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Konstantin Kokh (Константин Кох)
Konstantin Kokh (Константин Кох)
V.S. Sobolev Institute of Geology and Mineralogy
Verified email at igm.nsc.ru
Title
Cited by
Cited by
Year
Subcycle observation of lightwave-driven Dirac currents in a topological surface band
J Reimann, S Schlauderer, CP Schmid, F Langer, S Baierl, KA Kokh, ...
Nature 562 (7727), 396-400, 2018
2332018
Plasma-wave terahertz detection mediated by topological insulators surface states
L Viti, D Coquillat, A Politano, KA Kokh, ZS Aliev, MB Babanly, ...
Nano Letters 16 (1), 80-87, 2016
2172016
Tunable 3D/2D magnetism in the (MnBi2Te4)(Bi2Te3)m topological insulators family
II Klimovskikh, MM Otrokov, D Estyunin, SV Eremeev, SO Filnov, ...
npj Quantum Materials 5 (1), 54, 2020
2032020
Tunable non-integer high-harmonic generation in a topological insulator
CP Schmid, L Weigl, P Grössing, V Junk, C Gorini, S Schlauderer, S Ito, ...
Nature 593 (7859), 385-390, 2021
1762021
Formation of Inert Bi2Se3(0001) Cleaved Surface
VV Atuchin, VA Golyashov, KA Kokh, IV Korolkov, AS Kozhukhov, ...
Crystal Growth & Design 11 (12), 5507-5514, 2011
1432011
Topological Surface States with Persistent High Spin Polarization across the Dirac Point <?format ?>in and
K Miyamoto, A Kimura, T Okuda, H Miyahara, K Kuroda, H Namatame, ...
Physical review letters 109 (16), 166802, 2012
1272012
Vibrations in binary and ternary topological insulators: First-principles calculations and Raman spectroscopy measurements
V Chis, IY Sklyadneva, KA Kokh, VA Volodin, OE Tereshchenko, ...
Physical Review B—Condensed Matter and Materials Physics 86 (17), 174304, 2012
1122012
Spin-texture inversion in the giant Rashba semiconductor BiTeI
H Maaß, H Bentmann, C Seibel, C Tusche, SV Eremeev, TRF Peixoto, ...
Nature communications 7 (1), 11621, 2016
1102016
Doped GaSe crystals for laser frequency conversion
J Guo, JJ Xie, DJ Li, GL Yang, F Chen, CR Wang, LM Zhang, YM Andreev, ...
Light: Science & Applications 4 (12), e362-e362, 2015
1052015
Application of a rotating heat field in Bridgman–Stockbarger crystal growth
KA Kokh, BG Nenashev, AE Kokh, GY Shvedenkov
Journal of Crystal Growth 275 (1-2), e2129-e2134, 2005
992005
Sample-dependent Dirac-point gap in and its response to applied surface charge: A combined photoemission and ab initio study
AM Shikin, DA Estyunin, NL Zaitsev, D Glazkova, II Klimovskikh, SO Filnov, ...
Physical Review B 104 (11), 115168, 2021
972021
Snapshots of Dirac fermions near the Dirac point in topological insulators
CW Luo, HJ Wang, SA Ku, HJ Chen, TT Yeh, JY Lin, KH Wu, JY Juang, ...
Nano letters 13 (12), 5797-5802, 2013
942013
Bulk and surface Rashba splitting in single termination BiTeCl
G Landolt, SV Eremeev, OE Tereshchenko, S Muff, B Slomski, KA Kokh, ...
New Journal of Physics 15 (8), 085022, 2013
862013
Unoccupied topological states on bismuth chalcogenides
D Niesner, T Fauster, SV Eremeev, TV Menshchikova, YM Koroteev, ...
Physical Review B—Condensed Matter and Materials Physics 86 (20), 205403, 2012
862012
Signatures of Dirac fermion-mediated magnetic order
P Sessi, F Reis, T Bathon, KA Kokh, OE Tereshchenko, M Bode
Nature communications 5 (1), 5349, 2014
852014
Microstructural and vibrational properties of PVT grown Sb2Te3 crystals
KA Kokh, VV Atuchin, TA Gavrilova, NV Kuratieva, NV Pervukhina, ...
Solid state communications 177, 16-19, 2014
842014
Growth of GaSe and GaS single crystals
KA Kokh, YM Andreev, VA Svetlichnyi, GV Lanskii, AE Kokh
Crystal Research and Technology 46 (4), 327-330, 2011
842011
Growth of high quality large size LBO crystals for high energy second harmonic generation
A Kokh, N Kononova, G Mennerat, P Villeval, S Durst, D Lupinski, ...
Journal of Crystal Growth 312 (10), 1774-1778, 2010
842010
Dual nature of magnetic dopants and competing trends in topological insulators
P Sessi, RR Biswas, T Bathon, O Storz, S Wilfert, A Barla, KA Kokh, ...
Nature communications 7 (1), 12027, 2016
822016
Inertness and degradation of (0001) surface of Bi2Se3 topological insulator
VA Golyashov, KA Kokh, SV Makarenko, KN Romanyuk, IP Prosvirin, ...
Journal of Applied Physics 112 (11), 2012
802012
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