| SiC sensors: a review NG Wright, AB Horsfall Journal of Physics D: Applied Physics 40 (20), 6345, 2007 | 318 | 2007 |
| Prospects for SiC electronics and sensors NG Wright, AB Horsfall, K Vassilevski Materials today 11 (1-2), 16-21, 2008 | 256 | 2008 |
| Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide IP Nikitina, KV Vassilevski, NG Wright, AB Horsfall, AG O’Neill, ... Journal of Applied Physics 97 (8), 2005 | 204 | 2005 |
| Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing KV Vassilevski, NG Wright, IP Nikitina, AB Horsfall, AG O'neill, MJ Uren, ... Semiconductor Science and Technology 20 (3), 271, 2005 | 98 | 2005 |
| Calculated electron affinity and stability of halogen-terminated diamond AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall, R Jones, H Pinto, ... Physical Review B—Condensed Matter and Materials Physics 84 (24), 245305, 2011 | 91 | 2011 |
| Leakage current and charge trapping behavior in TiO2∕ SiO2 high-κ gate dielectric stack on 4H‐SiC substrate R Mahapatra, AK Chakraborty, N Poolamai, A Horsfall, S Chattopadhyay, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 76 | 2007 |
| The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors B Miao, R Mahapatra, N Wright, A Horsfall Journal of Applied Physics 104 (5), 2008 | 62 | 2008 |
| Energy-band alignment of HfO2∕ SiO2∕ SiC gate dielectric stack R Mahapatra, AK Chakraborty, AB Horsfall, NG Wright, G Beamson, ... Applied physics letters 92 (4), 2008 | 52 | 2008 |
| Recent progress and current issues in SiC semiconductor devices for power applications CM Johnson, NG Wright, MJ Uren, KP Hilton, M Rahimo, DA Hinchley, ... IEE Proceedings-Circuits, Devices and Systems 148 (2), 101-108, 2001 | 50 | 2001 |
| Networks of DNA-templated palladium nanowires: structural and electrical characterisation and their use as hydrogen gas sensors MN Al-Hinai, R Hassanien, NG Wright, AB Horsfall, A Houlton, ... Faraday Discussions 164, 71-91, 2013 | 49 | 2013 |
| Electronic and structural properties of diamond (001) surfaces terminated by selected transition metals AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall, MJ Rayson Physical Review B—Condensed Matter and Materials Physics 86 (15), 155301, 2012 | 48 | 2012 |
| High temperature measurements of metal contacts on epitaxial graphene VK Nagareddy, IP Nikitina, DK Gaskill, JL Tedesco, RL Myers-Ward, ... Applied Physics Letters 99 (7), 2011 | 45 | 2011 |
| High voltage silicon carbide Schottky diodes with single zone junction termination extension K Vassilevski, IP Nikitina, AB Horsfall, NG Wright, AG O'Neill, KP Hilton, ... Materials Science Forum 556, 873-876, 2007 | 43 | 2007 |
| Design and performance evaluation of SiC based DC-DC converters for PV applications O Mostaghimi, N Wright, A Horsfall 2012 IEEE Energy Conversion Congress and Exposition (ECCE), 3956-3963, 2012 | 41 | 2012 |
| Device processing and characterisation of high temperature silicon carbide Schottky diodes KV Vassilevski, IP Nikitina, NG Wright, AB Horsfall, AG O’Neill, ... Microelectronic engineering 83 (1), 150-154, 2006 | 41 | 2006 |
| SiC X-ray detectors for harsh environments JE Lees, AM Barnett, DJ Bassford, RC Stevens, AB Horsfall Journal of Instrumentation 6 (01), C01032, 2011 | 40 | 2011 |
| Direct measurement of residual stress in sub-micron interconnects AB Horsfall, JMM Dos Santos, SM Soare, NG Wright, AG O'neill, SJ Bull, ... semiconductor science and technology 18 (11), 992, 2003 | 40 | 2003 |
| Nanoindentation assessment of aluminium metallisation; the effect of creep and pile-up S Soare, SJ Bull, AG O'Neil, N Wright, A Horsfall, JMM dos Santos Surface and Coatings Technology 177, 497-503, 2004 | 39 | 2004 |
| Semi-transparent SiC Schottky diodes for X-ray spectroscopy JE Lees, DJ Bassford, GW Fraser, AB Horsfall, KV Vassilevski, NG Wright, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007 | 38 | 2007 |
| Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon E Escobedo-Cousin, K Vassilevski, T Hopf, N Wright, A O'Neill, A Horsfall, ... Journal of Applied Physics 113 (11), 2013 | 36 | 2013 |
