| A CMOS silicon spin qubit R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ... Nature communications 7 (1), 13575, 2016 | 648 | 2016 |
| Ballistic interferences in suspended graphene P Rickhaus, R Maurand, MH Liu, M Weiss, K Richter, C Schönenberger Nature communications 4 (1), 2342, 2013 | 230 | 2013 |
| Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon A Crippa, R Ezzouch, A Aprá, A Amisse, R Lavieville, L Hutin, B Bertrand, ... Nature communications 10 (1), 2776, 2019 | 151 | 2019 |
| Gate-based high fidelity spin readout in a CMOS device M Urdampilleta, DJ Niegemann, E Chanrion, B Jadot, C Spence, ... Nature nanotechnology 14 (8), 737-741, 2019 | 150 | 2019 |
| Electrical Spin Driving by -Matrix Modulation in Spin-Orbit Qubits A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ... Physical review letters 120 (13), 137702, 2018 | 146 | 2018 |
| Snake trajectories in ultraclean graphene p–n junctions P Rickhaus, P Makk, MH Liu, E Tóvári, M Weiss, R Maurand, K Richter, ... Nature communications 6 (1), 6470, 2015 | 136 | 2015 |
| Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET B Voisin, R Maurand, S Barraud, M Vinet, X Jehl, M Sanquer, J Renard, ... Nano letters 16 (1), 88-92, 2016 | 115 | 2016 |
| Nonlocal spectroscopy of Andreev bound states J Schindele, A Baumgartner, R Maurand, M Weiss, C Schönenberger Physical Review B 89 (4), 045422, 2014 | 115 | 2014 |
| First-Order Quantum Phase Transition in the Kondo Regime <?format ?>of a Superconducting Carbon-Nanotube Quantum Dot R Maurand, T Meng, E Bonet, S Florens, L Marty, W Wernsdorfer Physical Review X 2 (1), 011009, 2012 | 115 | 2012 |
| Scalable tight-binding model for graphene MH Liu, P Rickhaus, P Makk, E Tóvári, R Maurand, F Tkatschenko, ... Physical review letters 114 (3), 036601, 2015 | 113 | 2015 |
| Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ... npj quantum information 4 (1), 6, 2018 | 111 | 2018 |
| Guiding of electrons in a few-mode ballistic graphene channel P Rickhaus, MH Liu, P Makk, R Maurand, S Hess, S Zihlmann, M Weiss, ... Nano letters 15 (9), 5819-5825, 2015 | 92 | 2015 |
| 19.2 A 110mK 295µW 28nm FDSOI CMOS quantum integrated circuit with a 2.8 GHz excitation and nA current sensing of an on-chip double quantum dot L Le Guevel, G Billiot, X Jehl, S De Franceschi, M Zurita, Y Thonnart, ... 2020 IEEE International Solid-State Circuits Conference-(ISSCC), 306-308, 2020 | 85 | 2020 |
| A single hole spin with enhanced coherence in natural silicon N Piot, B Brun, V Schmitt, S Zihlmann, VP Michal, A Apra, ... Nature Nanotechnology 17 (10), 1072-1077, 2022 | 84 | 2022 |
| Germanium quantum-well Josephson field-effect transistors and interferometers F Vigneau, R Mizokuchi, DC Zanuz, X Huang, S Tan, R Maurand, S Frolov, ... Nano letters 19 (2), 1023-1027, 2019 | 79 | 2019 |
| Charge detection in an array of CMOS quantum dots E Chanrion, DJ Niegemann, B Bertrand, C Spence, B Jadot, J Li, ... Physical Review Applied 14 (2), 024066, 2020 | 76 | 2020 |
| Strong coupling between a photon and a hole spin in silicon CX Yu, S Zihlmann, JC Abadillo-Uriel, VP Michal, N Rambal, ... Nature Nanotechnology 18 (7), 741-746, 2023 | 74 | 2023 |
| Large-scale fabrication of BN tunnel barriers for graphene spintronics W Fu, P Makk, R Maurand, M Bräuninger, C Schönenberger Journal of applied physics 116 (7), 2014 | 64 | 2014 |
| Variability evaluation of 28nm FD-SOI technology at cryogenic temperatures down to 100mK for quantum computing BC Paz, L Le Guevel, M Casse, G Billiot, G Pillonnet, AGM Jansen, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 53 | 2020 |
| SOI technology for quantum information processing S De Franceschi, L Hutin, R Maurand, L Bourdet, H Bohuslavskyi, ... 2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2016 | 52 | 2016 |