| AlGaN/GaN-based laterally gated high-electron-mobility transistors with optimized linearity O Odabaşı, D Yılmaz, E Aras, KE Asan, S Zafar, BÇ Akoğlu, B Bütün, ... IEEE Transactions on Electron Devices 68 (3), 1016-1023, 2021 | 21 | 2021 |
| Exceptional adaptable MWIR thermal emission for ordinary objects covered with thin VO2 film H Kocer, MC Cakir, Y Durna, MC Soydan, O Odabasi, H Isik, K Aydın, ... Journal of Quantitative Spectroscopy and Radiative Transfer 262, 107500, 2021 | 17 | 2021 |
| Improved TMAX Estimation in GaN HEMTs Using an Equivalent Hot Point Approximation O Odabaşı, MÖ Akar, B Bütün, E Özbay IEEE Transactions on Electron Devices 67 (4), 1553-1559, 2020 | 14 | 2020 |
| Impact of the low temperature ohmic contact process on DC and forward gate bias stress operation of GaN HEMT devices O Odabasi, A Ghobadi, TGU Ghobadi, Y Unal, G Salkım, G Basar, B Butun, ... IEEE Electron Device Letters 43 (10), 1609-1612, 2022 | 9 | 2022 |
| Subwavelength densely packed disordered semiconductor metasurface units for photoelectrochemical hydrogen generation TG Ulusoy Ghobadi, A Ghobadi, O Odabasi, F Karadas, E Ozbay ACS Applied Energy Materials 5 (3), 2826-2837, 2022 | 8 | 2022 |
| DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric D Yılmaz, O Odabaşı, G Salkım, E Urfali, BÇ Akoğlu, E Özbay, Ş Altındal Semiconductor Science and Technology 37 (8), 085008, 2022 | 6 | 2022 |
| N-Polar GaN Deep Recess HEMT With Atomic Layer Deposition HfO2 as Gate Insulator O Odabasi, S Mohanty, K Khan, E Ahmadi IEEE Transactions on Electron Devices 70 (9), 4572-4577, 2023 | 5 | 2023 |
| Investigation of ALD HfSiOx as gate dielectric on β-Ga2O3 (001) X Zhai, Z Wen, O Odabasi, E Achamyeleh, K Sun, E Ahmadi Applied Physics Letters 124 (13), 2024 | 4 | 2024 |
| Realistic channel temperature simulation of AlGaN/GaN high electron mobility transistors O Odabaşı, B Bütün, E Özbay 2019 European Microwave Conference in Central Europe (EuMCE), 87-90, 2019 | 4 | 2019 |
| Improved drain lag by reduced surface current in GaN HEMT via an ultrathin HfO2 blanket layer B Güneş, A Ghobadi, O Odabasi, B Bütün, E Özbay Semiconductor Science and Technology 38 (6), 065002, 2023 | 3 | 2023 |
| (010) β-(Alx, Ga1− x) 2O3 growth using tritertiarybutylaluminum as Al gas precursor via hybrid molecular beam epitaxy Z Wen, X Zhai, K Khan, O Odabasi, M Kim, E Ahmadi Applied Physics Letters 125 (16), 2024 | 2 | 2024 |
| Nanometer-Thick Insertion Layer for the Effective Passivation of Surface Traps and Improved Edge Acuity for AlGaN/GaN HEMTs O Odabasi, A Ghobadi, TGU Ghobadi, E Guneysu, E Urfali, G Yaglioglu, ... IEEE Transactions on Electron Devices 70 (10), 5081-5086, 2023 | 2 | 2023 |
| Unveiling Tmax Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements S Zafar, Y Durna, H Kocer, BC Akoglu, YE Aras, O Odabasi, B Butun, ... IEEE Transactions on Device and Materials Reliability 23 (1), 72-79, 2022 | 1 | 2022 |
| Improved Robustness, Stability and Linearity in GaN Based High Electron Mobility Transistors for 5G Applications O Odabaşı PQDT-Global, 2021 | 1 | 2021 |
| Demonstration of Normally-Off N-Polar GaN Deep Recess HEMT O Odabasi, MI Khan, K Khan, E Ahmadi IEEE Microwave and Wireless Technology Letters, 2024 | | 2024 |
| Ultrathin interfacial layer and pre-gate annealing to suppress virtual gate formation in GaN-based transistors: The impact of trapping and fluorine inclusion O Odabasi, A Ghobadi, TGU Ghobadi, B Butun, E Ozbay IEEE Electron Device Letters 43 (10), 1613-1616, 2022 | | 2022 |
| 1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA 2. Department of Electrical Engineering and Computer Science … Z Wen, X Zhai, K Khan, O Odabasi, M Kim, E Ahmadi | | |
| Nanometer-thick ınsertion layer for the effective passivation of surface traps and ımproved edge acuity for AlGaN/GaN HEMTs O Odabaşı, A Ghobadi, TGU Ghobadi, E Güneysu, E Urfalı, G Yağlıoğlu, ... Institute of Electrical and Electronics Engineers, 0 | | |
| Exceptional adaptable MWIR thermal emission for ordinary objects covered with thin VO2 film Y Durna, H Kocer, K Aydın, MC Cakir, MC Soydan, O Odabasi, H Işık, ... Elsevier Ltd, 0 | | |
| Impact of the low temperature ohmic contact process on DC and forward gate bias stress operation of GaN HEMT devices O Odabaşı, A Ghobadi, TGU Ghobadi, Y Ünal, G Salkım, G Başar, B Bütün, ... Institute of Electrical and Electronics Engineers, 0 | | |
Ekmel OzbayProfessor, Bilkent University, Ankara, TURKEYDirección de correo verificada de bilkent.edu.tr