Articles with public access mandates - Maud VinetLearn more
Not available anywhere: 44
Variability evaluation of 28nm FD-SOI technology at cryogenic temperatures down to 100mK for quantum computing
BC Paz, L Le Guevel, M Casse, G Billiot, G Pillonnet, AGM Jansen, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
Mandates: European Commission
28nm FDSOI CMOS technology (FEOL and BEOL) thermal stability for 3D sequential integration: Yield and reliability analysis
C Cavalcante, C Fenouillet-Beranger, P Batude, X Garros, X Federspiel, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
Mandates: European Commission
Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K
M Cassé, B Cardoso Paz, G Ghibaudo, T Poiroux, E Vincent, P Galy, ...
Applied Physics Letters 116 (24), 2020
Mandates: European Commission
First demonstration of 3D SRAM through 3D monolithic integration of InGaAs n-FinFETs on FDSOI Si CMOS with inter-layer contacts
V Deshpande, H Hahn, E O'Connor, Y Baumgartner, M Sousa, D Caimi, ...
2017 Symposium on VLSI Technology, T74-T75, 2017
Mandates: European Commission
New challenges and opportunities for 3D integrations
J Michailos, P Coudrain, A Farcy, N Hotellier, S Cheramy, S Lhostis, ...
2015 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2015
Mandates: European Commission
Cryogenic operation of thin-film FDSOI nMOS transistors: The effect of back bias on drain current and transconductance
M Cassé, BC Paz, G Ghibaudo, T Poiroux, S Barraud, M Vinet, ...
IEEE Transactions on Electron Devices 67 (11), 4636-4640, 2020
Mandates: European Commission
Demonstration of 3-D SRAM cell by 3-D monolithic integration of InGaAs n-FinFETs on FDSOI CMOS with interlayer contacts
V Deshpande, H Hahn, E O’Connor, Y Baumgartner, D Caimi, M Sousa, ...
IEEE Transactions on Electron Devices 64 (11), 4503-4509, 2017
Mandates: European Commission
Integrated variability measurements of 28 nm FDSOI MOSFETs down to 4.2 K for cryogenic CMOS applications
BC Paz, L Le Guevel, M Cassé, G Billiot, G Pillonnet, A Jansen, ...
2020 IEEE 33rd International Conference on Microelectronic Test Structures …, 2020
Mandates: European Commission
FDSOI for cryoCMOS electronics: device characterization towards compact model
M Cassé, BC Paz, F Bergamaschi, G Ghibaudo, F Serra, G Billiot, ...
2022 International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2022
Mandates: European Commission
Parametric amplifiers based on quantum dots
L Cochrane, T Lundberg, DJ Ibberson, LA Ibberson, L Hutin, B Bertrand, ...
Physical Review Letters 128 (19), 197701, 2022
Mandates: UK Engineering and Physical Sciences Research Council, UK Medical Research …
Electrostatics and channel coupling on 28 nm FD-SOIfor cryogenic applications
BC Paz, M Cassé, S Haendler, A Juge, E Vincent, P Galy, F Arnaud, ...
2020 Joint International EUROSOI Workshop and International Conference on …, 2020
Mandates: European Commission
Analysis of the gate-induced drain leakage of SOI nanowire and nanosheet MOS transistors at high temperatures
M de Souza, A Cerdeira, M Estrada, S Barraud, M Cassé, M Vinet, ...
2022 IEEE Latin American Electron Devices Conference (LAEDC), 1-4, 2022
Mandates: Fundação de Amparo à Pesquisa do Estado de São Paulo
Poisson-Schrödinger simulation of inversion charge in FDSOI MOSFET down to 0K-Towards compact modeling for cryo CMOS application
M Aouad, S Martinie, F Triozon, T Poiroux, M Vinet, G Ghibaudo
2020 Joint International EUROSOI Workshop and International Conference on …, 2020
Mandates: European Commission
Detecting unintended Schottky junctions and their impact on tunnel FET characteristics
L Hutin, C Le Royer, RP Oeflein, S Martinie, J Borrel, V Delaye, ...
IEEE Transactions on Electron Devices 63 (6), 2577-2582, 2016
Mandates: US National Science Foundation
Electrical and morphological characterizations of 3-D interconnections for quantum computation
C Thomas, J Charbonnier, A Garnier, N Bresson, D Bouchu, S Moreau, ...
IEEE Transactions on Components, Packaging and Manufacturing Technology 12 …, 2021
Mandates: European Commission
Challenges and perspectives in the modeling of spin qubits
YM Niquet, L Hutin, BM Diaz, B Venitucci, J Li, V Michal, ...
2020 IEEE International Electron Devices Meeting (IEDM), 30.1. 1-30.1. 4, 2020
Mandates: European Commission, Agence Nationale de la Recherche
Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K
G Mariniello, S Barraud, M Vinet, M Cassé, O Faynot, J Calcade, ...
Solid-State Electronics 194, 108337, 2022
Mandates: Fundação de Amparo à Pesquisa do Estado de São Paulo
A new series resistance extraction method for junctionless nanowire transistors
R Trevisoli, RT Doria, M de Souza, S Barraud, M Vinet, MA Pavanello
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2016
Mandates: European Commission
3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixel
T Mota-Frutuoso, V Lapras, L Brunet, L Basset, J Lugo, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
Mandates: European Commission
The coupled atom transistor
X Jehl, B Voisin, B Roche, E Dupont-Ferrier, S De Franceschi, M Sanquer, ...
Journal of Physics: Condensed Matter 27 (15), 154206, 2015
Mandates: European Commission
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