| Near-unity photoluminescence quantum yield in MoS2 M Amani, DH Lien, D Kiriya, J Xiao, A Azcatl, J Noh, SR Madhvapathy, ... Science 350 (6264), 1065-1068, 2015 | 917 | 2015 |
| Defect-Dominated Doping and Contact Resistance in MoS2 S McDonnell, R Addou, C Buie, RM Wallace, CL Hinkle ACS nano 8 (3), 2880-2888, 2014 | 901 | 2014 |
| E. áYablonovitch, A. áJavey M á Amani, DH á Lien, D á Kiriya, J á Xiao, A á Azcatl, J á Noh, ... Science 350, 1065, 2015 | 487 | 2015 |
| Manganese Doping of Monolayer MoS2: The Substrate Is Critical K Zhang, S Feng, J Wang, A Azcatl, N Lu, R Addou, N Wang, C Zhou, ... Nano letters 15 (10), 6586-6591, 2015 | 461 | 2015 |
| Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ... Nature communications 6 (1), 7311, 2015 | 454 | 2015 |
| Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ... Nano letters 16 (9), 5437-5443, 2016 | 420 | 2016 |
| Surface Defects on Natural MoS2 R Addou, L Colombo, RM Wallace ACS applied materials & interfaces 7 (22), 11921-11929, 2015 | 415 | 2015 |
| Impact of intrinsic atomic defects on the electronic structure of MoS2 monolayers KC Santosh, RC Longo, R Addou, RM Wallace, K Cho Nanotechnology 25 (37), 375703, 2014 | 362 | 2014 |
| Recombination kinetics and effects of superacid treatment in sulfur-and selenium-based transition metal dichalcogenides M Amani, P Taheri, R Addou, GH Ahn, D Kiriya, DH Lien, JW Ager III, ... Nano letters 16 (4), 2786-2791, 2016 | 315 | 2016 |
| Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces R Addou, S McDonnell, D Barrera, Z Guo, A Azcatl, J Wang, H Zhu, ... ACS nano 9 (9), 9124-9133, 2015 | 307 | 2015 |
| Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping K Zhang, BM Bersch, J Joshi, R Addou, CR Cormier, C Zhang, K Xu, ... Advanced Functional Materials 28 (16), 1706950, 2018 | 249 | 2018 |
| HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ... ACS nano 9 (1), 474-480, 2015 | 246 | 2015 |
| Monolayer graphene growth on Ni (111) by low temperature chemical vapor deposition R Addou, A Dahal, P Sutter, M Batzill Applied Physics Letters 100 (2), 2012 | 243 | 2012 |
| Realizing large-scale, electronic-grade two-dimensional semiconductors YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ... ACS nano 12 (2), 965-975, 2018 | 238 | 2018 |
| MoS2 functionalization for ultra-thin atomic layer deposited dielectrics A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ... Applied Physics Letters 104 (11), 2014 | 235 | 2014 |
| Hole contacts on transition metal dichalcogenides: Interface chemistry and band alignments S McDonnell, A Azcatl, R Addou, C Gong, C Battaglia, S Chuang, K Cho, ... ACS nano 8 (6), 6265-6272, 2014 | 221 | 2014 |
| Direct Observation of Interlayer Hybridization and Dirac Relativistic Carriers in Graphene/MoS2 van der Waals Heterostructures H Coy Diaz, J Avila, C Chen, R Addou, MC Asensio, M Batzill Nano letters 15 (2), 1135-1140, 2015 | 200 | 2015 |
| Atomically thin heterostructures based on single-layer tungsten diselenide and graphene YC Lin, CYS Chang, RK Ghosh, J Li, H Zhu, R Addou, B Diaconescu, ... Nano letters 14 (12), 6936-6941, 2014 | 190 | 2014 |
| Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance CM Smyth, R Addou, S McDonnell, CL Hinkle, RM Wallace The Journal of Physical Chemistry C 120 (27), 14719-14729, 2016 | 164 | 2016 |
| Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing H Zhu, Q Wang, L Cheng, R Addou, J Kim, MJ Kim, RM Wallace Acs Nano 11 (11), 11005-11014, 2017 | 156 | 2017 |
Robert M. WallaceUniversity of Texas at DallasVerified email at utdallas.edu