| A new spin on magnetic memories AD Kent, DC Worledge Nature nanotechnology 10 (3), 187-191, 2015 | 936 | 2015 |
| Spin torque switching of perpendicular Ta∣ CoFeB∣ MgO-based magnetic tunnel junctions DC Worledge, G Hu, DW Abraham, JZ Sun, PL Trouilloud, J Nowak, ... Applied physics letters 98 (2), 2011 | 845 | 2011 |
| Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy M Gajek, JJ Nowak, JZ Sun, PL Trouilloud, EJ O’Sullivan, DW Abraham, ... Applied Physics Letters 100 (13), 2012 | 358 | 2012 |
| Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling DC Worledge, PL Trouilloud Applied Physics Letters 83 (1), 84-86, 2003 | 301 | 2003 |
| Anneal‐tunable Curie temperature and transport of La0.67Ca0.33MnO3 DC Worledge, GJ Snyder, MR Beasley, TH Geballe, R Hiskes, S DiCarolis Journal of applied physics 80 (9), 5158-5161, 1996 | 223 | 1996 |
| Effect of subvolume excitation and spin-torque efficiency on magnetic switching JZ Sun, RP Robertazzi, J Nowak, PL Trouilloud, G Hu, DW Abraham, ... Physical Review B—Condensed Matter and Materials Physics 84 (6), 064413, 2011 | 201 | 2011 |
| Dependence of voltage and size on write error rates in spin-transfer torque magnetic random-access memory JJ Nowak, RP Robertazzi, JZ Sun, G Hu, JH Park, JH Lee, AJ Annunziata, ... IEEE Magnetics Letters 7, 1-4, 2016 | 173 | 2016 |
| Negative Spin-Polarization of DC Worledge, TH Geballe Physical review letters 85 (24), 5182, 2000 | 165 | 2000 |
| A study of write margin of spin torque transfer magnetic random access memory technology T Min, Q Chen, R Beach, G Jan, C Horng, W Kula, T Torng, R Tong, ... IEEE Transactions on Magnetics 46 (6), 2322-2327, 2010 | 163 | 2010 |
| Spin flop switching for magnetic random access memory DC Worledge Applied Physics Letters 84 (22), 4559-4561, 2004 | 161 | 2004 |
| Single-domain model for toggle MRAM DC Worledge IBM journal of research and development 50 (1), 69-79, 2006 | 125 | 2006 |
| Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions JZ Sun, SL Brown, W Chen, EA Delenia, MC Gaidis, J Harms, G Hu, ... Physical Review B—Condensed Matter and Materials Physics 88 (10), 104426, 2013 | 122 | 2013 |
| Impact of Ta diffusion on the perpendicular magnetic anisotropy of Ta/CoFeB/MgO N Miyakawa, DC Worledge, K Kita IEEE Magnetics Letters 4, 1000104-1000104, 2013 | 117 | 2013 |
| Spin-polarized tunneling in DC Worledge, TH Geballe Applied Physics Letters 76 (7), 900-902, 2000 | 114 | 2000 |
| On-site Coulomb repulsion in the small polaron system DC Worledge, L Miéville, TH Geballe Physical Review B 57 (24), 15267, 1998 | 113 | 1998 |
| Easy axis magnetic amplifier DC Worledge US Patent 6,987,691, 2006 | 112 | 2006 |
| Magnetic phase diagram of two identical coupled nanomagnets DC Worledge Applied physics letters 84 (15), 2847-2849, 2004 | 110 | 2004 |
| Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy JJ Nowak, RP Robertazzi, JZ Sun, G Hu, DW Abraham, PL Trouilloud, ... IEEE Magnetics Letters 2, 3000204-3000204, 2011 | 107 | 2011 |
| Electric-field-control of magnetic anisotropy of Co0. 6Fe0. 2B0. 2/oxide stacks using reduced voltage K Kita, DW Abraham, MJ Gajek, DC Worledge Journal of Applied Physics 112 (3), 2012 | 103 | 2012 |
| STT-MRAM with double magnetic tunnel junctions G Hu, JH Lee, JJ Nowak, JZ Sun, J Harms, A Annunziata, S Brown, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.3. 1-26.3. 4, 2015 | 98 | 2015 |