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LONG Gen
LONG Gen
Associate Professor, Suzhou Laboratory
Verified email at szlab.ac.cn - Homepage
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Cited by
Cited by
Year
Hopping transport through defect-induced localized states in molybdenum disulphide
H Qiu, T Xu, Z Wang, W Ren, H Nan, Z Ni, Q Chen, S Yuan, F Miao, ...
Nature communications 4 (1), 2642, 2013
12002013
Achieving ultrahigh carrier mobility in two-dimensional hole gas of black phosphorus
G Long, D Maryenko, J Shen, S Xu, J Hou, Z Wu, WK Wong, T Han, J Lin, ...
Nano Letters 16 (12), 7768-7773, 2016
3142016
Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures
X Chen, Z Wu, S Xu, L Wang, R Huang, Y Han, W Ye, W Xiong, T Han, ...
Nature communications 6 (1), 6088, 2015
2322015
Persistence of Magnetism in Atomically Thin MnPS3 Crystals
G Long, H Henck, M Gibertini, D Dumcenco, Z Wang, T Taniguchi, ...
Nano letters 20 (4), 2452-2459, 2020
1742020
Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
S Xu, Z Wu, H Lu, Y Han, G Long, X Chen, T Han, W Ye, Y Wu, J Lin, ...
2D Materials 3 (2), 021007, 2016
1342016
Isolation and characterization of few-layer manganese thiophosphite
G Long, T Zhang, X Cai, J Hu, C Cho, S Xu, J Shen, Z Wu, T Han, J Lin, ...
ACS nano 11 (11), 11330-11336, 2017
1172017
Intrinsic valley Hall transport in atomically thin MoS2
Z Wu, BT Zhou, X Cai, P Cheung, GB Liu, M Huang, J Lin, T Han, L An, ...
Nature communications 10 (1), 611, 2019
1132019
Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides
Z Wu, S Xu, H Lu, A Khamoshi, GB Liu, T Han, Y Wu, J Lin, G Long, Y He, ...
Nature communications 7 (1), 12955, 2016
1132016
Twin Defect Derived Growth of Atomically Thin MoS2 Dendrites
J Wang, X Cai, R Shi, Z Wu, W Wang, G Long, Y Tang, N Cai, W Ouyang, ...
ACS nano 12 (1), 635-643, 2018
1062018
van der Waals Epitaxial Growth of Atomically Thin Bi2Se3 and Thickness-Dependent Topological Phase Transition
S Xu, Y Han, X Chen, Z Wu, L Wang, T Han, W Ye, H Lu, G Long, Y Wu, ...
Nano letters 15 (4), 2645-2651, 2015
692015
Odd-Integer Quantum Hall States and Giant Spin Susceptibility in -Type Few-Layer
S Xu, J Shen, G Long, Z Wu, Z Bao, CC Liu, X Xiao, T Han, J Lin, Y Wu, ...
Physical Review Letters 118 (6), 067702, 2017
622017
The roles of graphene and its derivatives in perovskite solar cells: A review
K Gong, J Hu, N Cui, Y Xue, L Li, G Long, S Lin
Materials & Design 211, 110170, 2021
452021
Determining Interaction Enhanced Valley Susceptibility in Spin-Valley-Locked MoS2
J Lin, T Han, BA Piot, Z Wu, S Xu, G Long, L An, P Cheung, PP Zheng, ...
Nano letters 19 (3), 1736-1742, 2019
442019
Detection of interlayer interaction in few-layer graphene
Z Wu, Y Han, J Lin, W Zhu, M He, S Xu, X Chen, H Lu, W Ye, T Han, Y Wu, ...
Physical Review B 92 (7), 075408, 2015
312015
Ambipolar quantum transport in few-layer black phosphorus
G Long, D Maryenko, S Pezzini, S Xu, Z Wu, T Han, J Lin, C Cheng, Y Cai, ...
Physical Review B 96 (15), 155448, 2017
302017
A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment
Z Wu, Y Guo, Y Guo, R Huang, S Xu, J Song, H Lu, Z Lin, Y Han, H Li, ...
Nanoscale 8 (5), 2594-2600, 2016
262016
Type-controlled nanodevices based on encapsulated few-layer black phosphorus for quantum transport
G Long, S Xu, J Shen, J Hou, Z Wu, T Han, J Lin, WK Wong, Y Cai, R Lortz, ...
2D Materials 3 (3), 031001, 2016
222016
Probing the electronic states and impurity effects in black phosphorus vertical heterostructures
X Chen, L Wang, Y Wu, H Gao, Y Wu, G Qin, Z Wu, Y Han, S Xu, T Han, ...
2D Materials 3 (1), 015012, 2016
192016
Chemical Vapor Deposition of 4 Inch Wafer-Scale Monolayer MoSe2
GZ Jiawei Li, Shuopei Wang, Lu Li, Zheng Wei, Qinqin Wang, Huacong Sun ...
Small science 2200062, 2022
172022
Investigation of the two-gap superconductivity in a few-layer -graphene heterojunction
T Han, J Shen, NFQ Yuan, J Lin, Z Wu, Y Wu, S Xu, L An, G Long, Y Wang, ...
Physical Review B 97 (6), 060505, 2018
172018
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