kang, DK Hwang, SJ Park
IEEE Transactions on electron devices 57 (1), 26-41, 2009
436 2009 Measuring presence: A literature-based approach to the development of a standardized paper-and-pencil instrument M Lombard, TB Ditton, D Crane, B Davis, G Gil-Egui, K Horvath, ...
Third international workshop on presence, delft, the netherlands 240, 2-4, 2000
417 2000 Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes SH Han, DY Lee, SJ Lee, CY Cho, MK Kwon, SP Lee, DY Noh, DJ Kim, ...
Applied Physics Letters 94 (23), 2009
379 2009 Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes G Jo, M Choe, CY Cho, JH Kim, W Park, S Lee, WK Hong, TW Kim, ...
Nanotechnology 21 (17), 175201, 2010
366 2010 Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3 TW Kim, CH Cho, BH Kim, SJ Park
Applied Physics Letters 88 (12), 2006
330 2006 The grain size effects on the photoluminescence of KK Kim, JH Song, HJ Jung, WK Choi, SJ Park, JH Song
Journal of Applied Physics 87 (7), 3573-3575, 2000
314 2000 Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering DK Hwang, HS Kim, JH Lim, JY Oh, JH Yang, SJ Park, KK Kim, DC Look, ...
Applied Physics Letters 86 (15), 2005
306 2005 ZnO thin films and light-emitting diodes DK Hwang, MS Oh, JH Lim, SJ Park
Journal of Physics D: Applied Physics 40 (22), R387, 2007
266 2007 Environmental correlation of three-dimensional soil spatial variability: a comparison of three adaptive techniques SJ Park, PLG Vlek
Geoderma 109 (1-2), 117-140, 2002
222 2002 Low-resistance and nonalloyed ohmic contacts to plasma treated ZnO JM Lee, KK Kim, SJ Park, WK Choi
Applied Physics Letters 78 (24), 3842-3844, 2001
213 2001 Fabrication of photonic crystal structures on light emitting diodes by nanoimprint lithography SH Kim, KD Lee, JY Kim, MK Kwon, SJ Park
Nanotechnology 18 (5), 055306, 2007
206 2007 Low-resistance Pt/Ni/Au ohmic contacts to p -type GaN JS Jang, IS Chang, HK Kim, TY Seong, S Lee, SJ Park
Applied physics letters 74 (1), 70-72, 1999
201 1999 