| Structural and electronic properties of and centers in GaN from optical and EPR experiments E Malguth, A Hoffmann, W Gehlhoff, O Gelhausen, MR Phillips, X Xu Physical Review B—Condensed Matter and Materials Physics 74 (16), 165202, 2006 | 132 | 2006 |
| Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals C Rauch, W Gehlhoff, MR Wagner, E Malguth, G Callsen, R Kirste, ... Journal of Applied Physics 107 (2), 2010 | 99 | 2010 |
| Transition metal ions in crystals with the fluorite structure W Gehlhoff, W Ulrici Physica Status Solidi. B, Basic Research 102 (1), 11-59, 1980 | 80 | 1980 |
| Phase and amplitude response of the ‘0.7 feature’caused by holes in silicon one-dimensional wires and rings NT Bagraev, NG Galkin, W Gehlhoff, LE Klyachkin, AM Malyarenko Journal of Physics: Condensed Matter 20 (16), 164202, 2008 | 77 | 2008 |
| A systematic study on zinc oxide materials containing group I metals (Li, Na, K)− synthesis from organometallic precursors, characterization, and properties S Polarz, A Orlov, A Hoffmann, MR Wagner, C Rauch, R Kirste, ... Chemistry of Materials 21 (16), 3889-3897, 2009 | 60 | 2009 |
| Quantized conductance in silicon quantum wires NT Bagraev, AD Buravlev, LE Klyachkin, AM Malyarenko, W Gehlhoff, ... Semiconductors 36, 439-460, 2002 | 60 | 2002 |
| EPR of iron‐boron centres in silicon W Gehlhoff, KH Segsa physica status solidi (b) 115 (2), 443-453, 1983 | 60 | 1983 |
| Electron paramagnetic resonance of the Mn cluster in silicon J Kreissl, W Gehlhoff physica status solidi (b) 145 (2), 609-617, 1988 | 56 | 1988 |
| EPR Investigations of ZnS: Mn and ZnSe: Mn) Single Crystals, Powders, Thin‐Film Structures J Kreissl, W Gehlhoff physica status solidi (a) 81 (2), 701-707, 1984 | 51 | 1984 |
| Electron paramagnetic resonance in transition metal-doped ZnO nanowires AO Ankiewicz, MC Carmo, NA Sobolev, W Gehlhoff, EM Kaidashev, ... Journal of applied physics 101 (2), 2007 | 48 | 2007 |
| Shallow and deep centers in heavily doped silicon quantum wells W Gehlhoff, NT Bagraev, LE Klyachkin Materials Science Forum 196, 467-472, 1995 | 44 | 1995 |
| Quantum-well boron and phosphorus diffusion profiles in silicon NT Bagraev, W Gehlhoff, LE Klyachkin, A Naeser, SA Rykov Defect and Diffusion Forum 143, 1003-1008, 1997 | 42 | 1997 |
| Iron group impurities in Β-FeSi 2 sstudied by EPR K Irmscher, W Gehlhoff, Y Tomm, H Lange, V Alex Physical Review B 55 (7), 4417, 1997 | 41 | 1997 |
| Electron paramagnetic resonance identification of the orthorhombic iron-indium pair in silicon W Gehlhoff, P Emanuelsson, P Omling, HG Grimmeiss Physical Review B 41 (12), 8560, 1990 | 39 | 1990 |
| Self-assembled impurity superlattices and microcavities in silicon N Bagraev, A Bouravleuv, W Gehlhoff, L Klyachkin, A Malyarenko, ... diffusion and defect data part a defect and diffusion forum, 673-678, 2001 | 37 | 2001 |
| AM Ma lyarenko, VV Romanov, and SA Rykov NT Bagraev, W Gehlhoff, LE Klyachkin Physica C 437 (438), 21, 2006 | 36 | 2006 |
| EDESR and ODMR of impurity centers in nanostructures inserted in silicon microcavities NT Bagraev, VA Mashkov, EY Danilovsky, W Gehlhoff, DS Gets, ... Applied Magnetic Resonance 39, 113-135, 2010 | 33 | 2010 |
| Cyclotron resonance in heavily doped silicon quantum wells W Gehlhoff, NT Bagraev, LE Klyachkin Solid State Phenomena 47, 589-594, 1995 | 33 | 1995 |
| High-temperature single-hole silicon transistors NT Bagraev, LE Klyachkin, AM Malyarenko, W Gehlhoff Superlattices and Microstructures 23 (6), 1333-1339, 1998 | 32 | 1998 |
| Spin-dependent transport of holes in silicon quantum wells confined by superconductor barriers NT Bagraev, W Gehlhoff, LE Klyachkin, AA Kudryavtsev, AM Malyarenko, ... Physica C: Superconductivity and its applications 468 (7-10), 840-843, 2008 | 31 | 2008 |
Axel HoffmannInstitute of Solid State Physics, Technical University of BerlinVerified email at tu-berlin.de
