| Crystal growth technology: from fundamentals and simulation to large-scale production HJ Scheel, P Capper John Wiley & Sons, 2011 | 337 | 2011 |
| Crystal growth processes based on capillarity: Czochralski, floating zone, shaping and crucible techniques T Duffar John Wiley & Sons, 2010 | 167 | 2010 |
| Effects of sodium on electrical properties in Cu2ZnSnS4 single crystal A Nagaoka, H Miyake, T Taniyama, K Kakimoto, Y Nose, MA Scarpulla, ... Applied Physics Letters 104 (15), 2014 | 149 | 2014 |
| Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model L Liu, K Kakimoto International Journal of Heat and Mass Transfer 48 (21-22), 4481-4491, 2005 | 142 | 2005 |
| Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells L Liu, S Nakano, K Kakimoto Journal of Crystal Growth 310 (7-9), 2192-2197, 2008 | 139 | 2008 |
| Direct observation by X-ray radiography of convection of molten silicon in the Czochralski growth method K Kakimoto, M Eguchi, H Watanabe, T Hibiya Journal of crystal growth 88 (3), 365-370, 1988 | 123 | 1988 |
| Temperature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR-IA-4 rocket S Nakamura, T Hibiya, K Kakimoto, N Imaishi, S Nishizawa, A Hirata, ... Journal of Crystal Growth 186 (1-2), 85-94, 1998 | 112 | 1998 |
| Study on thermal stress in a silicon ingot during a unidirectional solidification process XJ Chen, S Nakano, LJ Liu, K Kakimoto Journal of Crystal Growth 310 (19), 4330-4335, 2008 | 100 | 2008 |
| Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells B Gao, XJ Chen, S Nakano, K Kakimoto Journal of Crystal Growth 312 (9), 1572-1576, 2010 | 96 | 2010 |
| Spoke patterns on molten silicon in Czochralski system KW Yi, K Kakimoto, M Eguchi, M Watanabe, T Shyo, T Hibiya Journal of crystal growth 144 (1-2), 20-28, 1994 | 94 | 1994 |
| Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal A Nagaoka, H Miyake, T Taniyama, K Kakimoto, K Yoshino Applied Physics Letters 103 (11), 2013 | 92 | 2013 |
| Natural and forced convection of molten silicon during Czochralski single crystal growth K Kakimoto, M Eguchi, H Watanabe, T Hibiya Journal of crystal growth 94 (2), 412-420, 1989 | 92 | 1989 |
| Temperature and energy dependences of capture cross sections at surface states in Si metal‐oxide‐semiconductor diodes measured by deep level transient spectroscopy T Katsube, K Kakimoto, T Ikoma Journal of Applied Physics 52 (5), 3504-3508, 1981 | 92 | 1981 |
| Raman spectra from Ga1− xInxAs epitaxial layers grown on GaAs and InP substrates K Kakimoto, T Katoda Applied Physics Letters 40 (9), 826-828, 1982 | 91 | 1982 |
| Dynamic simulation of temperature and iron distributions in a casting process for crystalline silicon solar cells with a global model L Liu, S Nakano, K Kakimoto Journal of Crystal Growth 292 (2), 515-518, 2006 | 85 | 2006 |
| Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell H Matsuo, RB Ganesh, S Nakano, L Liu, Y Kangawa, K Arafune, ... Journal of Crystal Growth 310 (22), 4666-4671, 2008 | 82 | 2008 |
| Crystal growth of Si for solar cells K Nakajima, N Usami Springer, 2009 | 78 | 2009 |
| Observation of low-temperature elastic softening due to vacancy in crystalline silicon T Goto, H Yamada-Kaneta, Y Saito, Y Nemoto, K Sato, K Kakimoto, ... journal of the physical society of japan 75 (4), 044602, 2006 | 71 | 2006 |
| Oxygen transfer during single silicon crystal growth in Czochralski system with vertical magnetic fields K Kakimoto, KW Yi, M Eguchi Journal of crystal growth 163 (3), 238-242, 1996 | 70 | 1996 |
| Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells S Nakano, XJ Chen, B Gao, K Kakimoto Journal of Crystal Growth 318 (1), 280-282, 2011 | 66 | 2011 |
Yoshihiro KangawaRIAM, Kyushu UniversityDirección de correo verificada de riam.kyushu-u.ac.jp
