| Phase change memory HSP Wong, S Raoux, SB Kim, J Liang, JP Reifenberg, B Rajendran, ... Proceedings of the IEEE 98 (12), 2201-2227, 2010 | 2274 | 2010 |
| Neuromorphic computing using non-volatile memory GW Burr, RM Shelby, A Sebastian, S Kim, S Kim, S Sidler, K Virwani, ... Advances in Physics: X 2 (1), 89-124, 2017 | 1280 | 2017 |
| Recent Progress in Phase-Change Memory Technology GW Burr, MJ Brightsky, A Sebastian, HY Cheng, JY Wu, S Kim, NE Sosa, ... IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016 | 429 | 2016 |
| Tutorial: Brain-inspired computing using phase-change memory devices A Sebastian, M Le Gallo, GW Burr, S Kim, M BrightSky, E Eleftheriou Journal of Applied Physics 124 (11), 111101, 2018 | 296 | 2018 |
| Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array SB Eryilmaz, D Kuzum, R Jeyasingh, SB Kim, M BrightSky, C Lam, ... Frontiers in Neuroscience 8, 2014 | 230 | 2014 |
| NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning S Kim, M Ishii, S Lewis, T Perri, M BrightSky, W Kim, R Jordan, GW Burr, ... 2015 IEEE International Electron Devices Meeting (IEDM), 17.1. 1-17.1. 4, 2015 | 201 | 2015 |
| Metal nitride keyhole or spacer phase change memory cell structures MJ BrightSky, S Kim, CH Lam, NE Sosa US Patent App. 10/056,546, 2018 | 168* | 2018 |
| Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films JP Reifenberg, MA Panzer, SB Kim, AM Gibby, Y Zhang, S Wong, ... Applied Physics Letters 91 (11), 111904, 2007 | 147 | 2007 |
| Thermal boundary resistance measurements for phase-change memory devices JP Reifenberg, KW Chang, MA Panzer, S Kim, JA Rowlette, M Asheghi, ... IEEE Electron Device Letters 31 (1), 56-58, 2009 | 146 | 2009 |
| Dual‐Phase All‐Inorganic Cesium Halide Perovskites for Conducting‐Bridge Memory‐Based Artificial Synapses SG Kim, Q Van Le, JS Han, H Kim, MJ Choi, SA Lee, TL Kim, SB Kim, ... Advanced Functional Materials 29 (49), 1906686, 2019 | 105 | 2019 |
| Phonon and electron transport through Ge2Sb2Te5 films and interfaces bounded by metals J Lee, E Bozorg-Grayeli, SB Kim, M Asheghi, HS Philip Wong, ... Applied Physics Letters 102 (19), 191911, 2013 | 102 | 2013 |
| Self‐healing of a confined phase change memory device with a metallic surfactant layer Y Xie, W Kim, Y Kim, S Kim, J Gonsalves, M BrightSky, C Lam, Y Zhu, ... Advanced Materials 30 (9), 1705587, 2018 | 97 | 2018 |
| Competing memristors for brain-inspired computing SJ Kim, SB Kim, HW Jang Iscience 24 (1), 101889, 2021 | 95 | 2021 |
| Scaling the MOSFET gate dielectric: From high-k to higher-k? MM Frank, SB Kim, SL Brown, J Bruley, M Copel, M Hopstaken, ... Microelectronic Engineering 86 (7-9), 1603-1608, 2009 | 91 | 2009 |
| ALD-based confined PCM with a metallic liner toward unlimited endurance W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016 | 85 | 2016 |
| Resistance and threshold switching voltage drift behavior in phase-change memory and their temperature dependence at microsecond time scales studied using a micro-thermal stage SB Kim, B Lee, M Asheghi, F Hurkx, JP Reifenberg, KE Goodson, ... IEEE Transactions on Electron Devices 58 (3), 584-592, 2011 | 80 | 2011 |
| A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTezphase change material HY Cheng, JY Wu, R Cheek, S Raoux, M BrightSky, D Garbin, S Kim, ... 2012 International Electron Devices Meeting, 31.1. 1-31.1. 4, 2012 | 67 | 2012 |
| A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer S Kim, N Sosa, M BrightSky, D Mori, W Kim, Y Zhu, K Suu, C Lam Electron Devices Meeting (IEDM), 2013 IEEE International, 30.7. 1-30.7. 4, 2013 | 62 | 2013 |
| In situ transmission electron microscopy observation of nanostructural changes in phase-change memory S Meister, SB Kim, JJ Cha, HSP Wong, Y Cui ACS nano 5 (4), 2742-2748, 2011 | 62 | 2011 |
| An integrated phase change memory cell with Ge nanowire diode for cross-point memory Y Zhang, SB Kim, JP McVittie, H Jagannathan, JB Ratchford, ... 2007 IEEE Symposium on VLSI Technology, 98-99, 2007 | 62 | 2007 |
H.-S. Philip WongProfessor of Electrical Engineering, Stanford UniversityVerified email at stanford.edu
