| Elastomeric transistor stamps: reversible probing of charge transport in organic crystals VC Sundar, J Zaumseil, V Podzorov, E Menard, RL Willett, T Someya, ... Science 303 (5664), 1644-1646, 2004 | 1952 | 2004 |
| Intrinsic charge transport on the surface of organic semiconductors V Podzorov, E Menard, A Borissov, V Kiryukhin, JA Rogers, ... Physical review letters 93 (8), 086602, 2004 | 1406 | 2004 |
| Organic single‐crystal field‐effect transistors RWI De Boer, ME Gershenson, AF Morpurgo, V Podzorov physica status solidi (a) 201 (6), 1302-1331, 2004 | 713 | 2004 |
| High-mobility field-effect transistors based on transition metal dichalcogenides V Podzorov, ME Gershenson, C Kloc, R Zeis, E Bucher Applied Physics Letters 84 (17), 3301-3303, 2004 | 709 | 2004 |
| Colloquium: Electronic transport in single-crystal organic transistors ME Gershenson, V Podzorov, AF Morpurgo Reviews of modern physics 78 (3), 973-989, 2006 | 681 | 2006 |
| Electrostatic modification of novel materials CH Ahn, A Bhattacharya, M Di Ventra, JN Eckstein, CD Frisbie, ... Reviews of Modern Physics 78 (4), 1185-1212, 2006 | 619 | 2006 |
| Field effect transistors on rubrene single crystals with parylene gate insulator V Podzorov, VM Pudalov, ME Gershenson arXiv preprint cond-mat/0210555, 2002 | 597 | 2002 |
| Single-crystal organic field effect transistors with the hole mobility V Podzorov, SE Sysoev, E Loginova, VM Pudalov, ME Gershenson Applied Physics Letters 83 (17), 3504-3506, 2003 | 554 | 2003 |
| High‐performance n‐and p‐type single‐crystal organic transistors with free‐space gate dielectrics E Menard, V Podzorov, SH Hur, A Gaur, ME Gershenson, JA Rogers Advanced materials 16 (23‐24), 2097-2101, 2004 | 545 | 2004 |
| Hall effect in the accumulation layers on the surface of organic semiconductors V Podzorov, E Menard, JA Rogers, ME Gershenson Physical review letters 95 (22), 226601, 2005 | 508 | 2005 |
| Low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers VM Pudalov, ME Gershenson, H Kojima, N Butch, EM Dizhur, ... Physical review letters 88 (19), 196404, 2002 | 302 | 2002 |
| Interaction effects and phase relaxation in disorderedsystems IL Aleiner, BL Altshuler, ME Gershenson Waves in Random Media 9 (2), 201, 1999 | 277 | 1999 |
| Ultrasensitive hot-electron nanobolometers for terahertz astrophysics J Wei, D Olaya, BS Karasik, SV Pereverzev, AV Sergeev, ME Gershenson Nature nanotechnology 3 (8), 496-500, 2008 | 261 | 2008 |
| Superconducting nanocircuits for topologically protected qubits S Gladchenko, D Olaya, E Dupont-Ferrier, B Douçot, LB Ioffe, ... Nature Physics 5 (1), 48-53, 2009 | 254 | 2009 |
| Martensitic accommodation strain and the metal-insulator transition in manganites V Podzorov, BG Kim, V Kiryukhin, ME Gershenson, SW Cheong Physical Review B 64 (14), 140406, 2001 | 240 | 2001 |
| Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers MF Calhoun, J Sanchez, D Olaya, ME Gershenson, V Podzorov Nature materials 7 (1), 84-89, 2008 | 238 | 2008 |
| Light Quasiparticles Dominate Electronic Transport<? format?> in Molecular Crystal Field-Effect Transistors ZQ Li, V Podzorov, N Sai, MC Martin, ME Gershenson, M Di Ventra, ... Physical review letters 99 (1), 016403, 2007 | 183 | 2007 |
| Quantum effects in disordered metal films BL Altshuler, AG Aronov, ME Gershenson, YV Sharvin Sov. Sci. Rev. A Phys 9, 223-354, 1987 | 173 | 1987 |
| Ultrafast carrier dynamics in pentacene, functionalized pentacene, tetracene, and rubrene single crystals O Ostroverkhova, DG Cooke, FA Hegmann, JE Anthony, V Podzorov, ... Applied physics letters 88 (16), 2006 | 159 | 2006 |
| Electron-phonon interaction in ultrathin Nb films EM Gershenzon, ME Gershenzon, GN Gol’tsman, AM Lyul’kin, ... Sov. Phys. JETP 70 (3), 505-511, 1990 | 159 | 1990 |
