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Won-Joo (Ryan) Yun
Won-Joo (Ryan) Yun
Corporate VP, Samsung Electronics
Verified email at samsung.com
Title
Cited by
Cited by
Year
18.2 A 1.2 V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution
K Sohn, WJ Yun, R Oh, CS Oh, SY Seo, MS Park, DH Shin, WC Jung, ...
2016 IEEE International Solid-State Circuits Conference (ISSCC), 316-317, 2016
1052016
A 3.57 Gb/s/pin Low Jitter All-Digital DLL With Dual DCC Circuit for GDDR3 DRAM in 54-nm CMOS Technology
WJ Yun, HW Lee, D Shin, S Kim
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on 19 (9 …, 2011
442011
A 0.1-to-1.5 GHz 4.2 mW all-digital DLL with dual duty-cycle correction circuit and update gear circuit for DRAM in 66nm CMOS technology
WJ Yun, HW Lee, D Shin, SD Kang, JY Yang, HO Lee, DU Lee, S Sim, ...
2008 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2008
422008
DLL circuit and method of controlling the same
DS Shin, H Lee, WJ Yun
US Patent 7,598,783, 2009
382009
DLL circuit having duty cycle correction and method of controlling the same
WJ Yun, HW Lee
US Patent 7,821,310, 2010
342010
A 7Gb/s/link non-contact memory module for multi-drop bus system using energy-equipartitioned coupled transmission line
WJ Yun, S Nakano, W Mizuhara, A Kosuge, N Miura, H Ishikuro, T Kuroda
2012 IEEE International Solid-State Circuits Conference, 52-54, 2012
272012
Electronic device having a delay locked loop, and memory device having the same
WJ Yun, S Yong
US Patent 9,654,093, 2017
262017
Delay-locked loop apparatus and delay-locked method
WJ Yun, HW Lee
US Patent 7,560,963, 2009
242009
Delay locked loop apparatus
HWL Won-Joo Yun
US Patent 8,120,397, 2012
20*2012
Delay locked loop apparatus
WJ Yun, HW Lee
US Patent 7,830,186, 2010
202010
Data output strobe signal generating circuit and semiconductor memory apparatus having the same
WJ Yun, H Lee
US Patent 7,633,324, 2009
202009
Semiconductor memory apparatus
HW Lee, WJ Yun
US Patent 7,800,422, 2010
182010
Semiconductor memory apparatus with a delay locked loop circuit
WJ Yun, H Lee
US Patent 7,605,623, 2009
172009
A 1.26 mW/Gbps 8 locking cycles versatile all-digital CDR with TDC combined DLL
Y Urano, WJ Yun, T Kuroda, H Ishikuro
2013 IEEE International Symposium on Circuits and Systems (ISCAS), 1576-1579, 2013
162013
Power-down mode control apparatus and DLL circuit having the same
DSS H.-W. Lee, Won-Joo Yun
US Patent 7,868,673, 2011
16*2011
17.7 A digital DLL with hybrid DCC using 2-step duty error extraction and 180° phase aligner for 2.67 Gb/S/pin 16Gb 4-H stack DDR4 SDRAM with TSVs
WJ Yun, I Song, H Jeoung, H Choi, SH Lee, JB Kim, CW Kim, JH Choi, ...
2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of …, 2015
142015
DLL circuit and method of controlling the same
WJ Yun, H Lee
US Patent 7,755,405, 2010
142010
Multi-slew-rate output driver and optimized impedance-calibration circuit for 66nm 3.0 Gb/s/pin DRAM interface
DU Lee, SD Kang, NK Park, HW Lee, YK Choi, JW Lee, SW Kwack, ...
2008 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2008
142008
A 0.17–1.4 GHz low-jitter all digital DLL with TDC-based DCC using pulse width detection scheme
D Shin, WJ Yun, HW Lee, YJ Choi, S Kim, C Kim
ESSCIRC 2008-34th European Solid-State Circuits Conference, 82-85, 2008
132008
Duty cycle error detection device and duty cycle correction device having the same
S Yong, WJ Yun
US Patent 9,501,041, 2016
122016
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