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Rajesh Saha
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Temperature effect on RF/analog and linearity parameters in DMG FinFET
R Saha, B Bhowmick, S Baishya
Applied Physics A 124, 1-10, 2018
902018
Sensitivity analysis on dielectric modulated Ge-source DMDG TFET based label-free biosensor
R Saha, Y Hirpara, S Hoque
IEEE Transactions on Nanotechnology 20, 552-560, 2021
482021
Statistical dependence of gate metal work function on various electrical parameters for an n-channel Si step-FinFET
R Saha, B Bhowmick, S Baishya
IEEE Transactions on Electron Devices 64 (3), 969-976, 2017
382017
Methods to reduce ambipolar current of various TFET structures: a review
S Tiwari, R Saha
Silicon 14 (12), 6507-6515, 2022
342022
Simulation study on ferroelectric layer thickness dependence RF/Analog and linearity parameters in ferroelectric tunnel junction TFET
R Saha
Microelectronics Journal 113, 105081, 2021
342021
3D analytical modeling of surface potential, threshold voltage, and subthreshold swing in dual-material-gate (DMG) SOI FinFETs
R Saha, S Baishya, B Bhowmick
Journal of Computational Electronics 17, 153-162, 2018
322018
Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
International Journal of RF and Microwave Computer‐Aided Engineering 31 (4 …, 2021
302021
Dependence of RF/analog and linearity figure of merits on temperature in ferroelectric FinFET: a simulation study
R Saha, R Goswami, B Bhowmick, S Baishya
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 67 …, 2020
302020
Deep insight into DC, RF/analog, and digital inverter performance due to variation in straggle parameter for gate modulated TFET
R Saha, K Vanlalawmpuia, B Bhowmick, S Baishya
Materials Science in Semiconductor Processing 91, 102-107, 2019
262019
Si and Ge step-FinFETs: Work function variability, optimization and electrical parameters
R Saha, B Bhowmick, S Baishya
Superlattices and Microstructures 107, 5-16, 2017
252017
DC and RF/analog performances of split source horizontal pocket and hetero stack TFETs considering interface trap charges: a simulation study
S Tiwari, R Saha
Microelectronics Reliability 137, 114780, 2022
242022
Analytical modelling for surface potential of dual material gate overlapped-on-drain TFET (DM-DMG-TFET) for label-free biosensing application
NN Reddy, DK Panda, R Saha
AEU-International Journal of Electronics and Communications 151, 154225, 2022
232022
Analysis on DC and RF/analog performance in multifin-FinFET for wide variation in work function of metal gate
Y Hirpara, R Saha
Silicon 13 (1), 73-77, 2021
232021
DC and RF/analog parameters in Ge‐source split drain‐ZHP‐TFET: drain and pocket engineering technique
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2022
192022
Impact of WFV on electrical parameters due to high-k/metal gate in SiGe channel tunnel FET
R Saha, B Bhowmick, S Baishya
Microelectronic Engineering 214, 1-4, 2019
182019
Improved optical performance in near visible light detection photosensor based on TFET
S Tiwari, R Saha
Microelectronics Journal 129, 105554, 2022
172022
Performance evaluation of hetero-stacked TFET for variation in lateral straggle and its application as digital inverter
K Vanlalawmpuia, R Saha, B Bhowmick
Applied Physics A 124 (10), 701, 2018
172018
Analysis on electrical parameters including temperature and interface trap charges in gate overlap Ge source step shape double gate TFET
R Saha, R Goswami, DK Panda
Microelectronics Journal 130, 105629, 2022
162022
Impact of lateral straggle on linearity performance in gate-modulated (GM) TFET
R Saha, B Bhowmick, S Baishya
Applied Physics A 126, 1-5, 2020
152020
Effect of gate dielectric on electrical parameters due to metal gate WFV in n‐channel Si step FinFET
R Saha, B Bhowmick, S Baishya
Micro & Nano Letters 13 (7), 1007-1010, 2018
152018
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