Two-dimensional materials for next-generation computing technologies C Liu, H Chen, S Wang, Q Liu, YG Jiang, DW Zhang, M Liu, P Zhou Nature Nanotechnology 15 (7), 545-557, 2020 | 765 | 2020 |
A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications C Liu, X Yan, X Song, S Ding, DW Zhang, P Zhou Nature nanotechnology 13 (5), 404-410, 2018 | 376 | 2018 |
All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition Z Zhang, S Wang, C Liu, R Xie, W Hu, P Zhou Nature Nanotechnology 17 (1), 27-32, 2022 | 298 | 2022 |
Tunable SnSe2/WSe2 Heterostructure Tunneling Field Effect Transistor X Yan, C Liu, C Li, W Bao, S Ding, DW Zhang, P Zhou Small 13 (34), 1701478, 2017 | 214 | 2017 |
Small footprint transistor architecture for photoswitching logic and in situ memory C Liu, H Chen, X Hou, H Zhang, J Han, YG Jiang, X Zeng, DW Zhang, ... Nature nanotechnology 14 (7), 662-667, 2019 | 205 | 2019 |
Ultrafast non-volatile flash memory based on van der Waals heterostructures L Liu, C Liu, L Jiang, J Li, Y Ding, S Wang, YG Jiang, YB Sun, J Wang, ... Nature nanotechnology 16 (8), 874-881, 2021 | 181 | 2021 |
Logic gates based on neuristors made from two-dimensional materials H Chen, X Xue, C Liu, J Fang, Z Wang, J Wang, DW Zhang, W Hu, P Zhou Nature Electronics 4 (6), 399-404, 2021 | 127 | 2021 |
2D semiconductors for specific electronic applications: from device to system X Huang, C Liu, P Zhou npj 2D Materials and Applications 6 (1), 51, 2022 | 106 | 2022 |
Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels X Wang, C Liu, Y Chen, G Wu, X Yan, H Huang, P Wang, B Tian, Z Hong, ... 2D Materials 4 (2), 025036, 2017 | 106 | 2017 |
A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current Z Tang, C Liu, X Huang, S Zeng, L Liu, J Li, YG Jiang, DW Zhang, P Zhou Nano letters 21 (4), 1758-1764, 2021 | 101 | 2021 |
Electronics based on two-dimensional materials: Status and outlook S Zeng, Z Tang, C Liu, P Zhou Nano Research 14, 1752-1767, 2021 | 89 | 2021 |
Time‐tailoring van der Waals heterostructures for human memory system programming H Chen, C Liu, Z Wu, Y He, Z Wang, H Zhang, Q Wan, W Hu, DW Zhang, ... Advanced Science 6 (20), 1901072, 2019 | 89 | 2019 |
Controllable doping in 2D layered materials Z Wang, H Xia, P Wang, X Zhou, C Liu, Q Zhang, F Wang, M Huang, ... Advanced Materials 33 (48), 2104942, 2021 | 81 | 2021 |
A logic‐memory transistor with the integration of visible information sensing‐memory‐processing X Hou, C Liu, Y Ding, L Liu, S Wang, P Zhou Advanced Science 7 (21), 2002072, 2020 | 67 | 2020 |
Symmetric ultrafast writing and erasing speeds in quasi‐nonvolatile memory via van der Waals heterostructures J Li, L Liu, X Chen, C Liu, J Wang, W Hu, DW Zhang, P Zhou Advanced Materials 31 (11), 1808035, 2019 | 62 | 2019 |
In-memory computing to break the memory wall X Huang, C Liu, YG Jiang, P Zhou Chinese Physics B 29 (7), 078504, 2020 | 56 | 2020 |
Charge‐Trap Memory Based on Hybrid 0D Quantum Dot–2D WSe2 Structure X Hou, H Zhang, C Liu, S Ding, W Bao, DW Zhang, P Zhou Small 14 (20), 1800319, 2018 | 51 | 2018 |
Eliminating Overerase Behavior by Designing Energy Band in High‐Speed Charge‐Trap Memory Based on WSe2 C Liu, X Yan, J Wang, S Ding, P Zhou, DW Zhang Small 13 (17), 1604128, 2017 | 51 | 2017 |
An ultrafast bipolar flash memory for self-activated in-memory computing X Huang, C Liu, Z Tang, S Zeng, S Wang, P Zhou Nature nanotechnology 18 (5), 486-492, 2023 | 46 | 2023 |
An application-specific image processing array based on WSe2 transistors with electrically switchable logic functions S Zeng, C Liu, X Huang, Z Tang, L Liu, P Zhou Nature Communications 13 (1), 56, 2022 | 37 | 2022 |