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Lin Xue
Lin Xue
Senior Process Engineer, Applied Materials
Verified email at cornell.edu
Title
Cited by
Cited by
Year
Magnetic tunnel junctions with single-layer-graphene tunnel barriers
W Li, L Xue, HD Abruña, DC Ralph
Physical Review B 89 (18), 184418, 2014
882014
Systematic validation of 2x nm diameter perpendicular MTJ arrays and MgO barrier for sub-10 nm embedded STT-MRAM with practically unlimited endurance
JJ Kan, C Park, C Ching, J Ahn, L Xue, R Wang, A Kontos, S Liang, ...
2016 IEEE International Electron Devices Meeting (IEDM), 27.4. 1-27.4. 4, 2016
652016
Method of forming magnetic tunneling junctions
LX Mahendra Pakala, Mihaela Balseanu, Jonathan Germain, Jaesoo Ahn
US Patent 9,564,582, 2017
63*2017
Hard mask for patterning magnetic tunnel junctions
XUE Lin, M Pakala, H Chen, AHN Jaesoo
US Patent App. 14/755,964, 2016
592016
Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing
M Alamdar, T Leonard, C Cui, BP Rimal, L Xue, OG Akinola, ...
Applied Physics Letters 118 (11), 2021
542021
Shape‐dependent multi‐weight magnetic artificial synapses for neuromorphic computing
T Leonard, S Liu, M Alamdar, H Jin, C Cui, OG Akinola, L Xue, TP Xiao, ...
Advanced Electronic Materials 8 (12), 2200563, 2022
532022
Systematic optimization of 1 Gbit perpendicular magnetic tunnel junction arrays for 28 nm embedded STT-MRAM and beyond
C Park, JJ Kan, C Ching, J Ahn, L Xue, R Wang, A Kontos, S Liang, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.2. 1-26.2. 4, 2015
482015
High performance perpendicular magnetic tunnel junction with Co/Ir interfacial anisotropy for embedded and standalone STT-MRAM applications
Y Huai, H Gan, Z Wang, P Xu, X Hao, BK Yen, R Malmhall, N Pakala, ...
Applied Physics Letters 112 (9), 2018
472018
Resonance measurement of nonlocal spin torque in a three-terminal magnetic device
L Xue, C Wang, YT Cui, L Liu, A Swander, JZ Sun, RA Buhrman, ...
Physical Review Letters 108 (14), 147201, 2012
292012
Process optimization of perpendicular magnetic tunnel junction arrays for last-level cache beyond 7 nm node
L Xue, C Ching, A Kontos, J Ahn, X Wang, R Whig, H Tseng, J Howarth, ...
2018 IEEE Symposium on VLSI Technology, 117-118, 2018
232018
Irradiation effects on perpendicular anisotropy spin–orbit torque magnetic tunnel junctions
M Alamdar, LJ Chang, K Jarvis, P Kotula, C Cui, R Gearba-Dolocan, Y Liu, ...
IEEE Transactions on Nuclear Science 68 (5), 665-670, 2021
222021
Network Analyzer Measurements of Spin Transfer Torques in Magnetic Tunnel Junctions
L Xue, C Wang, YT Cui, JA Katine, RA Buhrman, DC Ralph
Arxiv preprint arXiv:1204.0038, 2012
132012
Conditions for microwave amplification due to spin-torque dynamics in magnetic tunnel junctions
L Xue, C Wang, YT Cui, JA Katine, RA Buhrman, DC Ralph
Applied Physics Letters 99 (2), 2011
132011
Methods for forming structures with desired crystallinity for MRAM applications
XUE Lin, AHN Jaesoo, M Pakala, CH Ching, R Wang
US Patent 11,245,069, 2022
122022
Temperature dependence of critical device parameters in 1 Gb perpendicular magnetic tunnel junction arrays for STT-MRAM
C Park, JJ Kan, C Ching, J Ahn, L Xue, R Wang, A Kontos, S Liang, ...
IEEE Transactions on Magnetics 53 (2), 1-4, 2016
122016
Scalability of magnetic tunnel junctions patterned by a novel plasma ribbon beam etching process on 300 mm wafers
L Xue, A Kontos, C Lazik, S Liang, M Pakala
IEEE Transactions on Magnetics 51 (12), 1-3, 2015
122015
A self-aligned two-step reactive ion etching process for nanopatterning magnetic tunnel junctions on 300 mm wafers
L Xue, L Nistor, J Ahn, J Germain, C Ching, M Balseanu, C Trinh, H Chen, ...
IEEE Transactions on Magnetics 50 (11), 1-3, 2014
102014
Spin-orbit torque MRAM structure and manufacture thereof
M Yu, W Wang, AHN Jaesoo, JM Kim, S Patel, XUE Lin, C Park, M Pakala, ...
US Patent 11,723,283, 2023
72023
Methods for forming structures with desired crystallinity for MRAM applications
XUE Lin, AHN Jaesoo, M Pakala, CH Ching, R Wang
US Patent 11,133,460, 2021
62021
Magnetic tunnel junction structures and methods of manufacture thereof
XUE Lin, CH Ching, R Wang, M Pakala
US Patent 10,944,050, 2021
62021
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