| Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions Y Liu, J Guo, E Zhu, L Liao, SJ Lee, M Ding, I Shakir, V Gambin, Y Huang, ... Nature 557 (7707), 696-700, 2018 | 1724 | 2018 |
| Growth of semiconducting graphene on palladium SY Kwon, CV Ciobanu, V Petrova, VB Shenoy, J Bareno, V Gambin, ... Nano letters 9 (12), 3985-3990, 2009 | 466 | 2009 |
| Nearest-neighbor configuration in (GaIn)(NAs) probed by X-ray absorption spectroscopy V Lordi, V Gambin, S Friedrich, T Funk, T Takizawa, K Uno, JS Harris Physical review letters 90 (14), 145505, 2003 | 158 | 2003 |
| The role of Sb in the MBE growth of (GaIn)(NAsSb) K Volz, V Gambin, W Ha, MA Wistey, H Yuen, S Bank, JS Harris Journal of Crystal Growth 251 (1-4), 360-366, 2003 | 109 | 2003 |
| Nitrogen-related electron traps in Ga(As,N) layers P Krispin, V Gambin, JS Harris, KH Ploog Journal of Applied Physics 93 (10), 6095-6099, 2003 | 104 | 2003 |
| GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy V Gambin, W Ha, M Wistey, H Yuen, SR Bank, SM Kim, JS Harris IEEE Journal of selected topics in quantum electronics 8 (4), 795-800, 2002 | 101 | 2002 |
| Long-wavelength GaInNAs (Sb) lasers on GaAs W Ha, V Gambin, S Bank, M Wistey, H Yuen, S Kim, JS Harris IEEE journal of quantum electronics 38 (9), 1260-1267, 2002 | 95 | 2002 |
| Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm W Ha, V Gambin, M Wistey, S Bank, S Kim, JS Harris IEEE Photonics Technology Letters 14 (5), 591-593, 2002 | 90 | 2002 |
| Low Contact Barrier in 2H/1T′ MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition X Zhang, Z Jin, L Wang, JA Hachtel, E Villarreal, Z Wang, T Ha, ... ACS applied materials & interfaces 11 (13), 12777-12785, 2019 | 88 | 2019 |
| A 1–25 GHz GaN HEMT MMIC low-noise amplifier M Chen, W Sutton, I Smorchkova, B Heying, WB Luo, V Gambin, F Oshita, ... IEEE Microwave and Wireless Components Letters 20 (10), 563-565, 2010 | 78 | 2010 |
| Integrated nanomaterials for extreme thermal management: A perspective for aerospace applications MT Barako, V Gambin, J Tice Nanotechnology 29 (15), 154003, 2018 | 61 | 2018 |
| Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers W Ha, V Gambin, M Wistey, S Bank, H Yuen, S Kim, JS Harris, Jr Electronics Letters 38 (6), 277-278, 2002 | 56 | 2002 |
| Vertical charge transport and negative transconductance in multilayer molybdenum disulfides Y Liu, J Guo, Q He, H Wu, HC Cheng, M Ding, I Shakir, V Gambin, ... Nano Letters 17 (9), 5495-5501, 2017 | 54 | 2017 |
| Thermal conduction inhomogeneity of nanocrystalline diamond films by dual-side thermoreflectance E Bozorg-Grayeli, A Sood, M Asheghi, V Gambin, R Sandhu, TI Feygelson, ... Applied Physics Letters 102 (11), 2013 | 51 | 2013 |
| Wafer-scale black arsenic–phosphorus thin-film synthesis validated with density functional perturbation theory predictions EP Young, J Park, T Bai, C Choi, RH DeBlock, M Lange, S Poust, J Tice, ... ACS Applied Nano Materials 1 (9), 4737-4745, 2018 | 47 | 2018 |
| Temperature and voltage dependent RF degradation study in AlGaN/GaN HEMTs R Coffie, Y Chen, IP Smorchkova, B Heying, V Gambin, W Sutton, ... 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 44 | 2007 |
| 1.5 μm GaInNAs (Sb) lasers grown on GaAs by MBE S Bank, W Ha, V Gambin, M Wistey, H Yuen, L Goddard, S Kim, ... Journal of crystal growth 251 (1-4), 367-371, 2003 | 40 | 2003 |
| Ambipolar barristors for reconfigurable logic circuits Y Liu, G Zhang, H Zhou, Z Li, R Cheng, Y Xu, V Gambin, Y Huang, ... Nano Letters 17 (3), 1448-1454, 2017 | 36 | 2017 |
| AIN buffer N-polar GaN HEMT profile V Gambin, X Gu, B Heying US Patent 8,710,511, 2014 | 33 | 2014 |
| In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy B Heying, IP Smorchkova, R Coffie, V Gambin, YC Chen, W Sutton, T Lam, ... Electronics Letters 43 (14), 779-780, 2007 | 32 | 2007 |
