Design and analysis of photonic crystal coupled cavity arrays for quantum simulation A Majumdar, A Rundquist, M Bajcsy, VD Dasika, SR Bank, J Vučković Physical Review B—Condensed Matter and Materials Physics 86 (19), 195312, 2012 | 114 | 2012 |
Growth and characterization of LuAs films and nanostructures EM Krivoy, HP Nair, AM Crook, S Rahimi, SJ Maddox, R Salas, DA Ferrer, ... Applied Physics Letters 101 (14), 2012 | 35 | 2012 |
Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation R Salas, S Guchhait, SD Sifferman, KM McNicholas, VD Dasika, ... Applied Physics Letters 106 (8), 2015 | 28 | 2015 |
Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation VD Dasika, JD Song, WJ Choi, NK Cho, JI Lee, RS Goldman Applied Physics Letters 95 (16), 2009 | 28 | 2009 |
Increased InAs quantum dot size and density using bismuth as a surfactant VD Dasika, EM Krivoy, HP Nair, SJ Maddox, KW Park, D Jung, ML Lee, ... Applied Physics Letters 105 (25), 2014 | 24 | 2014 |
Growth and characterization of single crystal rocksalt LaAs using LuAs barrier layers EM Krivoy, S Rahimi, HP Nair, R Salas, SJ Maddox, DJ Ironside, Y Jiang, ... Applied Physics Letters 101 (22), 2012 | 18 | 2012 |
Nanometer-scale studies of point defect distributions in GaMnAs alloys JN Gleason, ME Hjelmstad, VD Dasika, RS Goldman, S Fathpour, ... Applied Physics Letters 86 (1), 2005 | 17 | 2005 |
Nanometer-scale measurements of electronic states in InAs∕ GaAs quantum dots VD Dasika, RS Goldman, JD Song, WJ Choi, NK Cho, JI Lee Journal of Applied Physics 106 (1), 2009 | 15 | 2009 |
Moments-based tight-binding calculations of local electronic structure in InAs/GaAs quantum dots for comparison to experimental measurements JQ Lu, HT Johnson, VD Dasika, RS Goldman Applied physics letters 88 (5), 2006 | 13 | 2006 |
Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths X Li, VD Dasika, PC Li, L Ji, SR Bank, ET Yu Applied Physics Letters 105 (12), 2014 | 11 | 2014 |
Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs DP Kumah, JH Wu, NS Husseini, VD Dasika, RS Goldman, Y Yacoby, ... Applied Physics Letters 98 (2), 2011 | 11 | 2011 |
Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation R Salas, S Guchhait, KM McNicholas, SD Sifferman, VD Dasika, D Jung, ... Applied Physics Letters 108 (18), 2016 | 10 | 2016 |
Conductivity and structure of ErAs nanoparticles embedded in GaAs pn junctions analyzed via conductive atomic force microscopy KW Park, VD Dasika, HP Nair, AM Crook, SR Bank, ET Yu Applied Physics Letters 100 (23), 2012 | 10 | 2012 |
Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation R Salas, S Guchhait, SD Sifferman, KM McNicholas, VD Dasika, D Jung, ... APL Materials 5 (9), 2017 | 9 | 2017 |
Influence of Mn dopants on InAs/GaAs quantum dot electronic states VD Dasika, AV Semichaevsky, JP Petropoulos, JC Dibbern, ... Applied Physics Letters 98 (14), 2011 | 7 | 2011 |
Tunable, epitaxial, semimetallic films for plasmonics EM Krivoy, A Vasudev, HP Nair, VD Dasika, R Synowicki, R Salas, ... CLEO: 2013, 1-2, 2013 | 2 | 2013 |
Molecular Beam Epitaxy Growth-Space Investigation of InAsBi and InGaAsBi on InAs SJ Maddox, HP Nair, VD Dasika, EM Krivoy, R Salas, SR Bank International Symposium on Compound Semiconductors (ISCS), 2012 | 2 | 2012 |
InAs quantum dot growth using bismuth as a surfactant for optoelectronic applications VD Dasika, EM Krivoy, HP Nair, SJ Maddox, KW Park, D Jung, ML Lee, ... CLEO: Science and Innovations, CF1I. 2, 2013 | 1 | 2013 |
Methods of forming semiconductor power devices having graded lateral doping P Steinmann, E Van Brunt, JH Park, V Dasika US Patent 11,721,755, 2023 | | 2023 |
Semiconductor power devices having graded lateral doping in the source region P Steinmann, E Van Brunt, JH Park, V Dasika US Patent 11,282,951, 2022 | | 2022 |