Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in F Masia, G Pettinari, A Polimeni, M Felici, A Miriametro, M Capizzi, ... Physical Review B—Condensed Matter and Materials Physics 73 (7), 073201, 2006 | 139 | 2006 |
Role of electronic correlation in the Si (100) reconstruction: a quantum Monte Carlo study SB Healy, C Filippi, P Kratzer, E Penev, M Scheffler Physical Review Letters 87 (1), 016105, 2001 | 127 | 2001 |
Quantum Monte Carlo Calculations of Dissociation on Si(001) C Filippi, SB Healy, P Kratzer, E Pehlke, M Scheffler Physical review letters 89 (16), 166102, 2002 | 110 | 2002 |
Active Region Design for High-Speed 850-nm VCSELs SB Healy, EP O'Reilly, JS Gustavsson, P Westbergh, Å Haglund, ... IEEE Journal of Quantum Electronics 46 (4), 506-512, 2010 | 105 | 2010 |
Breakup of the conduction band structure of dilute alloys A Patanè, J Endicott, J Ibáñez, PN Brunkov, L Eaves, SB Healy, A Lindsay, ... Physical Review B—Condensed Matter and Materials Physics 71 (19), 195307, 2005 | 51 | 2005 |
Built-in field control in alloyed c-plane III-N quantum dots and wells MA Caro, S Schulz, SB Healy, EP O’Reilly Journal of Applied Physics 109 (8), 2011 | 48 | 2011 |
Influence of electrostatic confinement on optical gain in GaInNAs quantum-well lasers SB Healy, P O'Reilly IEEE journal of quantum electronics 42 (6), 608-615, 2006 | 37 | 2006 |
Experimental and theoretical study of InAs/InGaAsP/InP quantum dash lasers SC Heck, S Osborne, SB Healy, EP O'Reilly, F Lelarge, F Poingt, ... IEEE journal of quantum electronics 45 (12), 1508-1516, 2009 | 29 | 2009 |
Coulomb effects in type‐II Ga (As) Sb quantum dots K Gradkowski, TJ Ochalski, DP Williams, SB Healy, J Tatebayashi, ... physica status solidi (b) 246 (4), 752-755, 2009 | 26 | 2009 |
Dynamics of targeted Ransomware negotiation P Ryan, J Fokker, SB Healy, A Amann IEEE Access, 04137, 2022 | 19 | 2022 |
An analysis of 1.55 μm InAs∕ InP quantum dash lasers SC Heck, SB Healy, S Osborne, EP O’Reilly, F Lelarge, F Poingt, ... Applied Physics Letters 92 (25), 2008 | 14 | 2008 |
Intervalence band solitary waves in semiconductor quantum wells F Biancalana, SB Healy, R Fehse, EP O’Reilly Physical Review A—Atomic, Molecular, and Optical Physics 73 (6), 063826, 2006 | 13 | 2006 |
Influence of cluster states on band dispersion in bulk and quantum well (ultra-) dilute nitride semiconductors SB Healy, A Lindsay, EP O'Reilly IEE Proceedings-Optoelectronics 151 (5), 397-401, 2004 | 13 | 2004 |
Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates SB Healy, RJ Young, LO Mereni, V Dimastrodonato, E Pelucchi, ... Physica E: Low-dimensional Systems and Nanostructures 42 (10), 2761-2764, 2010 | 11 | 2010 |
High speed 850nm VCSELs for> 40Gb/s transmission JS Gustavsson, A Larsson, Å Haglund, J Bengtsson, P Westbergh, ... Optical Fiber Communication Conference, OTh4H. 4, 2013 | 10 | 2013 |
Long wavelength transverse magnetic polarized absorption in 1.3 µm InAs/InGaAs dots-in-a-well type active regions MT Crowley, SC Heck, SB Healy, S Osborne, DP Williams, S Schulz, ... Semiconductor science and technology 28 (1), 015012, 2012 | 7 | 2012 |
Influence of N cluster states on band dispersion in GaInNAs quantum wells SB Healy, A Lindsay, EP O’Reilly Physica E: Low-dimensional Systems and Nanostructures 32 (1-2), 249-253, 2006 | 7 | 2006 |
Built‐in field control in nitride nanostructures operating in the UV MA Caro, S Schulz, SB Healy, EP O'Reilly physica status solidi c 9 (3‐4), 838-841, 2012 | 5 | 2012 |
Theory of piezoelectric fields in InGaAs site-controlled quantum dots SB Healy, EP O'Reilly Journal of Physics: Conference Series 245 (1), 012022, 2010 | 4 | 2010 |
Band alignment and carrier recombination in GaAsSb/GaAs quantum wells K Hild, SJ Sweeney, SR Jin, SB Healy, EP O’Reilly, SR Johnson, ... AIP Conference Proceedings 893 (1), 1431-1432, 2007 | 4 | 2007 |