| Correlation between titania film structure and near ultraviolet optical absorption JD DeLoach, G Scarel, CR Aita Journal of applied physics 85 (4), 2377-2384, 1999 | 121 | 1999 |
| Thickness-dependent crystallinity of sputter-deposited titania JD DeLoach, CR Aita Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (3 …, 1998 | 56 | 1998 |
| An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes R Khamankar, H Bu, C Bowen, S Chakravarthi, PR Chidambaram, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 162-163, 2004 | 29 | 2004 |
| Method for manufacturing a semiconductor device containing metal silicide regions J Deloach, LH Hall, LS Robertson, JP Lu, DS Miles US Patent 7,422,967, 2008 | 22 | 2008 |
| In situ hardmask pullback using an in situ plasma resist trim process J Deloach, BA Smith US Patent 7,320,927, 2008 | 20 | 2008 |
| Optical absorption behavior of nanolaminate films CR Aita, JD DeLoach, RS Sorbello Journal of applied physics 94 (1), 654-663, 2003 | 18 | 2003 |
| Method for moat nitride pull back for shallow trench isolation F Mehrad, Z Chen, J Deloach US Patent 6,818,526, 2004 | 15 | 2004 |
| interface structure in nanolaminates with ultrathin periodicity CR Aita, JD DeLoach, VV Yakovlev Applied physics letters 81 (2), 238-240, 2002 | 15 | 2002 |
| Phase development in annealed zirconia-titania nanolaminates JD DeLoach, JJ Shibilski, CR Crape, CR Aita Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (6 …, 2000 | 13 | 2000 |
| Growth-controlled cubic zirconia microstructure in zirconia–titania nanolaminates JD DeLoach, CR Aita, CK Loong Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (5 …, 2002 | 12 | 2002 |
| 60 nm gate length dual-Vt CMOS for high performance applications M Mehrotra, J Wu, A Jain, T Laaksonen, K Kim, W Bather, R Koshy, ... 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002 | 12 | 2002 |
| Method for forming a metal silicide H Bu, S Ekbote, J Deloach US Patent 7,897,513, 2011 | 10 | 2011 |
| Process method to fabricate cmos circuits with dual stress contact etch-stop liner layers S Yu, J Deloach, BA Smith, YS Obeng, SG Bushman US Patent App. 11/778,321, 2009 | 9 | 2009 |
| Nickel salicide process technology for cmos devices of 90nm node and beyond JP Lu, DS Miles, J DeLoach, DF Yue, PJ Chen, T Bonifield, S Crank, ... 2006 International Workshop on Junction Technology, 127-133, 2006 | 9 | 2006 |
| Nickel silicide formation for semiconductor components J Deloach, JP Lu, H Bu US Patent 8,546,259, 2013 | 8 | 2013 |
| High refractive index< 100>-textured cubic zirconia formed in nanolaminates using titania interruption layers JD DeLoach, CR Aita Journal of materials science letters 19 (13), 1123-1125, 2000 | 8 | 2000 |
| Dielectric function of thin-film titanium oxide with a granular nanostructure RS Sorbello, JD DeLoach, CR Aita, P Fejes Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 7 | 2004 |
| A high performance 90 nm logic technology with a 37 nm gate length, dual plasma nitrided gate dielectric and differential offset spacer B Hornung, R Khamankar, H Niimi, M Goodwin, L Robertson, D Miles, ... 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003 | 6 | 2003 |
| Method of manufacturing metal silicide contacts YS Obeng, J Deloach, F Mehrad US Patent 7,670,952, 2010 | 5 | 2010 |
| Forming a trench to define one or more isolation regions in a semiconductor structure J Deloach, F Mehrad, BM Trentman, TA Yocum US Patent 6,905,943, 2005 | 3 | 2005 |