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Nikolaos Makris
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CMOS small-signal and thermal noise modeling at high frequencies
A Antonopoulos, M Bucher, K Papathanasiou, N Mavredakis, N Makris, ...
IEEE transactions on electron devices 60 (11), 3726-3733, 2013
472013
Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout
M Bucher, A Nikolaou, A Papadopoulou, N Makris, L Chevas, G Borghello, ...
2018 IEEE International Conference on Microelectronic Test Structures (ICMTS …, 2018
272018
Charge-based model for junction FETs
F Jazaeri, N Makris, A Saeidi, M Bucher, JM Sallese
IEEE Transactions on Electron Devices 65 (7), 2694-2698, 2018
202018
Analog performance of advanced CMOS in weak, moderate, and strong inversion
M Bucher, G Diles, N Makris
Proceedings of the 17th International Conference Mixed Design of Integrated …, 2010
202010
Generalized constant current method for determining MOSFET threshold voltage
M Bucher, N Makris, L Chevas
IEEE Transactions on Electron Devices 67 (11), 4559-4562, 2020
192020
Modeling of high total ionizing dose (TID) effects for enclosed layout transistors in 65 nm bulk CMOS
A Nikolaou, M Bucher, N Makris, A Papadopoulou, L Chevas, G Borghello, ...
2018 International Semiconductor Conference (CAS), 133-136, 2018
162018
Charge-based modeling of long-channel symmetric double-gate junction FETs—Part II: Total charges and transcapacitances
N Makris, F Jazaeri, JM Sallese, M Bucher
IEEE Transactions on Electron Devices 65 (7), 2751-2756, 2018
162018
Investigation of scaling and temperature effects in total ionizing dose (TID) experiments in 65 nm CMOS
L Chevas, A Nikolaou, M Bucher, N Makris, A Papadopoulou, A Zografos, ...
2018 25th International Conference" Mixed Design of Integrated Circuits and …, 2018
152018
Charge-Based Compact Model for Bias-Dependent Variability of 1/ Noise in MOSFETs
N Mavredakis, N Makris, P Habas, M Bucher
IEEE Transactions on Electron Devices 63 (11), 4201-4208, 2016
152016
Charge-based modeling of long-channel symmetric double-gate junction FETs—Part I: Drain current and transconductances
N Makris, F Jazaeri, JM Sallese, RK Sharma, M Bucher
IEEE Transactions on Electron Devices 65 (7), 2744-2750, 2018
142018
CMOS RF noise, scaling, and compact modeling for RFIC design
A Antonopoulos, M Bucher, K Papathanasiou, N Makris, RK Sharma, ...
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 53-56, 2013
142013
CJM: a compact model for double-gate junction FETs
N Makris, M Bucher, F Jazaeri, JM Sallese
IEEE Journal of the Electron Devices Society 7, 1191-1199, 2019
132019
Investigation of the dose-and time-dependence of the induction of different types of cell death in a small-cell lung cancer cell line: Implementation of the repairable …
N Makris, M Edgren, P Mavroidis, BK Lind
International Journal of Oncology 42 (6), 2019-2027, 2013
102013
A compact model for static and dynamic operation of symmetric double-gate junction FETs
N Makris, M Bucher, F Jazaeri, JM Sallese
2018 48th European Solid-State Device Research Conference (ESSDERC), 238-241, 2018
92018
Extending a 65nm CMOS process design kit for high total ionizing dose effects
A Nikolaou, M Bucher, N Makris, A Papadopoulou, L Chevas, G Borghello, ...
2018 7th International Conference on Modern Circuits and Systems …, 2018
92018
Comparison of impact ionization models for 4H-SiC Along the< 0001> direction, through breakdown voltage simulations at room temperature
D Stefanakis, N Makris, K Zekentes, D Tassis
IEEE Transactions on Electron Devices 68 (5), 2582-2586, 2021
72021
Compact modeling of low frequency noise and thermal noise in junction field effect transistors
N Makris, L Chevas, M Bucher
ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019
72019
Foss ekv2. 6 verilog-a compact mosfet model
W Grabinski, M Pavanello, M de Souza, D Tomaszewski, J Malesinska, ...
ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019
72019
Variability of low frequency noise and mismatch in enclosed-gate and standard nMOSFETs
M Bucher, A Nikolaou, N Mavredakis, N Makris, M Coustans, J Lolivier, ...
2017 International Conference of Microelectronic Test Structures (ICMTS), 1-4, 2017
72017
Charge-based compact model for bias-dependent variability of 1
N Mavredakis, N Makris, P Habas, M Bucher
IEEE Trans. Electron Devices 63 (11), 4201-4208, 2016
52016
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