| Few electron limit of n-type metal oxide semiconductor single electron transistors E Prati, M De Michielis, M Belli, S Cocco, M Fanciulli, D Kotekar-Patil, ... Nanotechnology 23 (21), 215204, 2012 | 88 | 2012 |
| Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs M De Michielis, D Esseni, F Driussi IEEE Transactions on Electron Devices 54 (1), 115-123, 2006 | 54 | 2006 |
| A semianalytical description of the hole band structure in inversion layers for the physically based modeling of pMOS transistors M De Michielis, D Esseni, YL Tsang, P Palestri, L Selmi, AG O'Neill, ... IEEE transactions on electron devices 54 (9), 2164-2173, 2007 | 48 | 2007 |
| Effective Hamiltonian for the hybrid double quantum dot qubit E Ferraro, M De Michielis, G Mazzeo, M Fanciulli, E Prati Quantum information processing 13 (5), 1155-1173, 2014 | 46 | 2014 |
| On the origin of the mobility reduction in n-and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks P Toniutti, P Palestri, D Esseni, F Driussi, M De Michielis, L Selmi Journal of Applied Physics 112 (3), 2012 | 42 | 2012 |
| Investigation of strain engineering in FinFETs comprising experimental analysis and numerical simulations F Conzatti, N Serra, D Esseni, M De Michielis, A Paussa, P Palestri, ... IEEE transactions on electron devices 58 (6), 1583-1593, 2011 | 39 | 2011 |
| Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling M De Michielis, E Ferraro, M Fanciulli, E Prati Journal of Physics A: Mathematical and Theoretical 48 (6), 065304, 2015 | 35 | 2015 |
| Coherent tunneling by adiabatic passage of an exchange-only spin qubit in a double quantum dot chain E Ferraro, M De Michielis, M Fanciulli, E Prati Physical Review B 91 (7), 075435, 2015 | 33 | 2015 |
| Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs N Serra, F Conzatti, D Esseni, M De Michielis, P Palestri, L Selmi, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 33 | 2009 |
| Silicon spin qubits from laboratory to industry M De Michielis, E Ferraro, E Prati, L Hutin, B Bertrand, E Charbon, ... Journal of Physics D: Applied Physics 56 (36), 363001, 2023 | 28 | 2023 |
| Maximum density of quantum information in a scalable CMOS implementation of the hybrid qubit architecture D Rotta, M De Michielis, E Ferraro, M Fanciulli, E Prati Quantum Information Processing 15 (6), 2253-2274, 2016 | 28 | 2016 |
| Valley blockade and multielectron spin-valley Kondo effect in silicon A Crippa, MLV Tagliaferri, D Rotta, M De Michielis, G Mazzeo, M Fanciulli, ... Physical Review B 92 (3), 035424, 2015 | 25 | 2015 |
| Geometrical effects on valley-orbital filling patterns in silicon quantum dots for robust qubit implementation M De Michielis, E Prati, M Fanciulli, G Fiori, G Iannaccone Applied Physics Express 5 (12), 124001, 2012 | 22 | 2012 |
| Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations E Ferraro, M De Michielis, M Fanciulli, E Prati Quantum Information Processing 14 (1), 47-65, 2015 | 19 | 2015 |
| Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach M De Michielis, D Esseni, P Palestri, L Selmi IEEE transactions on electron devices 56 (9), 2081-2091, 2009 | 17 | 2009 |
| Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering: (Review invited paper) D Esseni, F Conzatti, M De Michielis, N Serra, P Palestri, L Selmi Journal of computational electronics 8, 209-224, 2009 | 16 | 2009 |
| Modular printed circuit boards for broadband characterization of nanoelectronic quantum devices MLV Tagliaferri, A Crippa, S Cocco, M De Michielis, M Fanciulli, G Ferrari, ... IEEE Transactions on Instrumentation and Measurement 65 (8), 1827-1835, 2016 | 14 | 2016 |
| Drain current improvements in uniaxially strained p-MOSFETs: A multi-subband Monte Carlo study F Conzatti, M De Michielis, D Esseni, P Palestri Solid-state electronics 53 (7), 706-711, 2009 | 13 | 2009 |
| Universal set of quantum gates for the flip-flop qubit in the presence of 1/f noise E Ferraro, D Rei, M Paris, M De Michielis EPJ Quantum Technology 9 (1), 1-11, 2022 | 11 | 2022 |
| Trade-off between electron velocity and density of states in ballistic nano-MOSFETs M De Michielis, D Esseni, F Driussi Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005 | 11 | 2005 |