Tunneling spin injection into single layer graphene W Han, K Pi, KM McCreary, Y Li, JJI Wong, AG Swartz, RK Kawakami Physical review letters 105 (16), 167202, 2010 | 575 | 2010 |
Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts JR Chen, PM Odenthal, AG Swartz, GC Floyd, H Wen, KY Luo, ... Nano letters 13 (7), 3106-3110, 2013 | 449 | 2013 |
Magnetic moment formation in graphene detected by scattering of pure spin currents KM McCreary, AG Swartz, W Han, J Fabian, RK Kawakami Physical review letters 109 (18), 186604, 2012 | 325 | 2012 |
Manipulation of spin transport in graphene by surface chemical doping K Pi, W Han, KM McCreary, AG Swartz, Y Li, RK Kawakami Physical review letters 104 (18), 187201, 2010 | 204 | 2010 |
Integration of the ferromagnetic insulator EuO onto graphene AG Swartz, PM Odenthal, Y Hao, RS Ruoff, RK Kawakami ACS nano 6 (11), 10063-10069, 2012 | 188 | 2012 |
Effect of cluster formation on graphene mobility KM McCreary, K Pi, AG Swartz, W Han, W Bao, CN Lau, F Guinea, ... Physical Review B—Condensed Matter and Materials Physics 81 (11), 115453, 2010 | 145 | 2010 |
Polaronic behavior in a weak-coupling superconductor AG Swartz, H Inoue, TA Merz, Y Hikita, S Raghu, TP Devereaux, ... Proceedings of the National Academy of Sciences 115 (7), 1475-1480, 2018 | 93 | 2018 |
Spin relaxation in single-layer graphene with tunable mobility W Han, JR Chen, D Wang, KM McCreary, H Wen, AG Swartz, J Shi, ... Nano Letters 12 (7), 3443-3447, 2012 | 86 | 2012 |
Defect control of conventional and anomalous electron transport at complex oxide interfaces F Gunkel, C Bell, H Inoue, B Kim, AG Swartz, TA Merz, Y Hikita, ... Physical Review X 6 (3), 031035, 2016 | 85 | 2016 |
Carrier density and disorder tuned superconductor-metal transition in a two-dimensional electron system Z Chen, AG Swartz, H Yoon, H Inoue, TA Merz, D Lu, Y Xie, H Yuan, ... Nature communications 9 (1), 4008, 2018 | 82 | 2018 |
Epitaxial EuO thin films on GaAs AG Swartz, J Ciraldo, JJI Wong, Y Li, W Han, T Lin, S Mack, J Shi, ... Applied Physics Letters 97 (11), 2010 | 70 | 2010 |
Origin of the magnetoresistance in oxide tunnel junctions determined through electric polarization control of the interface H Inoue, AG Swartz, NJ Harmon, T Tachikawa, Y Hikita, ME Flatté, ... Physical Review X 5 (4), 041023, 2015 | 59 | 2015 |
Magnetic anisotropy, damping, and interfacial spin transport in Pt/LSMO bilayers HK Lee, I Barsukov, AG Swartz, B Kim, L Yang, HY Hwang, IN Krivorotov AIP Advances 6 (5), 2016 | 52 | 2016 |
Large-Area Crystalline BaSnO3 Membranes with High Electron Mobilities P Singh, A Swartz, D Lu, SS Hong, K Lee, AF Marshall, K Nishio, Y Hikita, ... ACS Applied Electronic Materials 1 (7), 1269-1274, 2019 | 51 | 2019 |
Spin-dependent transport across Co/LaAlO3/SrTiO3 heterojunctions AG Swartz, S Harashima, Y Xie, D Lu, B Kim, C Bell, Y Hikita, HY Hwang Applied Physics Letters 105 (3), 2014 | 51 | 2014 |
Ferromagnetic resonance of perpendicularly magnetized Tm3Fe5O12/Pt heterostructures S Crossley, A Quindeau, AG Swartz, ER Rosenberg, L Beran, CO Avci, ... Applied Physics Letters 115 (17), 2019 | 38 | 2019 |
Effect of in situ deposition of Mg adatoms on spin relaxation in graphene AG Swartz, JR Chen, KM McCreary, PM Odenthal, W Han, RK Kawakami Physical Review B—Condensed Matter and Materials Physics 87 (7), 075455, 2013 | 32 | 2013 |
Growth of single-crystalline, atomically smooth MgO films on Ge (0 0 1) by molecular beam epitaxy W Han, Y Zhou, Y Wang, Y Li, JJI Wong, K Pi, AG Swartz, KM McCreary, ... Journal of crystal growth 312 (1), 44-47, 2009 | 32 | 2009 |
Electric field control of the Verwey transition and induced magnetoelectric effect in magnetite JJI Wong, AG Swartz, R Zheng, W Han, RK Kawakami Physical Review B—Condensed Matter and Materials Physics 86 (6), 060409, 2012 | 30 | 2012 |
Anisotropic Dependence of Superconductivity on Uniaxial Pressure in OM Dix, AG Swartz, RJ Zieve, J Cooley, TR Sayles, MB Maple Physical review letters 102 (19), 197001, 2009 | 30 | 2009 |