| Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 10.1. 1-10.1. 4, 2013 | 137 | 2013 |
| Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell B Govoreanu, A Redolfi, L Zhang, C Adelmann, M Popovici, S Clima, ... 2013 IEEE International Electron Devices Meeting, 10.2. 1-10.2. 4, 2013 | 105 | 2013 |
| Analysis of complementary RRAM switching DJ Wouters, L Zhang, A Fantini, R Degraeve, L Goux, YY Chen, ... IEEE electron device letters 33 (8), 1186-1188, 2012 | 77 | 2012 |
| High-performance metal-insulator-metal tunnel diode selectors B Govoreanu, C Adelmann, A Redolfi, L Zhang, S Clima, M Jurczak IEEE electron device letters 35 (1), 63-65, 2013 | 59 | 2013 |
| High-performance a-IGZO thin film diode as selector for cross-point memory application A Chasin, L Zhang, A Bhoolokam, M Nag, S Steudel, B Govoreanu, ... IEEE Electron Device Letters 35 (6), 642-644, 2014 | 57 | 2014 |
| A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability B Govoreanu, D Crotti, S Subhechha, L Zhang, YY Chen, S Clima, ... 2015 Symposium on VLSI Technology (VLSI Technology), T132-T133, 2015 | 55 | 2015 |
| RRAMs based on anionic and cationic switching: a short overview S Clima, K Sankaran, YY Chen, A Fantini, U Celano, A Belmonte, L Zhang, ... physica status solidi (RRL)–Rapid Research Letters 8 (6), 501-511, 2014 | 53 | 2014 |
| Analysis of vertical cross-point resistive memory (VRRAM) for 3D RRAM design L Zhang, S Cosemans, DJ Wouters, B Govoreanu, G Groeseneken, ... 2013 5th IEEE International Memory Workshop, 155-158, 2013 | 53 | 2013 |
| One-selector one-resistor cross-point array with threshold switching selector L Zhang, S Cosemans, DJ Wouters, G Groeseneken, M Jurczak, ... IEEE Transactions on Electron Devices 62 (10), 3250-3257, 2015 | 51 | 2015 |
| Ultrathin metal/amorphous-silicon/metal diode for bipolar RRAM selector applications L Zhang, A Redolfi, C Adelmann, S Clima, IP Radu, YY Chen, DJ Wouters, ... IEEE Electron Device Letters 35 (2), 199-201, 2013 | 46 | 2013 |
| High-drive current (>1MA/cm2) and highly nonlinear (>103) TiN/amorphous-Silicon/TiN scalable bidirectional selector with excellent reliability and its variability … L Zhang, B Govoreanu, A Redolfi, D Crotti, H Hody, V Paraschiv, ... 2014 IEEE International Electron Devices Meeting, 6.8. 1-6.8. 4, 2014 | 44 | 2014 |
| Selector design considerations and requirements for 1 SIR RRAM crossbar array L Zhang, S Cosemans, DJ Wouters, G Groeseneken, M Jurczak, ... 2014 IEEE 6th International Memory Workshop (IMW), 1-4, 2014 | 44 | 2014 |
| Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants YY Chen, R Roelofs, A Redolfi, R Degraeve, D Crotti, A Fantini, S Clima, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 42 | 2014 |
| Direct Evidence of the Overshoot Suppression in Ta2O5-Based Resistive Switching Memory With an Integrated Access Resistor YS Fan, L Zhang, D Crotti, T Witters, M Jurczak, B Govoreanu IEEE Electron Device Letters 36 (10), 1027-1029, 2015 | 31 | 2015 |
| On the optimal ON/OFF resistance ratio for resistive switching element in one-selector one-resistor crosspoint arrays L Zhang, S Cosemans, DJ Wouters, G Groeseneken, M Jurczak, ... IEEE Electron Device Letters 36 (6), 570-572, 2015 | 31 | 2015 |
| Cell variability impact on the one-selector one-resistor cross-point array performance L Zhang, S Cosemans, DJ Wouters, G Groeseneken, M Jurczak, ... IEEE Transactions on Electron Devices 62 (11), 3490-3497, 2015 | 23 | 2015 |
| Selectors for high density crosspoint memory arrays: Design considerations, device implementations and some challenges ahead B Govoreanu, L Zhang, M Jurczak 2015 International Conference on IC Design & Technology (ICICDT), 1-4, 2015 | 23 | 2015 |
| Performance and reliability of Ultra-Thin HfO2-based RRAM (UTO-RRAM) B Govoreanu, A Ajaykumar, H Lipowicz, YY Chen, JC Liu, R Degraeve, ... 2013 5th IEEE International Memory Workshop, 48-51, 2013 | 20 | 2013 |
| A compact NBTI model for accurate analog integrated circuit reliability simulation E Maricau, L Zhang, J Franco, P Roussel, G Groeseneken, G Gielen 2011 Proceedings of the European Solid-State Device Research Conference …, 2011 | 19 | 2011 |
| Study of the selector element for resistive memory L Zhang Ku Leuven Arenberg Doctoral School-Faculty of Engineering of Science, 232, 2015 | 18 | 2015 |
Chen Yang Yin 陈杨胤SanDiskVerified email at sandisk.com