| Giant Rashba‐Type Spin Splitting in Ferroelectric GeTe (111) M Liebmann, C Rinaldi, D Di Sante, J Kellner, C Pauly, RN Wang, ... Advanced Materials 28 (3), 560-565, 2016 | 208 | 2016 |
| Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ... Scientific reports 6 (1), 23843, 2016 | 127 | 2016 |
| Surface reconstruction-induced coincidence lattice formation between two-dimensionally bonded materials and a three-dimensionally bonded substrate JE Boschker, J Momand, V Bragaglia, R Wang, K Perumal, A Giussani, ... Nano letters 14 (6), 3534-3538, 2014 | 95 | 2014 |
| Robust topological surface states in SbTe layers as seen from the weak antilocalization effect Y Takagaki, A Giussani, K Perumal, R Calarco, KJ Friedland Physical Review B—Condensed Matter and Materials Physics 86 (12), 125137, 2012 | 93 | 2012 |
| Toward truly single crystalline GeTe films: The relevance of the substrate surface R Wang, JE Boschker, E Bruyer, DD Sante, S Picozzi, K Perumal, ... The Journal of Physical Chemistry C 118 (51), 29724-29730, 2014 | 89 | 2014 |
| Ferroelectric switching in epitaxial GeTe films AV Kolobov, DJ Kim, A Giussani, P Fons, J Tominaga, R Calarco, ... APL Materials 2 (6), 2014 | 89 | 2014 |
| Mirror-symmetric Magneto-optical Kerr Rotation using Visible Light in [(GeTe)2(Sb2Te3)1]n Topological Superlattices D Bang, H Awano, J Tominaga, AV Kolobov, P Fons, Y Saito, K Makino, ... Scientific reports 4 (1), 5727, 2014 | 72 | 2014 |
| On the epitaxy of germanium telluride thin films on silicon substrates A Giussani, K Perumal, M Hanke, P Rodenbach, H Riechert, R Calarco physica status solidi (b) 249 (10), 1939-1944, 2012 | 53 | 2012 |
| Atomically smooth and single crystalline Ge (111)/cubic-Pr2O3 (111)/Si (111) heterostructures: Structural and chemical composition study A Giussani, P Rodenbach, P Zaumseil, J Dabrowski, R Kurps, G Weidner, ... Journal of Applied Physics 105 (3), 2009 | 51 | 2009 |
| Structural change upon annealing of amorphous GeSbTe grown on Si (111) V Bragaglia, B Jenichen, A Giussani, K Perumal, H Riechert, R Calarco Journal of Applied Physics 116 (5), 2014 | 47 | 2014 |
| Crystalline GeTe-based phase-change alloys: Disorder in order M Krbal, AV Kolobov, P Fons, J Tominaga, SR Elliott, J Hegedus, ... Physical Review B—Condensed Matter and Materials Physics 86 (4), 045212, 2012 | 47 | 2012 |
| Single crystalline Sc2O3/Y2O3 heterostructures as novel engineered buffer approach for GaN integration on Si (111) L Tarnawska, A Giussani, P Zaumseil, MA Schubert, R Paszkiewicz, ... Journal of Applied Physics 108 (6), 2010 | 47 | 2010 |
| Insight into the growth and control of single-crystal layers of Ge–Sb–Te phase-change material F Katmis, R Calarco, K Perumal, P Rodenbach, A Giussani, M Hanke, ... Crystal Growth & Design 11 (10), 4606-4610, 2011 | 43 | 2011 |
| Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors T Schroeder, A Giussani, J Dabrowski, P Zaumseil, HJ Müssig, O Seifarth, ... physica status solidi (c) 6 (3), 653-662, 2009 | 43 | 2009 |
| Evidence for topological band inversion of the phase change material Ge2Sb2Te5 C Pauly, M Liebmann, A Giussani, J Kellner, S Just, J Sánchez-Barriga, ... Applied Physics Letters 103 (24), 2013 | 40 | 2013 |
| The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2 (111)∕ Si (111) support systems A Giussani, O Seifarth, P Rodenbach, HJ Müssig, P Zaumseil, ... Journal of Applied Physics 103 (8), 2008 | 40 | 2008 |
| Postdeposition annealing induced transition from hexagonal Pr2O3 to cubic PrO2 films on Si (111) T Weisemoeller, F Bertram, S Gevers, A Greuling, C Deiter, H Tobergte, ... Journal of Applied Physics 105 (12), 2009 | 37 | 2009 |
| Epitaxy of single crystalline PrO2 films on Si (111) T Weisemoeller, C Deiter, F Bertram, S Gevers, A Giussani, P Zaumseil, ... Applied Physics Letters 93 (3), 2008 | 37 | 2008 |
| Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials KV Mitrofanov, P Fons, K Makino, R Terashima, T Shimada, AV Kolobov, ... Scientific reports 6 (1), 20633, 2016 | 36 | 2016 |
| Epitaxial phase‐change materials P Rodenbach, R Calarco, K Perumal, F Katmis, M Hanke, A Proessdorf, ... physica status solidi (RRL)-Rapid Research Letters 6 (11), 415-417, 2012 | 35 | 2012 |
