| Lasing in direct-bandgap GeSn alloy grown on Si S Wirths, R Geiger, N von den Driesch, G Mussler, T Stoica, S Mantl, ... Nature Photonics, 2015 | 1368 | 2015 |
| Analysis of enhanced light emission from highly strained germanium microbridges MJ Süess, R Geiger, RA Minamisawa, G Schiefler, J Frigerio, D Chrastina, ... Nature Photonics 7 (6), 466-472, 2013 | 490 | 2013 |
| Optically pumped GeSn Microdisk Lasers on Si D Stange, S Wirths, R Geiger, C Schulte-Braucks, B Marzban, N Driesch, ... ACS Photonics 3 (7), 1279-1285, 2016 | 264 | 2016 |
| Group IV direct band gap photonics: Methods, Challenges and Opportunities R Geiger, T Zabel, H Sigg Frontiers in Materials 2, 52, 2015 | 147 | 2015 |
| Excess carrier lifetimes in Ge layers on Si R Geiger, J Frigerio, MJ Süess, D Chrastina, G Isella, R Spolenak, J Faist, ... Applied Physics Letters 104 (6), 062106, 2014 | 100 | 2014 |
| 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications A Gassenq, K Guilloy, GO Dias, N Pauc, D Rouchon, JM Hartmann, ... Applied Physics Letters 107 (19), 191904, 2015 | 94 | 2015 |
| SiGeSn ternaries for efficient group IV heterostructure light emitters N von den Driesch, D Stange, S Wirths, D Rainko, I Povstugar, A Savenko, ... Small 13 (16), 1603321, 2017 | 73 | 2017 |
| Germanium under High Tensile Stress: Nonlinear Dependence of Direct Band Gap vs Strain K Guilloy, N Pauc, A Gassenq, YM Niquet, JM Escalante, I Duchemin, ... ACS Photonics 3 (10), 1907-1911, 2016 | 71 | 2016 |
| Power-dependent Raman analysis of highly strained Si nanobridges MJ Süess, RA Minamisawa, R Geiger, KK Bourdelle, H Sigg, ... Nano letters 14 (3), 1249-1254, 2014 | 55 | 2014 |
| Accurate strain measurements in highly strained Ge microbridges A Gassenq, S Tardif, K Guilloy, G Osvaldo Dias, N Pauc, I Duchemin, ... Applied Physics Letters 108 (24), 241902, 2016 | 52 | 2016 |
| Transient mid-IR study of electron dynamics in TiO2 conduction band J Sá, P Friedli, R Geiger, P Lerch, MH Rittmann-Frank, CJ Milne, ... Analyst 138 (7), 1966-1970, 2013 | 25 | 2013 |
| Ultra-high amplified strains in 200-mm optical germanium-on-insulator (GeOI) substrates: towards CMOS-compatible Ge lasers V Reboud, A Gassenq, GO Dias, K Guilloy, JM Escalante, S Tardif, ... SPIE OPTO, 97520F-97520F-8, 2016 | 24 | 2016 |
| Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications V Reboud, J Widiez, JM Hartmann, GO Dias, D Fowler, A Chelnokov, ... SPIE OPTO, 936714-936714-6, 2015 | 22 | 2015 |
| A Patterning-Based Strain Engineering for Sub-22 nm Node FinFETs M Schmidt, MJ Süess, AD Barros, R Geiger, H Sigg, R Spolenak, ... Electronic Device Letters 99, 1-1, 2014 | 22 | 2014 |
| Uniaxially stressed germanium with fundamental direct band gap R Geiger, T Zabel, E Marin, A Gassenq, JM Hartmann, J Widiez, ... arXiv preprint arXiv:1603.03454, 2015 | 21 | 2015 |
| Determining the directional strain shift coefficients for tensile Ge: a combined x-ray diffraction and Raman spectroscopy study T Etzelstorfer, A Wyss, MJ Süess, FF Schlich, R Geiger, J Frigerio, ... Measurement Science and Technology 28 (2), 025501, 2017 | 18 | 2017 |
| Top-down method to introduce ultra-high elastic strain T Zabel, R Geiger, E Marin, E Müller, A Diaz, C Bonzon, MJ Süess, ... Journal of Materials Research 32 (4), 726-736, 2017 | 13 | 2017 |
| GeSn lasers for CMOS integration D Buca, N von den Driesch, D Stange, S Wirths, R Geiger, CS Braucks, ... Electron Devices Meeting (IEDM), 2016 IEEE International, 22.3. 1-22.3. 4, 2016 | 13 | 2016 |
| Direct Band Gap Germanium for Si-compatible Lasing R Geiger Dissertation, ETH-Zürich, 2016, Nr. 23403, 2016 | 11 | 2016 |
| Direct bandgap GeSn microdisk lasers at 2.5¿¿ m for monolithic integration on Si-platform S Wirths, R Geiger, C Schulte-Braucks, N von den Driesch, D Stange, ... 2015 IEEE International Electron Devices Meeting (IEDM), 2.6. 1-2.6. 4, 2015 | 8 | 2015 |
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