| Cut-and-paste” manufacture of multiparametric epidermal sensor systems S Yang, YC Chen, L Nicolini, P Pasupathy, J Sacks, B Su, R Yang, ... Adv. Mater 27 (41), 6423-6430, 2015 | 327 | 2015 |
| Analog synaptic behavior of a silicon nitride memristor S Kim, H Kim, S Hwang, MH Kim, YF Chang, BG Park ACS applied materials & interfaces 9 (46), 40420-40427, 2017 | 244 | 2017 |
| Physical and chemical mechanisms in oxide-based resistance random access memory KC Chang, TC Chang, TM Tsai, R Zhang, YC Hung, YE Syu, YF Chang, ... Nanoscale research letters 10, 1-27, 2015 | 157 | 2015 |
| Complementary metal‐oxide semiconductor and memristive hardware for neuromorphic computing M Rahimi Azghadi, YC Chen, JK Eshraghian, J Chen, CY Lin, ... Advanced Intelligent Systems 2 (5), 1900189, 2020 | 137 | 2020 |
| Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography L Ji, YF Chang, B Fowler, YC Chen, TM Tsai, KC Chang, MC Chen, ... Nano letters 14 (2), 813-818, 2014 | 117 | 2014 |
| Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ... Nanoscale 11 (1), 237-245, 2019 | 114 | 2019 |
| Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee Journal of Applied Physics 116 (4), 2014 | 114 | 2014 |
| Scaling effect on silicon nitride memristor with highly doped Si substrate S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ... Small 14 (19), 1704062, 2018 | 101 | 2018 |
| Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory YF Chang, PY Chen, B Fowler, YT Chen, F Xue, Y Wang, F Zhou, JC Lee Journal of Applied Physics 112 (12), 2012 | 101 | 2012 |
| Demonstration of synaptic behaviors and resistive switching characterizations by proton exchange reactions in silicon oxide YF Chang, B Fowler, YC Chen, F Zhou, CH Pan, TC Chang, JC Lee Scientific reports 6 (1), 21268, 2016 | 100 | 2016 |
| Electroforming and resistive switching in silicon dioxide resistive memory devices BW Fowler, YF Chang, F Zhou, Y Wang, PY Chen, F Xue, YT Chen, ... Rsc Advances 5 (27), 21215-21236, 2015 | 84 | 2015 |
| A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems CC Hsieh, A Roy, YF Chang, D Shahrjerdi, SK Banerjee Applied Physics Letters 109 (22), 2016 | 79 | 2016 |
| Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee Journal of Applied Physics 116 (4), 2014 | 77 | 2014 |
| Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode CY Lin, PH Chen, TC Chang, KC Chang, SD Zhang, TM Tsai, CH Pan, ... Nanoscale 9 (25), 8586-8590, 2017 | 73 | 2017 |
| Non-volatile RRAM embedded into 22FFL FinFET technology O Golonzka, U Arslan, P Bai, M Bohr, O Baykan, Y Chang, A Chaudhari, ... 2019 Symposium on VLSI Technology, T230-T231, 2019 | 72 | 2019 |
| Charge quantity influence on resistance switching characteristic during forming process TJ Chu, TC Chang, TM Tsai, HH Wu, JH Chen, KC Chang, TF Young, ... IEEE Electron Device Letters 34 (4), 502-504, 2013 | 71 | 2013 |
| Study of polarity effect in SiOx-based resistive switching memory YF Chang, PY Chen, YT Chen, F Xue, Y Wang, F Zhou, B Fowler, JC Lee Applied Physics Letters 101 (5), 2012 | 69 | 2012 |
| Memory switching properties of e-beam evaporated SiOx on N++ Si substrate Y Wang, YT Chen, F Xue, F Zhou, YF Chang, B Fowler, JC Lee Applied Physics Letters 100 (8), 2012 | 66 | 2012 |
| A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures LW Feng, CY Chang, YF Chang, WR Chen, SY Wang, PW Chiang, ... Applied Physics Letters 96 (5), 2010 | 66 | 2010 |
| Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiN x/p-Si memory devices S Kim, YF Chang, BG Park RSC advances 7 (29), 17882-17888, 2017 | 57 | 2017 |
Fei XueIntelVerified email at utexas.edu