| Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ... Nano letters 16 (9), 5437-5443, 2016 | 419 | 2016 |
| Metal Contacts on Physical Vapor Deposited Monolayer MoS2 C Gong, C Huang, J Miller, L Cheng, Y Hao, D Cobden, J Kim, RS Ruoff, ... ACS nano 7 (12), 11350-11357, 2013 | 351 | 2013 |
| HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ... ACS nano 9 (1), 474-480, 2015 | 244 | 2015 |
| Remote Plasma Oxidation and Atomic Layer Etching of MoS2 H Zhu, X Qin, L Cheng, A Azcatl, J Kim, RM Wallace ACS Applied Materials & Interfaces 8 (29), 19119-19126, 2016 | 185 | 2016 |
| Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing H Zhu, Q Wang, L Cheng, R Addou, J Kim, MJ Kim, RM Wallace Acs Nano 11 (11), 11005-11014, 2017 | 156 | 2017 |
| Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides R Yue, Y Nie, LA Walsh, R Addou, C Liang, N Lu, AT Barton, H Zhu, ... 2D Materials 4 (4), 045019, 2017 | 151 | 2017 |
| Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone L Cheng, X Qin, AT Lucero, A Azcatl, J Huang, RM Wallace, K Cho, J Kim ACS applied materials & interfaces 6 (15), 11834-11838, 2014 | 142 | 2014 |
| Atomic layer deposition of silicon nitride thin films: a review of recent progress, challenges, and outlooks X Meng, YC Byun, HS Kim, JS Lee, AT Lucero, L Cheng, J Kim Materials 9 (12), 1007, 2016 | 135 | 2016 |
| High‐mobility helical tellurium field‐effect transistors enabled by transfer‐free, low‐temperature direct growth G Zhou, R Addou, Q Wang, S Honari, CR Cormier, L Cheng, R Yue, ... Advanced Materials 30 (36), 1803109, 2018 | 124 | 2018 |
| Partially fluorinated graphene: structural and electrical characterization L Cheng, S Jandhyala, G Mordi, AT Lucero, J Huang, A Azcatl, R Addou, ... ACS Applied Materials & Interfaces 8 (7), 5002-5008, 2016 | 101 | 2016 |
| Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study H Zhu, S McDonnell, X Qin, A Azcatl, L Cheng, R Addou, J Kim, PD Ye, ... ACS applied materials & interfaces 7 (23), 13038-13043, 2015 | 100 | 2015 |
| Fabrication of MoS 2 thin film transistors via selective-area solution deposition methods Y Xi, MI Serna, L Cheng, Y Gao, M Baniasadi, R Rodriguez-Davila, J Kim, ... Journal of Materials Chemistry C 3 (16), 3842-3847, 2015 | 54 | 2015 |
| Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices L Cheng, J Lee, H Zhu, AV Ravichandran, Q Wang, AT Lucero, MJ Kim, ... ACS nano 11 (10), 10243-10252, 2017 | 50 | 2017 |
| Low temperature synthesis of graphite on Ni films using inductively coupled plasma enhanced CVD L Cheng, K Yun, A Lucero, J Huang, X Meng, G Lian, HS Nam, ... Journal of Materials Chemistry C 3 (20), 5192-5198, 2015 | 48 | 2015 |
| Area-Selective ALD of TiO2 Nanolines with Electron-Beam Lithography J Huang, M Lee, A Lucero, L Cheng, J Kim The Journal of Physical Chemistry C 118 (40), 23306-23312, 2014 | 42 | 2014 |
| Combustion Synthesis of p-Type Transparent Conducting CuCrO2+x and Cu:CrOx Thin Films at 180 °C J Wang, TB Daunis, L Cheng, B Zhang, J Kim, JWP Hsu ACS applied materials & interfaces 10 (4), 3732-3738, 2018 | 41 | 2018 |
| Solution Synthesis of Few-Layer 2H MX 2 (M= Mo, W; X= S, Se) D Barrera, Q Wang, YJ Lee, L Cheng, MJ Kim, J Kim, JWP Hsu Journal of Materials Chemistry C 5 (11), 2859-2864, 2017 | 40 | 2017 |
| Composition-controlled atomic layer deposition of phase-change memories and ovonic threshold switches with high performance V Adinolfi, L Cheng, M Laudato, RC Clarke, VK Narasimhan, S Balatti, ... ACS nano 13 (9), 10440-10447, 2019 | 39 | 2019 |
| Investigation of the physical properties of plasma enhanced atomic layer deposited silicon nitride as etch stopper HS Kim, X Meng, SJ Kim, AT Lucero, L Cheng, YC Byun, JS Lee, ... ACS applied materials & interfaces 10 (51), 44825-44833, 2018 | 32 | 2018 |
| A comparative study of atomic layer deposition of Al2O3 and HfO2 on AlGaN/GaN X Qin, L Cheng, S McDonnell, A Azcatl, H Zhu, J Kim, RM Wallace Journal of Materials Science: Materials in Electronics 26, 4638-4643, 2015 | 31 | 2015 |