| Crystalline graphdiyne nanosheets produced at a gas/liquid or liquid/liquid interface R Matsuoka, R Sakamoto, K Hoshiko, S Sasaki, H Masunaga, K Nagashio, ... Journal of the American Chemical Society 139 (8), 3145-3152, 2017 | 503 | 2017 |
| Contact resistivity and current flow path at metal/graphene contact K Nagashio, T Nishimura, K Kita, A Toriumi Applied Physics Letters 97 (14), 2010 | 419 | 2010 |
| Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices W Li, J Zhou, S Cai, Z Yu, J Zhang, N Fang, T Li, Y Wu, T Chen, X Xie, ... Nature Electronics 2 (12), 563-571, 2019 | 307 | 2019 |
| Purely in-plane ferroelectricity in monolayer SnS at room temperature N Higashitarumizu, H Kawamoto, CJ Lee, BH Lin, FH Chu, I Yonemori, ... Nature communications 11 (1), 2428, 2020 | 303 | 2020 |
| Layer-by-layer dielectric breakdown of hexagonal boron nitride Y Hattori, T Taniguchi, K Watanabe, K Nagashio ACS nano 9 (1), 916-921, 2015 | 245 | 2015 |
| Electrical transport properties of graphene on SiO2 with specific surface structures K Nagashio, T Yamashita, T Nishimura, K Kita, A Toriumi Journal of Applied Physics 110 (2), 2011 | 238 | 2011 |
| Metal/graphene contact as a performance killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance K Nagashio, T Nishimura, K Kita, A Toriumi 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 225 | 2009 |
| Desorption kinetics of GeO from GeO2/Ge structure SK Wang, K Kita, CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi Journal of applied physics 108 (5), 2010 | 215 | 2010 |
| Mobility variations in mono-and multi-layer graphene films K Nagashio, T Nishimura, K Kita, A Toriumi Applied physics express 2 (2), 025003, 2009 | 195 | 2009 |
| Ge/GeO2 interface control with high pressure oxidation for improving electrical characteristics CH Lee, T Tabata, T Nishimura, K Nagashio, K Kita, A Toriumi ECS Transactions 19 (1), 165, 2009 | 188 | 2009 |
| Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a key A Toriumi, T Tabata, CH Lee, T Nishimura, K Kita, K Nagashio Microelectronic Engineering 86 (7-9), 1571-1576, 2009 | 181 | 2009 |
| High-Electron-Mobilityn-MOSFETs With Two-Step Oxidation CH Lee, T Nishimura, K Nagashio, K Kita, A Toriumi IEEE transactions on electron devices 58 (5), 1295-1301, 2011 | 158 | 2011 |
| Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system T Uwanno, Y Hattori, T Taniguchi, K Watanabe, K Nagashio 2D Materials 2 (4), 041002, 2015 | 151 | 2015 |
| Density-of-states limited contact resistance in graphene field-effect transistors K Nagashio, A Toriumi Japanese Journal of Applied Physics 50 (7R), 070108, 2011 | 145 | 2011 |
| Growth mechanism of twin-related and twin-free facet Si dendrites K Nagashio, K Kuribayashi Acta Materialia 53 (10), 3021-3029, 2005 | 136 | 2005 |
| Systematic investigation of the intrinsic channel properties and contact resistance of monolayer and multilayer graphene field-effect transistor K Nagashio, T Nishimura, K Kita, A Toriumi Japanese Journal of Applied Physics 49 (5R), 051304, 2010 | 131 | 2010 |
| Ge MOSFETs performance: Impact of Ge interface passivation CH Lee, T Nishimura, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi 2010 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2010 | 120 | 2010 |
| High-electron-mobility Ge n-channel metal–oxide–semiconductor field-effect transistors with high-pressure oxidized Y2O3 T Nishimura, CH Lee, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi Applied physics express 4 (6), 064201, 2011 | 98 | 2011 |
| Solidification and casting B Cantor, K O'Reilly CRC press, 2016 | 88 | 2016 |
| Record-high electron mobility in Ge n-MOSFETs exceeding Si universality CH Lee, T Nishimura, N Saido, K Nagashio, K Kita, A Toriumi 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 84 | 2009 |
