| SiC power devices—Present status, applications and future perspective M Östling, R Ghandi, CM Zetterling 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011 | 279 | 2011 |
| Ohmic contact properties of magnetron sputtered Ti3SiC2 on n-and p-type 4H-silicon carbide K Buchholt, R Ghandi, M Domeij, CM Zetterling, J Lu, P Eklund, L Hultman, ... Applied physics letters 98 (4), 2011 | 99 | 2011 |
| High-voltage 4H-SiC PiN diodes with etched junction termination extension R Ghandi, B Buono, M Domeij, G Malm, CM Zetterling, M Ostling IEEE Electron Device Letters 30 (11), 1170-1172, 2009 | 86 | 2009 |
| Surface-passivation effects on the performance of 4H-SiC BJTs R Ghandi, B Buono, M Domeij, R Esteve, A Schöner, J Han, S Dimitrijev, ... IEEE Transactions on Electron Devices 58 (1), 259-265, 2010 | 82 | 2010 |
| Modeling and characterization of current gain versus temperature in 4H-SiC power BJTs B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling IEEE Transactions on Electron Devices 57 (3), 704-711, 2010 | 77 | 2010 |
| Design and characterization of high-temperature ECL-based bipolar integrated circuits in 4H-SiC L Lanni, R Ghandi, BG Malm, CM Zetterling, M Ostling IEEE Transactions on Electron Devices 59 (4), 1076-1083, 2012 | 67 | 2012 |
| Fabrication of 2700-V 12- Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50 R Ghandi, HS Lee, M Domeij, B Buono, CM Zetterling, M Ostling IEEE Electron Device Letters 29 (10), 1135-1137, 2008 | 54 | 2008 |
| Silicon carbide integrated circuits for extreme environments AS Kashyap, CP Chen, R Ghandi, A Patil, E Andarawis, L Yin, ... The 1st IEEE workshop on wide bandgap power devices and applications, 60-63, 2013 | 48 | 2013 |
| Silicon carbide integrated circuits with stable operation over a wide temperature range R Ghandi, CP Chen, L Yin, X Zhu, L Yu, S Arthur, F Ahmad, P Sandvik IEEE Electron Device Letters 35 (12), 1206-1208, 2014 | 44 | 2014 |
| High-voltage (2.8 kV) implantation-free 4H-SiC BJTs with long-term stability of the current gain R Ghandi, B Buono, M Domeij, CM Zetterling, M Ostling IEEE transactions on electron devices 58 (8), 2665-2669, 2011 | 43 | 2011 |
| SiC MOSFET design considerations for reliable high voltage operation PA Losee, A Bolotnikov, LC Yu, G Dunne, D Esler, J Erlbaum, B Rowden, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 2A-2.1-2A-2.8, 2017 | 41 | 2017 |
| Pattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors J Hållstedt, M Kolahdouz, R Ghandi, HH Radamson, R Wise Journal of Applied Physics 103 (5), 2008 | 39 | 2008 |
| Influence of emitter width and emitter–base distance on the current gain in 4H-SiC power BJTs B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Östling IEEE transactions on electron devices 57 (10), 2664-2670, 2010 | 36 | 2010 |
| 4.5 kV SiC charge-balanced MOSFETs with ultra-low on-resistance R Ghandi, A Bolotnikov, S Kennerly, C Hitchcock, P Tang, TP Chow 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 34 | 2020 |
| High-current-gain SiC BJTs with regrown extrinsic base and etched JTE HS Lee, M Domeij, R Ghandi, CM Zetterling, M Ostling IEEE transactions on electron devices 55 (8), 1894-1898, 2008 | 30 | 2008 |
| Future high temperature applications for SiC integrated circuits CM Zetterling, L Lanni, R Ghandi, BG Malm, M Östling physica status solidi c 9 (7), 1647-1650, 2012 | 27 | 2012 |
| 3kV SiC charge-balanced diodes breaking unipolar limit R Ghandi, A Bolotnikov, D Lilienfeld, S Kennerly, R Ravisekhar 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 26 | 2019 |
| Kinetic model of SiGe selective epitaxial growth using RPCVD technique M Kolahdouz, L Maresca, R Ghandi, A Khatibi, HH Radamson Journal of The Electrochemical Society 158 (4), H457, 2011 | 25 | 2011 |
| Modeling and characterization of the on-resistance in 4H-SiC power BJTs B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling IEEE transactions on electron devices 58 (7), 2081-2087, 2011 | 24 | 2011 |
| SiC charge-balanced devices offering breakthrough performance surpassing the 1-D Ron versus BV limit A Bolotnikov, PA Losee, R Ghandi, S Kennerly, R Datta, X She Materials Science Forum 963, 655-659, 2019 | 23 | 2019 |
