| Electrical contacts to two-dimensional semiconductors A Allain, J Kang, K Banerjee, A Kis Nature materials 14 (12), 1195-1205, 2015 | 1741 | 2015 |
| 3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration K Banerjee, SJ Souri, P Kapur, KC Saraswat Proceedings of the IEEE 89 (5), 602-633, 2001 | 1322 | 2001 |
| MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors D Sarkar, W Liu, X Xie, AC Anselmo, S Mitragotri, K Banerjee ACS nano 8 (4), 3992-4003, 2014 | 1135 | 2014 |
| Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors W Liu, J Kang, D Sarkar, Y Khatami, D Jena, K Banerjee Nano letters 13 (5), 1983-1990, 2013 | 1111 | 2013 |
| A subthermionic tunnel field-effect transistor with an atomically thin channel D Sarkar, X Xie, W Liu, W Cao, J Kang, Y Gong, S Kraemer, PM Ajayan, ... Nature 526 (7571), 91-95, 2015 | 1031 | 2015 |
| Interconnect limits on gigascale integration (GSI) in the 21st century JA Davis, R Venkatesan, A Kaloyeros, M Beylansky, SJ Souri, K Banerjee, ... Proceedings of the IEEE 89 (3), 305-324, 2001 | 957 | 2001 |
| Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors J Kang, W Liu, D Sarkar, D Jena, K Banerjee Physical Review X 4 (3), 031005, 2014 | 954 | 2014 |
| Two-dimensional van der Waals materials P Ajayan, P Kim, K Banerjee Physics Today 69 (9), 38-44, 2016 | 557 | 2016 |
| Carbon nanomaterials for next-generation interconnects and passives: Physics, status, and prospects H Li, C Xu, N Srivastava, K Banerjee IEEE Transactions on electron devices 56 (9), 1799-1821, 2009 | 548 | 2009 |
| Modeling, analysis, and design of graphene nano-ribbon interconnects C Xu, H Li, K Banerjee IEEE transactions on electron devices 56 (8), 1567-1578, 2009 | 458 | 2009 |
| Circuit modeling and performance analysis of multi-walled carbon nanotube interconnects H Li, WY Yin, K Banerjee, JF Mao IEEE Transactions on electron devices 55 (6), 1328-1337, 2008 | 454 | 2008 |
| A power-optimal repeater insertion methodology for global interconnects in nanometer designs K Banerjee, A Mehrotra IEEE Transactions on Electron Devices 49 (11), 2001-2007, 2002 | 444 | 2002 |
| High-performance MoS2 transistors with low-resistance molybdenum contacts J Kang, W Liu, K Banerjee Applied Physics Letters 104 (9), 2014 | 435 | 2014 |
| Synthesis of high-quality monolayer and bilayer graphene on copper using chemical vapor deposition W Liu, H Li, C Xu, Y Khatami, K Banerjee Carbon 49 (13), 4122-4130, 2011 | 423 | 2011 |
| Steep subthreshold slope n-and p-type tunnel-FET devices for low-power and energy-efficient digital circuits Y Khatami, K Banerjee IEEE transactions on electron devices 56 (11), 2752-2761, 2009 | 412 | 2009 |
| Vertical Si-Nanowire-Type Tunneling FETs With Low Subthreshold Swing () at Room Temperature R Gandhi, Z Chen, N Singh, K Banerjee, S Lee IEEE Electron Device Letters 32 (4), 437-439, 2011 | 409 | 2011 |
| Functionalization of transition metal dichalcogenides with metallic nanoparticles: implications for doping and gas-sensing D Sarkar, X Xie, J Kang, H Zhang, W Liu, J Navarrete, M Moskovits, ... Nano letters 15 (5), 2852-2862, 2015 | 392 | 2015 |
| Performance analysis of carbon nanotube interconnects for VLSI applications N Srivastava, K Banerjee ICCAD-2005. IEEE/ACM International Conference on Computer-Aided Design, 2005 …, 2005 | 392 | 2005 |
| Multiple Si layer ICs: Motivation, performance analysis, and design implications SJ Souri, K Banerjee, A Mehrotra, KC Saraswat Proceedings of the 37th Annual Design Automation Conference, 213-220, 2000 | 383 | 2000 |
| 2D semiconductor FETs—Projections and design for sub-10 nm VLSI W Cao, J Kang, D Sarkar, W Liu, K Banerjee IEEE transactions on electron devices 62 (11), 3459-3469, 2015 | 338 | 2015 |
Jiahao KangPeking UniversityVerified email at pku.edu.cn
