Dielectrophoretic separation and manipulation of live and heat-treated cells of Listeria on microfabricated devices with interdigitated electrodes H Li, R Bashir Sensors and actuators B: chemical 86 (2-3), 215-221, 2002 | 407 | 2002 |
Characterization and modeling of a microfluidic dielectrophoresis filter for biological species H Li, Y Zheng, D Akin, R Bashir Journal of microelectromechanical systems 14 (1), 103-112, 2005 | 121 | 2005 |
Selective data recycling in non-volatile memory Y Cai, F Zhang, H Li, J Lee US Patent 10,002,073, 2018 | 111* | 2018 |
Threshold voltage adjustment for a select gate transistor in a stacked non-volatile memory device H Li, X Costa, M Higashitani, ML Mui US Patent 8,867,271, 2014 | 91 | 2014 |
Real-time virus trapping and fluorescent imaging in microfluidic devices D Akin, H Li, R Bashir Nano Letters 4 (2), 257-259, 2004 | 71 | 2004 |
Reading voltage calculation in solid-state storage devices Y Sun, D Zhao, H Li, KS Stoev US Patent App. 13/917,518, 2014 | 60 | 2014 |
Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current X Costa, H Li, M Higashitani, ML Mui US Patent 9,019,775, 2015 | 58 | 2015 |
Detect developed bad blocks in non-volatile memory devices H Li, S Kim, J Han US Patent 10,020,072, 2018 | 39* | 2018 |
Modeling of threshold voltage distribution in NAND flash memory: A Monte Carlo method H Li IEEE Transactions on Electron Devices 63 (9), 3527-3532, 2016 | 39 | 2016 |
Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits X Costa, H Li, M Higashitani, ML Mui US Patent 8,787,094, 2014 | 32 | 2014 |
Erase inhibit for 3D non-volatile memory H Li, X Costa US Patent 8,488,382, 2013 | 32 | 2013 |
Systems and methods of write precompensation to extend life of a solid-state memory KS Stoev, H Li, D Zhao, Y Sun US Patent 9,013,920, 2015 | 31 | 2015 |
Erase operation with controlled select gate voltage for 3D non-volatile memory H Li, X Costa, C Zhang US Patent 8,908,435, 2014 | 31 | 2014 |
Structural characteristics and hardness of zirconium carbide films prepared by tri-ion beam-assisted deposition XM He, L Shu, HB Li, HD Li, ST Lee Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (4 …, 1998 | 31 | 1998 |
Erase for 3D non-volatile memory with sequential selection of word lines X Costa, S Yu, RE Scheuerlein, H Li, ML Mui US Patent 8,908,444, 2014 | 28 | 2014 |
Sensing for NAND memory based on word line position H Li US Patent 8,441,853, 2013 | 24 | 2013 |
Data retention monitoring using temperature history in solid state drives D Zhao, Y Sun, H Li, KS Stoev, MML Syu US Patent 9,165,668, 2015 | 21 | 2015 |
Data retention flags in solid-state drives D Zhao, Y Sun, H Li, JY Yang, K Stoev US Patent 9,263,136, 2016 | 19 | 2016 |
High corrosion resistant ZrC films synthesized by ion-beamassisted deposition XM He, L Shu, HB Li, D Weng Journal of materials research 14 (2), 615-618, 1999 | 19 | 1999 |
Using channel-to-channel coupling to compensate floating gate-to-floating gate coupling in programming of non-volatile memory H Li, G Liang US Patent 8,395,936, 2013 | 18 | 2013 |