| Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed IV Measurement V Nagarajan, KM Chen, BY Chen, GW Huang, CW Chuang, CJ Lin, ... IEEE Transactions on Device and Materials Reliability 20 (2), 436-441, 2020 | 27 | 2020 |
| Hetero structure PNPN tunnel FET: Analysis of scaling effects on counter doping HB Joseph, SK Singh, RM Hariharan, PA Priya, NM Kumar, ... Applied Surface Science 449, 823-828, 2018 | 17 | 2018 |
| Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs PKK Sankalp Kumar Singh, Ankur Gupta, Ananjan Basu, Edward Yi Chang Nanoscale Research Letter 16 (159), 2021 | 15 | 2021 |
| Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination V Nagarajan, KM Chen, HY Lin, HH Hu, GW Huang, CJ Lin, BY Chen, ... IEEE Transactions on Nanotechnology 19, 405-409, 2020 | 14 | 2020 |
| Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance SK Singh, RK Kakkerla, HB Joseph, A Gupta, D Anandan, V Nagarajan, ... Materials Science in Semiconductor Processing 101, 247-252, 2019 | 12 | 2019 |
| Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio D Anandan, V Nagarajan, RK Kakkerla, HW Yu, HL Ko, SK Singh, CT Lee, ... Journal of Crystal Growth 522, 30-36, 2019 | 11 | 2019 |
| Simulation study of gated nanowire InAs/Si Hetero p channel TFET and effects of interface trap HB Joseph, SK Singh, RM Hariharan, Y Tarauni, DJ Thiruvadigal Materials Science in Semiconductor Processing 103, 104605, 2019 | 10 | 2019 |
| Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD D Anandan, RK Kakkerla, HW Yu, HL Ko, V Nagarajan, SK Singh, CT Lee, ... Journal of Crystal Growth 506, 45-54, 2019 | 10 | 2019 |
| Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT F Lumbantoruan, CH Wu, XX Zheng, SK Singh, CF Dee, BY Majlis, ... physica status solidi (a) 215 (11), 1700741, 2018 | 9 | 2018 |
| Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensing GS Mishra, N Mohankumar, SK Singh Current Applied Physics 49, 83-90, 2023 | 8 | 2023 |
| A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects V Nagarajan, KM Chen, HC Wang, SK Singh, D Anandan, YC Lin, ... Microelectronics Journal 87, 51-54, 2019 | 8 | 2019 |
| Growth and Crystal Structure Investigation of InAs/GaSb Heterostructure Nanowires on Si Substrate RK Kakkerla, CJ Hsiao, D Anandan, SK Singh, SP Chang, KP Pande, ... IEEE Transactions on Nanotechnology 17 (6), 1151-1158, 2018 | 8 | 2018 |
| Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD RK Kakkerla, D Anandan, CJ Hsiao, HW Yu, SK Singh, EY Chang Journal of Crystal Growth 490, 19-24, 2018 | 7 | 2018 |
| Small-Signal Analysis of Channel Resistance RL at Low Gate Bias Voltages in AlGaN/GaN HEMTs PK Kaushik, SK Singh, A Gupta, A Basu IEEE Transactions on Electron Devices 68 (12), 6033-6038, 2021 | 5 | 2021 |
| Impact of material properties and device architecture on the device performance for a gate all around nanowire tunneling FET SK Singh, A Gupta, HW Yu, V Nagarajan, D Anandan, RK Kakkerla, ... Materials Research Express 4 (11), 114002, 2017 | 4 | 2017 |
| An improved parasitic resistance extraction strategy alongside the effect of Cds at low gate bias voltages for AlGaN/GaN HEMTs PK Kaushik, SK Singh, A Gupta, A Basu Engineering Research Express 3 (1), 015009, 2021 | 2 | 2021 |
| Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition RK Kakkerla, D Anandan, SK Singh, HW Yu, CT Lee, CF Dee, BY Majlis, ... Applied Physics Express 12 (1), 015502, 2018 | 2 | 2018 |
| CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free Biosensing GS Mishra, N Mohankumar, SK Singh, M Vamsi, DS Reddy 2022 IEEE International Conference of Electron Devices Society Kolkata …, 2022 | 1 | 2022 |
| Impact of Fringing Field on Shell Radius and Spacer Dielectric on Device Performance of InAs-GaSb Core-Shell Nanowire nTFET HB Joseph, SK Singh, V Nagarajan, D Anandan, EY Chang, RK Kakkerla, ... ECS Journal of Solid State Science and Technology 10 (6), 061004, 2021 | 1 | 2021 |
| Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor SK Singh, PK Kaushik, RK Kakkerla, A Gupta, D Anandan, V Nagarajan, ... Engineering Research Express 2 (3), 035004, 2020 | 1 | 2020 |
Edward Yi changNational Chico Tung universityVerified email at mail.nctu.edu.tw
