The RFET—A reconfigurable nanowire transistor and its application to novel electronic circuits and systems T Mikolajick, A Heinzig, J Trommer, T Baldauf, WM Weber Semiconductor Science and Technology 32 (4), 043001, 2017 | 137 | 2017 |
Functionality-enhanced logic gate design enabled by symmetrical reconfigurable silicon nanowire transistors J Trommer, A Heinzig, T Baldauf, S Slesazeck, T Mikolajick, WM Weber IEEE Transactions on Nanotechnology 14 (4), 689-698, 2015 | 120 | 2015 |
Enabling energy efficiency and polarity control in germanium nanowire transistors by individually gated nanojunctions J Trommer, A Heinzig, U Muhle, M Loffler, A Winzer, PM Jordan, J Beister, ... ACS nano 11 (2), 1704-1711, 2017 | 109 | 2017 |
Reconfigurable nanowire transistors with multiple independent gates for efficient and programmable combinational circuits J Trommer, A Heinzig, T Baldauf, T Mikolajick, WM Weber, M Raitza, ... 2016 Design, Automation & Test in Europe Conference & Exhibition (DATE), 169-174, 2016 | 63 | 2016 |
Top-down technology for reconfigurable nanowire FETs with symmetric on-currents M Simon, A Heinzig, J Trommer, T Baldauf, T Mikolajick, WM Weber IEEE Transactions on Nanotechnology 16 (5), 812-819, 2017 | 46 | 2017 |
Integrated circuits having protruding source and drain regions and methods for forming integrated circuits T Baldauf, T Herrmann, S Flachowsky, R Illgen US Patent 8,912,606, 2014 | 40 | 2014 |
Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistors T Baldauf, A Heinzig, J Trommer, T Mikolajick, WM Weber Solid-State Electronics 128, 148-154, 2017 | 37 | 2017 |
A wired-AND transistor: Polarity controllable FET with multiple inputs M Simon, J Trommer, B Liang, D Fischer, T Baldauf, MB Khan, A Heinzig, ... 2018 76th Device Research Conference (DRC), 1-2, 2018 | 35 | 2018 |
A physical synthesis flow for early technology evaluation of silicon nanowire based reconfigurable FETs S Rai, A Rupani, D Walter, M Raitza, A Heinzig, T Baldauf, J Trommer, ... 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), 605-608, 2018 | 34 | 2018 |
Stress-dependent performance optimization of reconfigurable silicon nanowire transistors T Baldauf, A Heinzig, J Trommer, T Mikolajick, WM Weber IEEE electron device letters 36 (10), 991-993, 2015 | 26 | 2015 |
Threshold voltage adjustment in a Fin transistor by corner implantation T Baldauf, A Wei, T Herrmann, S Flachowsky, R Illgen US Patent 8,580,643, 2013 | 20 | 2013 |
Bringing reconfigurable nanowire FETs to a logic circuits compatible process platform M Simon, A Heinzig, J Trommer, T Baldauf, T Mikolajick, WM Weber 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), 1-3, 2016 | 19 | 2016 |
Stress Memorization Technique for n-MOSFETs: Where is the Stress Memorized? S Flachowsky, R Illgen, T Herrmann, T Baldauf, A Wei, J Höntschel, W Klix, ... Ultimate integration on Silicon-2010, 149-152, 2010 | 15 | 2010 |
Germanium nanowire reconfigurable transistor model for predictive technology evaluation JN Quijada, T Baldauf, S Rai, A Heinzig, A Kumar, WM Weber, ... IEEE transactions on nanotechnology 21, 728-736, 2022 | 12 | 2022 |
Vertically integrated reconfigurable nanowire arrays T Baldauf, A Heinzig, T Mikolajick, WM Weber IEEE Electron Device Letters 39 (8), 1242-1245, 2018 | 12 | 2018 |
Scaling aspects of nanowire schottky junction based reconfigurable field effect transistors T Baldauf, A Heinzig, T Mikolajick, WM Weber 2019 Joint International EUROSOI Workshop and International Conference on …, 2019 | 11 | 2019 |
Strain-engineering for improved tunneling in reconfigurable silicon nanowire transistors T Baldauf, A Heinzig, T Mikolajick, WM Weber, J Trommer 2016 Joint International EUROSOI Workshop and International Conference on …, 2016 | 10 | 2016 |
Reconfigurable nanowire field effect transistor, a nanowire array and an integrated circuit thereof T Baldauf, A Heinzig, WM Weber US Patent 10,347,760, 2019 | 9 | 2019 |
Method of forming a semiconductor structure including a vertical nanowire T Baldauf, S Flachowsky, T Hermann, R Illgen US Patent 8,835,255, 2014 | 8 | 2014 |
Simulation and optimization of tri-gates in a 22 nm hybrid tri-gate/planar process T Baldauf, A Wei, R Illgen, S Flachowsky, T Herrmann, T Feudel, ... Ulis 2011 Ultimate Integration on Silicon, 1-4, 2011 | 7 | 2011 |