| Fully-vertical GaN-based pin Diodes Using GaN-on-Si Epilayers X Zou, X Zhang, X Lu, CW Tang, KM Lau IEEE Electron Device Letters, 2016 | 116 | 2016 |
| Active matrix monolithic LED micro-display using GaN-on-Si epilayers X Zhang, P Li, X Zou, J Jiang, SH Yuen, CW Tang, KM Lau IEEE Photonics Technology Letters 31 (11), 865-868, 2019 | 82 | 2019 |
| Voltage-controlled GaN HEMT-LED devices as fast-switching and dimmable light emitters Y Cai, X Zou, C Liu, KM Lau IEEE Electron Device Letters 39 (2), 224-227, 2018 | 55 | 2018 |
| Fully-and quasi-vertical GaN-on-Si pin diodes: High performance and comprehensive comparison X Zhang, X Zou, X Lu, CW Tang, KM Lau IEEE Transactions on Electron Devices 64 (3), 809-815, 2017 | 52 | 2017 |
| Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers J Ma, X Zhu, KM Wong, X Zou, KM Lau Journal of crystal growth 370, 265-268, 2013 | 51 | 2013 |
| Low-leakage High-breakdown Laterally Integrated HEMT-LED via n-GaN Electrode C Liu, Y Cai, X Zou, KM Lau IEEE Photonics Technology Letters, 2016 | 50 | 2016 |
| Vertical β‐Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance X Lu, X Zhang, H Jiang, X Zou, KM Lau, G Wang physica status solidi (a), 2020 | 49 | 2020 |
| Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper KM Lau, KM Wong, X Zou, P Chen Optics Express 19 (104), A956-A961, 2011 | 44 | 2011 |
| Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing X Lu, H Jiang, C Liu, X Zou, KM Lau Semiconductor Science and Technology 31 (5), 055019, 2016 | 37 | 2016 |
| InP-based near infrared/extended-short wave infrared dual-band photodetector Z Xie, Z Deng, X Zou, B Chen IEEE Photonics Technology Letters 32 (16), 1003-1006, 2020 | 36 | 2020 |
| Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure X Lu, C Liu, H Jiang, X Zou, A Zhang, KM Lau Applied Physics Letters 109 (5), 2016 | 36 | 2016 |
| Breakdown Ruggedness of Quasi-vertical GaN-based pin Diodes on Si Substrates X Zou, X Zhang, X Lu, CW Tang, KM Lau Electron Device Letters, 2016 | 35 | 2016 |
| InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates D Deng, N Yu, Y Wang, X Zou, HC Kuo, P Chen, KM Lau Applied Physics Letters 96 (20), 2010 | 33 | 2010 |
| High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates X Zou, KM Wong, X Zhu, WC Chong, J Ma, KM Lau IEEE Electron Device Letters 34 (7), 903-905, 2013 | 28 | 2013 |
| Transfer of GaN-based light-emitting diodes from silicon growth substrate to copper KM Wong, X Zou, P Chen, KM Lau IEEE electron device letters 31 (2), 132-134, 2009 | 27 | 2009 |
| Electrical characterization of GaN Schottky barrier diode at cryogenic temperatures J Chen, M Zhu, X Lu, X Zou Applied Physics Letters 116 (6), 2020 | 23 | 2020 |
| High performance monolithically integrated GaN driving VMOSFET on LED X Lu, C Liu, H Jiang, X Zou, KM Lau IEEE Electron Device Letters 38 (6), 752-755, 2017 | 23 | 2017 |
| Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding X Zou, X Zhang, WC Chong, CW Tang, KM Lau IEEE Transactions on Electron Devices, 2016 | 23 | 2016 |
| A review on GaN-based two-terminal devices grown on Si substrates Y Zhang, C Liu, M Zhu, Y Zhang, X Zou Journal of Alloys and Compounds 869, 159214, 2021 | 21 | 2021 |
| Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate X Lu, C Liu, H Jiang, X Zou, A Zhang, KM Lau Applied Physics Express 9 (3), 031001, 2016 | 21 | 2016 |