| Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons F Mazzamuto, V Hung Nguyen, Y Apertet, C Caër, C Chassat, ... Physical Review B—Condensed Matter and Materials Physics 83 (23), 235426, 2011 | 215 | 2011 |
| Resonant tunnelling diodes based on graphene/h-BN heterostructure VH Nguyen, F Mazzamuto, A Bournel, P Dollfus Journal of Physics D: Applied Physics 45 (32), 325104, 2012 | 89 | 2012 |
| Doping of semiconductor devices by Laser Thermal Annealing K Huet, F Mazzamuto, T Tabata, I Toque-Tresonne, Y Mori Materials Science in Semiconductor Processing 62, 92-102, 2017 | 58 | 2017 |
| Defect evolution and dopant activation in laser annealed Si and Ge F Cristiano, M Shayesteh, R Duffy, K Huet, F Mazzamuto, Y Qiu, M Quillec, ... Materials Science in Semiconductor Processing 42, 188-195, 2016 | 53 | 2016 |
| Extended defects formation in nanosecond laser-annealed ion implanted silicon Y Qiu, F Cristiano, K Huet, F Mazzamuto, G Fisicaro, A La Magna, ... Nano letters 14 (4), 1769-1775, 2014 | 52 | 2014 |
| Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect VH Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus Nanotechnology 23 (6), 065201, 2012 | 52 | 2012 |
| Thermoelectric performance of disordered and nanostructured graphene ribbons using Green’s function method F Mazzamuto, J Saint-Martin, VH Nguyen, C Chassat, P Dollfus Journal of Computational Electronics 11, 67-77, 2012 | 46 | 2012 |
| Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study F Mazzamuto, J Saint-Martin, A Valentin, C Chassat, P Dollfus Journal of Applied Physics 109 (6), 2011 | 44 | 2011 |
| Pulsed laser annealing for advanced technology nodes: Modeling and calibration K Huet, J Aubin, PE Raynal, B Curvers, A Verstraete, B Lespinasse, ... Applied Surface Science 505, 144470, 2020 | 42 | 2020 |
| Giant effect of negative differential conductance in graphene nanoribbon pn hetero-junctions V Hung Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus Applied Physics Letters 99 (4), 2011 | 38 | 2011 |
| Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance V Hung Nguyen, J Saint-Martin, D Querlioz, F Mazzamuto, A Bournel, ... Journal of computational electronics 12, 85-93, 2013 | 37 | 2013 |
| Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal T Tabata, J Aubin, K Huet, F Mazzamuto Journal of Applied Physics 125 (21), 2019 | 24 | 2019 |
| 3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters A Vandooren, Z Wu, N Parihar, J Franco, B Parvais, P Matagne, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 22 | 2020 |
| Solid phase recrystallization induced by multi-pulse nanosecond laser annealing PA Alba, J Aubin, S Perrot, F Mazzamuto, A Grenier, S Kerdilès Applied Surface Science Advances 3, 100053, 2021 | 21 | 2021 |
| Laser thermal annealing: A low thermal budget solution for advanced structures and new materials K Huet, I Toqué-Tresonne, F Mazzamuto, T Emeraud, H Besaucèle 2014 International Workshop on Junction Technology (IWJT), 1-6, 2014 | 21 | 2014 |
| Nanosecond laser annealing for phosphorous activation in ultra-thin implanted silicon-on-insulator substrates PA Alba, S Kerdiles, B Mathieu, R Kachtouli, F Mazzamuto, ... 2016 21st International Conference on Ion Implantation Technology (IIT), 1-4, 2016 | 20 | 2016 |
| Low thermal budget ohmic contact formation by laser anneal F Mazzamuto, S Halty, H Tanimura, Y Mori Materials Science Forum 858, 565-568, 2016 | 19 | 2016 |
| Ns laser annealing for junction activation preserving inter-tier interconnections stability within a 3D sequential integration C Fenouillet-Beranger, P Acosta-Alba, B Mathieu, S Kerdilès, MP Samson, ... 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2016 | 16 | 2016 |
| Silicon Carbide recrystallization mechanism by non-equilibrium melting laser anneal F Mazzamuto, S Halty, Y Mori Materials Science Forum 858, 540-543, 2016 | 15 | 2016 |
| Dopant activation and crystal recovery in arsenic-implanted ultra-thin silicon-on-insulator structures using 308nm nanosecond laser annealing S Kerdilès, PA Alba, B Mathieu, M Veillerot, R Kachtouli, P Besson, ... 2016 16th international workshop on junction technology (IWJT), 72-75, 2016 | 13 | 2016 |
