| Spintronics based random access memory: a review S Bhatti, R Sbiaa, A Hirohata, H Ohno, S Fukami, SN Piramanayagam Materials Today 20 (9), 530-548, 2017 | 1181 | 2017 |
| Materials with perpendicular magnetic anisotropy for magnetic random access memory R Sbiaa, H Meng, SN Piramanayagam physica status solidi (RRL)–Rapid Research Letters 5 (12), 413-419, 2011 | 336 | 2011 |
| Annealing effects on CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy H Meng, WH Lum, R Sbiaa, SYH Lua, HK Tan Journal of applied physics 110 (3), 2011 | 116 | 2011 |
| Reduction of switching current by spin transfer torque effect in perpendicular anisotropy magnetoresistive devices R Sbiaa, SYH Lua, R Law, H Meng, R Lye, HK Tan Journal of Applied Physics 109 (7), 2011 | 109 | 2011 |
| Domain wall memory: Physics, materials, and devices D Kumar, T Jin, R Sbiaa, M Kläui, S Bedanta, S Fukami, D Ravelosona, ... Physics Reports 958, 1-35, 2022 | 95 | 2022 |
| Patterned media towards nano-bit magnetic recording: Fabrication and challenges R Sbiaa, SN Piramanayagam Recent patents on nanotechnology 1 (1), 29-40, 2007 | 92 | 2007 |
| Composed free layer for stabilizing magnetoresistive head having low magnetostriction R Sbiaa US Patent App. 10/572,070, 2007 | 82 | 2007 |
| Spin transfer switching enhancement in perpendicular anisotropy magnetic tunnel junctions with a canted in-plane spin polarizer R Sbiaa, R Law, EL Tan, T Liew Journal of Applied Physics 105 (1), 2009 | 79 | 2009 |
| Effects of Ta seed layer and annealing on magnetoresistance in CoFe∕ Pd-based pseudo-spin-valves with perpendicular anisotropy R Law, R Sbiaa, T Liew, TC Chong Applied Physics Letters 91 (24), 2007 | 77 | 2007 |
| Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction VB Naik, H Meng, R Sbiaa Aip Advances 2 (4), 2012 | 70 | 2012 |
| Recent developments in spin transfer torque MRAM R Sbiaa, SN Piramanayagam physica status solidi (RRL)–Rapid Research Letters 11 (12), 1700163, 2017 | 63 | 2017 |
| Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy H Meng, R Sbiaa, MAK Akhtar, RS Liu, VB Naik, CC Wang Applied Physics Letters 100 (12), 2012 | 61 | 2012 |
| Effect of magnetostatic energy on domain structure and magnetization reversal in (Co/Pd) multilayers R Sbiaa, Z Bilin, M Ranjbar, HK Tan, SJ Wong, SN Piramanayagam, ... Journal of Applied Physics 107 (10), 2010 | 60 | 2010 |
| Magnetoresistance Device T Tahmasebi, SN Piramanayagam, R Sbiaa US Patent App. 13/599,169, 2013 | 56 | 2013 |
| Staggered magnetic nanowire devices for effective domain-wall pinning in racetrack memory M Al Bahri, B Borie, TL Jin, R Sbiaa, M Kläui, SN Piramanayagam Physical Review Applied 11 (2), 024023, 2019 | 55 | 2019 |
| Spin transfer torque switching for multi-bit per cell magnetic memory with perpendicular anisotropy R Sbiaa, R Law, SYH Lua, EL Tan, T Tahmasebi, CC Wang, ... Applied Physics Letters 99 (9), 2011 | 53 | 2011 |
| Reduction in critical current for spin transfer switching in perpendicular anisotropy spin valves using an in-plane spin polarizer R Law, EL Tan, R Sbiaa, T Liew, TC Chong Applied Physics Letters 94 (6), 2009 | 50 | 2009 |
| Magnetoresistive device Y Luo, R Sbiaa, YHS Lua US Patent 9,343,128, 2016 | 48 | 2016 |
| Composite free layer for stabilizing magnetoresistive head R Sbiaa, I Sato US Patent 7,495,867, 2009 | 46 | 2009 |
| Granular type free layer and magnetic head R Sbiaa, I Sato, H Morita US Patent App. 10/998,660, 2006 | 45 | 2006 |