Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures D Spirkoska, J Arbiol, A Gustafsson, S Conesa-Boj, F Glas, I Zardo, ... Physical Review B—Condensed Matter and Materials Physics 80 (24), 245325, 2009 | 580 | 2009 |
Self-assembled quantum dots in a nanowire system for quantum photonics M Heiss, Y Fontana, A Gustafsson, G Wüst, C Magen, DD O’regan, ... Nature materials 12 (5), 439-444, 2013 | 414 | 2013 |
Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules, and strain effects I Zardo, S Conesa-Boj, F Peiro, JR Morante, J Arbiol, E Uccelli, ... Physical Review B—Condensed Matter and Materials Physics 80 (24), 245324, 2009 | 295 | 2009 |
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures M Heiss, S Conesa-Boj, J Ren, HH Tseng, A Gali, A Rudolph, E Uccelli, ... Physical Review B—Condensed Matter and Materials Physics 83 (4), 045303, 2011 | 259 | 2011 |
Ballistic superconductivity in semiconductor nanowires H Zhang, Ö Gül, S Conesa-Boj, MP Nowak, M Wimmer, K Zuo, V Mourik, ... Nature communications 8 (1), 16025, 2017 | 239 | 2017 |
Hexagonal silicon realized HIT Hauge, MA Verheijen, S Conesa-Boj, T Etzelstorfer, M Watzinger, ... Nano letters 15 (9), 5855-5860, 2015 | 201 | 2015 |
Hard superconducting gap in InSb nanowires O Gül, H Zhang, FK de Vries, J van Veen, K Zuo, V Mourik, ... Nano letters 17 (4), 2690-2696, 2017 | 152 | 2017 |
Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts L Yu, B O’Donnell, PJ Alet, S Conesa-Boj, F Peiro, J Arbiol, ... Nanotechnology 20 (22), 225604, 2009 | 152 | 2009 |
III–V nanowire arrays: growth and light interaction M Heiss, E Russo-Averchi, A Dalmau-Mallorquí, G Tütüncüoğlu, ... Nanotechnology 25 (1), 014015, 2013 | 126 | 2013 |
Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires M Heigoldt, J Arbiol, D Spirkoska, JM Rebled, S Conesa-Boj, G Abstreiter, ... Journal of Materials Chemistry 19 (7), 840-848, 2009 | 114 | 2009 |
Gold-free ternary III–V antimonide nanowire arrays on silicon: twin-free down to the first bilayer S Conesa-Boj, D Kriegner, XL Han, S Plissard, X Wallart, J Stangl, ... Nano letters 14 (1), 326-332, 2014 | 105 | 2014 |
Modulation doping of GaAs/AlGaAs core–shell nanowires with effective defect passivation and high electron mobility JL Boland, S Conesa-Boj, P Parkinson, G Tütüncüoglu, F Matteini, ... Nano letters 15 (2), 1336-1342, 2015 | 103 | 2015 |
Analysis of the atomic layer deposited Al2O3 field-effect passivation in black silicon G Von Gastrow, R Alcubilla, P Ortega, M Yli-Koski, S Conesa-Boj, ... Solar Energy Materials and Solar Cells 142, 29-33, 2015 | 92 | 2015 |
Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires I Zardo, L Yu, S Conesa-Boj, S Estradé, PJ Alet, J Rössler, M Frimmer, ... Nanotechnology 20 (15), 155602, 2009 | 90 | 2009 |
Catalyst-free nanowires with axial InxGa1− xAs/GaAs heterostructures M Heiß, A Gustafsson, S Conesa-Boj, F Peiró, JR Morante, G Abstreiter, ... Nanotechnology 20 (7), 075603, 2009 | 86 | 2009 |
Single-crystalline hexagonal silicon–germanium HIT Hauge, S Conesa-Boj, MA Verheijen, S Koelling, EPAM Bakkers Nano Letters 17 (1), 85-90, 2017 | 84 | 2017 |
Boosting hole mobility in coherently strained [110]-oriented Ge–Si core–shell nanowires S Conesa-Boj, A Li, S Koelling, M Brauns, J Ridderbos, TT Nguyen, ... Nano letters 17 (4), 2259-2264, 2017 | 77 | 2017 |
Carrier confinement in GaN/AlGaN nanowire heterostructures ( 1) F Furtmayr, J Teubert, P Becker, S Conesa-Boj, JR Morante, A Chernikov, ... Physical Review B—Condensed Matter and Materials Physics 84 (20), 205303, 2011 | 76 | 2011 |
Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires AM Graham, P Corfdir, M Heiss, S Conesa-Boj, E Uccelli, ... Physical Review B—Condensed Matter and Materials Physics 87 (12), 125304, 2013 | 73 | 2013 |
Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition I Zardo, S Conesa-Boj, S Estradé, L Yu, F Peiro, P Roca i Cabarrocas, ... Applied Physics A 100, 287-296, 2010 | 64 | 2010 |