| Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ... Advanced Materials 27 (11), 1811-1831, 2015 | 1094 | 2015 |
| Review and perspective on ferroelectric HfO2-based thin films for memory applications MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang MRS Communications 8 (3), 795-808, 2018 | 501 | 2018 |
| Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ... Nanoscale 9 (28), 9973-9986, 2017 | 348 | 2017 |
| Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer HJ Kim, MH Park, YJ Kim, YH Lee, W Jeon, T Gwon, T Moon, KD Kim, ... Applied Physics Letters 105 (19), 192903, 2014 | 273 | 2014 |
| A study on the wake-up effect of ferroelectric Hf 0.5 Zr 0.5 O 2 films by pulse-switching measurement HJ Kim, MH Park, YJ Kim, YH Lee, T Moon, K Do Kim, SD Hyun, ... Nanoscale 8 (3), 1383-1389, 2016 | 262 | 2016 |
| Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, K Do Kim, SD Hyun, ... Nanoscale 10 (2), 716-725, 2018 | 231 | 2018 |
| Ferroelectricity in undoped-HfO 2 thin films induced by deposition temperature control during atomic layer deposition KD Kim, MH Park, HJ Kim, YJ Kim, T Moon, YH Lee, SD Hyun, T Gwon, ... Journal of Materials Chemistry C 4 (28), 6864-6872, 2016 | 227 | 2016 |
| Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films MH Park, HJ Kim, YJ Kim, YH Lee, T Moon, KD Kim, SD Hyun, F Fengler, ... ACS applied materials & interfaces 8 (24), 15466-15475, 2016 | 213 | 2016 |
| Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang Advanced Electronic Materials 5 (3), 1800522, 2019 | 175 | 2019 |
| Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling MH Park, HJ Kim, YJ Kim, YH Lee, T Moon, KD Kim, SD Hyun, CS Hwang Applied Physics Letters 107 (19), 192907, 2015 | 163 | 2015 |
| Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2 Thin Films MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, YH Lee, SD Hyun, CS Hwang Advanced Materials 28 (36), 7956-7961, 2016 | 134 | 2016 |
| Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors K Do Kim, YH Lee, T Gwon, YJ Kim, HJ Kim, T Moon, SD Hyun, HW Park, ... Nano Energy 39, 390-399, 2017 | 114 | 2017 |
| Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf 0.5 Zr 0.5 O 2 thin films MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, YH Lee, SD Hyun, CS Hwang Journal of Materials Chemistry C 3 (24), 6291-6300, 2015 | 111 | 2015 |
| Preparation and characterization of ferroelectric Hf0. 5Zr0. 5O2 thin films grown by reactive sputtering YH Lee, HJ Kim, T Moon, K Do Kim, SD Hyun, HW Park, YB Lee, MH Park, ... Nanotechnology 28 (30), 305703, 2017 | 109 | 2017 |
| Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers YJ Kim, H Yamada, T Moon, YJ Kwon, CH An, HJ Kim, KD Kim, YH Lee, ... Nano letters 16 (7), 4375-4381, 2016 | 93 | 2016 |
| Voltage drop in a ferroelectric single layer capacitor by retarded domain nucleation YJ Kim, HW Park, SD Hyun, HJ Kim, KD Kim, YH Lee, T Moon, YB Lee, ... Nano letters 17 (12), 7796-7802, 2017 | 78 | 2017 |
| Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films YH Lee, SD Hyun, HJ Kim, JS Kim, C Yoo, T Moon, KD Kim, HW Park, ... Advanced Electronic Materials 5 (2), 1800436, 2019 | 75 | 2019 |
| Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf0.5Zr0.5O2 Thin Films SD Hyun, HW Park, YJ Kim, MH Park, YH Lee, HJ Kim, YJ Kwon, T Moon, ... ACS applied materials & interfaces 10 (41), 35374-35384, 2018 | 71 | 2018 |
| Transient Negative Capacitance Effect in Atomic‐Layer‐Deposited Al2O3/Hf0.3Zr0.7O2 Bilayer Thin Film KD Kim, YJ Kim, MH Park, HW Park, YJ Kwon, YB Lee, HJ Kim, T Moon, ... Advanced Functional Materials 29 (17), 1808228, 2019 | 65 | 2019 |
| Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure YJ Kim, MH Park, YH Lee, HJ Kim, W Jeon, T Moon, K Do Kim, DS Jeong, ... Scientific reports 6, 19039, 2016 | 58 | 2016 |
