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Jinseong Heo
Jinseong Heo
Samsung Advanced Institute of Technology
Verified email at samsung.com
Title
Cited by
Cited by
Year
Graphene barristor, a triode device with a gate-controlled Schottky barrier
H Yang, J Heo, S Park, HJ Song, DH Seo, KE Byun, P Kim, IK Yoo, ...
Science 336 (6085), 1140-1143, 2012
11342012
Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
QA Vu, YS Shin, YR Kim, VL Nguyen, WT Kang, H Kim, DH Luong, IM Lee, ...
Nature communications 7 (1), 12725, 2016
3182016
Tuning carrier tunneling in van der Waals heterostructures for ultrahigh detectivity
QA Vu, JH Lee, VL Nguyen, YS Shin, SC Lim, K Lee, J Heo, S Park, K Kim, ...
Nano letters 17 (1), 453-459, 2017
2192017
Robust bi-stable memory operation in single-layer graphene ferroelectric memory
EB Song, B Lian, S Min Kim, S Lee, TK Chung, M Wang, C Zeng, G Xu, ...
Applied Physics Letters 99 (4), 2011
1892011
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors
SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ...
Nature 604 (7904), 65-71, 2022
1882022
Graphene for true ohmic contact at metal–semiconductor junctions
KE Byun, HJ Chung, J Lee, H Yang, HJ Song, J Heo, DH Seo, S Park, ...
Nano letters 13 (9), 4001-4005, 2013
1232013
Nonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition
J Heo, HJ Chung, SH Lee, H Yang, DH Seo, JK Shin, UI Chung, S Seo, ...
Physical Review B—Condensed Matter and Materials Physics 84 (3), 035421, 2011
1072011
Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics
JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ...
Advanced Materials 35 (43), 2204904, 2023
1032023
Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment
S Kang, WS Jang, AN Morozovska, O Kwon, Y Jin, YH Kim, H Bae, ...
Science 376 (6594), 731-738, 2022
1012022
Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics
J Heo, KE Byun, J Lee, HJ Chung, S Jeon, S Park, S Hwang
Nano letters 13 (12), 5967-5971, 2013
882013
Band gap opening by two-dimensional manifestation of Peierls instability in graphene
SH Lee, HJ Chung, J Heo, H Yang, J Shin, UI Chung, S Seo
Acs Nano 5 (4), 2964-2969, 2011
872011
Passivation of metal surface states: microscopic origin for uniform monolayer graphene by low temperature chemical vapor deposition
I Jeon, H Yang, SH Lee, J Heo, DH Seo, J Shin, UI Chung, ZG Kim, ...
Acs Nano 5 (3), 1915-1920, 2011
812011
Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors
SJ Jeong, Y Gu, J Heo, J Yang, CS Lee, MH Lee, Y Lee, H Kim, S Park, ...
Scientific Reports 6 (1), 20907, 2016
752016
Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier
I Lee, WT Kang, YS Shin, YR Kim, UY Won, K Kim, DL Duong, K Lee, ...
ACS nano 13 (7), 8392-8400, 2019
682019
Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls
DH Choe, S Kim, T Moon, S Jo, H Bae, SG Nam, YS Lee, J Heo
Materials Today 50, 8-15, 2021
672021
Mobility engineering in vertical field effect transistors based on van der Waals heterostructures
YS Shin, K Lee, YR Kim, H Lee, IM Lee, WT Kang, BH Lee, K Kim, J Heo, ...
Advanced Materials 30 (9), 1704435, 2018
652018
Spin valve device including graphene, method of manufacturing the same, and magnetic device including the spin valve device
J Heo, SA Seo, Y Woo, H Chung
US Patent App. 12/805,909, 2011
572011
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ...
APL Materials 11 (8), 2023
522023
Local electronic structure of single-walled carbon nanotubes from electrostatic force microscopy
J Heo, M Bockrath
Nano letters 5 (5), 853-857, 2005
492005
Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask
CG Kang, JW Kang, SK Lee, SY Lee, CH Cho, HJ Hwang, YG Lee, J Heo, ...
Nanotechnology 22 (29), 295201, 2011
472011
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