| Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing F Rao, K Ding, Y Zhou, Y Zheng, M Xia, S Lv, Z Song, S Feng, ... Science 358 (6369), 1423-1427, 2017 | 558 | 2017 |
| A highly CMOS compatible hafnia-based ferroelectric diode Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang, R Huang, W Wei, ... Nature communications 11 (1), 1391, 2020 | 194 | 2020 |
| Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film Y Cheng, Z Gao, KH Ye, HW Park, Y Zheng, Y Zheng, J Gao, MH Park, ... Nature communications 13 (1), 645, 2022 | 126 | 2022 |
| Direct observation of metastable face-centered cubic Sb2Te3 crystal Y Zheng, M Xia, Y Cheng, F Rao, K Ding, W Liu, Y Jia, Z Song, S Feng Nano Research 9, 3453-3462, 2016 | 94 | 2016 |
| Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory Y Wang, Y Zheng, G Liu, T Li, T Guo, Y Cheng, S Lv, S Song, K Ren, ... Applied Physics Letters 112 (13), 2018 | 77 | 2018 |
| Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory Q Wang, B Liu, Y Xia, Y Zheng, R Huo, Q Zhang, S Song, Y Cheng, ... Applied Physics Letters 107 (22), 2015 | 66 | 2015 |
| Understanding the Effect of Al Doping on the Electrochemical Performance Improvement of the LiMn2O4 Cathode Material W Xu, Y Zheng, Y Cheng, R Qi, H Peng, H Lin, R Huang ACS Applied Materials & Interfaces 13 (38), 45446-45454, 2021 | 62 | 2021 |
| A candidate Zr-doped Sb2Te alloy for phase change memory application Y Zheng, Y Cheng, M Zhu, X Ji, Q Wang, S Song, Z Song, W Liu, S Feng Applied Physics Letters 108 (5), 2016 | 61 | 2016 |
| Outstanding strengthening behavior and dynamic mechanical properties of in-situ Al–Al3Ni composites by Cu addition JT Kim, V Soprunyuk, N Chawake, YH Zheng, F Spieckermann, SH Hong, ... Composites Part B: Engineering 189, 107891, 2020 | 56 | 2020 |
| Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5 Y Zheng, Y Wang, T Xin, Y Cheng, R Huang, P Liu, M Luo, Z Zhang, S Lv, ... Communications Chemistry 2 (1), 13, 2019 | 47 | 2019 |
| Phase change memory based on Ta–Sb–Te alloy–Towards a universal memory Y Xue, Y Cheng, Y Zheng, S Yan, W Song, S Lv, S Song, Z Song Materials Today Physics 15, 100266, 2020 | 41 | 2020 |
| Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film Z Gao, Y Luo, S Lyu, Y Cheng, Y Zheng, Q Zhong, W Zhang, H Lyu IEEE Electron Device Letters 42 (9), 1303-1306, 2021 | 39 | 2021 |
| Atomic insights into surface orientations and oxygen vacancies in the LiMn2O4 cathode for lithium storage W Xu, Y Zheng, L Lin, W Lei, Z Wang, H Song, Y Cheng, R Qi, H Peng, ... Journal of Alloys and Compounds 870, 159387, 2021 | 35 | 2021 |
| Carbon doping induced Ge local structure change in as-deposited Ge2Sb2Te5 film by EXAFS and Raman spectrum T Li, L Wu, X Ji, Y Zheng, G Liu, Z Song, J Shi, M Zhu, S Song, S Feng AIP Advances 8 (2), 2018 | 33 | 2018 |
| Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film Y Zheng, Y Cheng, R Huang, R Qi, F Rao, K Ding, W Yin, S Song, W Liu, ... Scientific reports 7 (1), 5915, 2017 | 33 | 2017 |
| Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory Q Wang, B Liu, Y Xia, Y Zheng, R Huo, M Zhu, S Song, S Lv, Y Cheng, ... physica status solidi (RRL)–Rapid Research Letters 9 (8), 470-474, 2015 | 32 | 2015 |
| Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application X Chen, Y Zheng, M Zhu, K Ren, Y Wang, T Li, G Liu, T Guo, L Wu, X Liu, ... Scientific Reports 8 (1), 6839, 2018 | 31 | 2018 |
| Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2 films: vacancy generation and lattice dislocation Y Zheng, Y Zheng, Z Gao, JH Yuan, Y Cheng, Q Zhong, T Xin, Y Wang, ... 2021 IEEE International Electron Devices Meeting (IEDM), 33.5. 1-33.5. 4, 2021 | 27 | 2021 |
| Microscopic mechanism of carbon-dopant manipulating device performance in CGeSbTe-based phase change random access memory Y Cheng, D Cai, Y Zheng, S Yan, L Wu, C Li, W Song, T Xin, S Lv, ... ACS applied materials & interfaces 12 (20), 23051-23059, 2020 | 27 | 2020 |
| Atomic insights on intermixing of nanoscale nitride multilayer triggered by nanoindentation Z Chen, Y Zheng, L Löfler, M Bartosik, GK Nayak, O Renk, D Holec, ... Acta materialia 214, 117004, 2021 | 26 | 2021 |
