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Vaishno Dasika
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Design and analysis of photonic crystal coupled cavity arrays for quantum simulation
A Majumdar, A Rundquist, M Bajcsy, VD Dasika, SR Bank, J Vučković
Physical Review B—Condensed Matter and Materials Physics 86 (19), 195312, 2012
1142012
Growth and characterization of LuAs films and nanostructures
EM Krivoy, HP Nair, AM Crook, S Rahimi, SJ Maddox, R Salas, DA Ferrer, ...
Applied Physics Letters 101 (14), 2012
352012
Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation
R Salas, S Guchhait, SD Sifferman, KM McNicholas, VD Dasika, ...
Applied Physics Letters 106 (8), 2015
282015
Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation
VD Dasika, JD Song, WJ Choi, NK Cho, JI Lee, RS Goldman
Applied Physics Letters 95 (16), 2009
282009
Increased InAs quantum dot size and density using bismuth as a surfactant
VD Dasika, EM Krivoy, HP Nair, SJ Maddox, KW Park, D Jung, ML Lee, ...
Applied Physics Letters 105 (25), 2014
242014
Growth and characterization of single crystal rocksalt LaAs using LuAs barrier layers
EM Krivoy, S Rahimi, HP Nair, R Salas, SJ Maddox, DJ Ironside, Y Jiang, ...
Applied Physics Letters 101 (22), 2012
182012
Nanometer-scale studies of point defect distributions in GaMnAs alloys
JN Gleason, ME Hjelmstad, VD Dasika, RS Goldman, S Fathpour, ...
Applied Physics Letters 86 (1), 2005
172005
Nanometer-scale measurements of electronic states in InAs∕ GaAs quantum dots
VD Dasika, RS Goldman, JD Song, WJ Choi, NK Cho, JI Lee
Journal of Applied Physics 106 (1), 2009
152009
Moments-based tight-binding calculations of local electronic structure in InAs/GaAs quantum dots for comparison to experimental measurements
JQ Lu, HT Johnson, VD Dasika, RS Goldman
Applied physics letters 88 (5), 2006
132006
Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths
X Li, VD Dasika, PC Li, L Ji, SR Bank, ET Yu
Applied Physics Letters 105 (12), 2014
112014
Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs
DP Kumah, JH Wu, NS Husseini, VD Dasika, RS Goldman, Y Yacoby, ...
Applied Physics Letters 98 (2), 2011
112011
Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation
R Salas, S Guchhait, KM McNicholas, SD Sifferman, VD Dasika, D Jung, ...
Applied Physics Letters 108 (18), 2016
102016
Conductivity and structure of ErAs nanoparticles embedded in GaAs pn junctions analyzed via conductive atomic force microscopy
KW Park, VD Dasika, HP Nair, AM Crook, SR Bank, ET Yu
Applied Physics Letters 100 (23), 2012
102012
Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation
R Salas, S Guchhait, SD Sifferman, KM McNicholas, VD Dasika, D Jung, ...
APL Materials 5 (9), 2017
92017
Influence of Mn dopants on InAs/GaAs quantum dot electronic states
VD Dasika, AV Semichaevsky, JP Petropoulos, JC Dibbern, ...
Applied Physics Letters 98 (14), 2011
72011
Tunable, epitaxial, semimetallic films for plasmonics
EM Krivoy, A Vasudev, HP Nair, VD Dasika, R Synowicki, R Salas, ...
CLEO: 2013, 1-2, 2013
22013
Molecular Beam Epitaxy Growth-Space Investigation of InAsBi and InGaAsBi on InAs
SJ Maddox, HP Nair, VD Dasika, EM Krivoy, R Salas, SR Bank
International Symposium on Compound Semiconductors (ISCS), 2012
22012
InAs quantum dot growth using bismuth as a surfactant for optoelectronic applications
VD Dasika, EM Krivoy, HP Nair, SJ Maddox, KW Park, D Jung, ML Lee, ...
CLEO: Science and Innovations, CF1I. 2, 2013
12013
Methods of forming semiconductor power devices having graded lateral doping
P Steinmann, E Van Brunt, JH Park, V Dasika
US Patent 11,721,755, 2023
2023
Semiconductor power devices having graded lateral doping in the source region
P Steinmann, E Van Brunt, JH Park, V Dasika
US Patent 11,282,951, 2022
2022
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