| The power of myth J Campbell, B Moyers Anchor, 2011 | 6382 | 2011 |
| Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product Y Kang, HD Liu, M Morse, MJ Paniccia, M Zadka, S Litski, G Sarid, ... Nature photonics 3 (1), 59-63, 2009 | 724 | 2009 |
| Microstructured silicon photodetector Z Huang, JE Carey, M Liu, X Guo, E Mazur, JC Campbell Applied Physics Letters 89 (3), 2006 | 456 | 2006 |
| Thermal treatment studies of the photoluminescence intensity of porous silicon C Tsai, KH Li, J Sarathy, S Shih, JC Campbell, BK Hance, JM White Applied physics letters 59 (22), 2814-2816, 1991 | 412 | 1991 |
| Correlation between silicon hydride species and the photoluminescence intensity of porous silicon C Tsai, KH Li, DS Kinosky, RZ Qian, TC Hsu, JT Irby, SK Banerjee, ... Applied physics letters 60 (14), 1700-1702, 1992 | 320 | 1992 |
| Recent advances in telecommunications avalanche photodiodes JC Campbell Journal of Lightwave Technology 25 (1), 109-121, 2007 | 292 | 2007 |
| Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN JC Carrano, T Li, PA Grudowski, CJ Eiting, RD Dupuis, JC Campbell Journal of applied physics 83 (11), 6148-6160, 1998 | 290 | 1998 |
| Electrical and optical characterization of Sb: SnO2 YS He, JC Campbell, RC Murphy, MF Arendt, JS Swinnea Journal of Materials Research 8 (12), 3131-3134, 1993 | 284 | 1993 |
| High detectivity InAs quantum dot infrared photodetectors ET Kim, A Madhukar, Z Ye, JC Campbell Applied Physics Letters 84 (17), 3277-3279, 2004 | 274 | 2004 |
| High-performance avalanche photodiode with separate absorption ‘grading’and multiplication regions JC Campbell, AG Dentai, WS Holden, BL Kasper Electronics Letters 19 (20), 818-820, 1983 | 271 | 1983 |
| Recent advances in avalanche photodiodes JC Campbell, S Demiguel, F Ma, A Beck, X Guo, S Wang, X Zheng, X Li, ... IEEE Journal of selected topics in quantum electronics 10 (4), 777-787, 2004 | 250 | 2004 |
| The HgCdTe electron avalanche photodiode J Beck, C Wan, M Kinch, J Robinson, P Mitra, R Scritchfield, F Ma, ... Journal of electronic materials 35, 1166-1173, 2006 | 247 | 2006 |
| High-saturation-current modified uni-traveling-carrier photodiode with cliff layer Z Li, H Pan, H Chen, A Beling, JC Campbell IEEE Journal of Quantum Electronics 46 (5), 626-632, 2010 | 234 | 2010 |
| GaN avalanche photodiodes JC Carrano, DJH Lambert, CJ Eiting, CJ Collins, T Li, S Wang, B Yang, ... Applied Physics Letters 76 (7), 924, 2000 | 230 | 2000 |
| Recent advances in avalanche photodiodes JC Campbell Journal of Lightwave Technology 34 (2), 278-285, 2016 | 220 | 2016 |
| GaAs electro‐optic directional‐coupler switch JC Campbell, FA Blum, DW Shaw, KL Lawley Applied Physics Letters 27 (4), 202-205, 1975 | 196 | 1975 |
| Demonstration of a 320× 256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors S Krishna, D Forman, S Annamalai, P Dowd, P Varangis, T Tumolillo, ... Applied Physics Letters 86 (19), 2005 | 191 | 2005 |
| Normal incidence quantum dot infrared photodetectors with undoped active region Z Chen, O Baklenov, ET Kim, I Mukhametzhanov, J Tie, A Madhukar, Z Ye, ... Journal of Applied Physics 89 (8), 4558-4563, 2001 | 187 | 2001 |
| A new look at impact ionization-Part II: Gain and noise in short avalanche photodiodes P Yuan, KA Anselm, C Hu, H Nie, C Lenox, AL Holmes, BG Streetman, ... IEEE Transactions on Electron Devices 46 (8), 1632-1639, 1999 | 186 | 1999 |
| Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz C Lenox, H Nie, P Yuan, G Kinsey, AL Homles, BG Streetman, ... IEEE Photonics Technology Letters 11 (9), 1162-1164, 1999 | 182 | 1999 |
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