| Carbon nanotube FET technology for radio-frequency electronics: State-of-the-art overview M Schroter, M Claus, P Sakalas, M Haferlach, D Wang IEEE Journal of the Electron Devices Society 1 (1), 9-20, 2013 | 104 | 2013 |
| Towards an optimal contact metal for CNTFETs A Fediai, DA Ryndyk, G Seifert, S Mothes, M Claus, M Schröter, ... Nanoscale 8 (19), 10240-10251, 2016 | 70 | 2016 |
| Toward linearity in schottky barrier cntfets S Mothes, M Claus, M Schröter IEEE Transactions on Nanotechnology 14 (2), 372-378, 2015 | 66 | 2015 |
| COOS: A wave-function based Schrödinger–Poisson solver for ballistic nanotube transistors M Claus, S Mothes, S Blawid, M Schröter Journal of Computational Electronics 13, 689-700, 2014 | 55 | 2014 |
| High-Performance Reconfigurable Si Nanowire Field-Effect Transistor based on Simplified Device Design G Darbandy, M Claus, M Schroter IEEE Transactions on Nanotechnology 15 (2), 289-294, 2016 | 47 | 2016 |
| A semiphysical large-signal compact carbon nanotube FET model for analog RF applications M Schröter, M Haferlach, A Pacheco-Sanchez, S Mothes, P Sakalas, ... IEEE Transactions on Electron Devices 62 (1), 52-60, 2014 | 46 | 2014 |
| Review of advanced and beyond CMOS FET technologies for radio frequency circuit design F Ellinger, M Claus, M Schröter, C Carta 2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference …, 2011 | 45 | 2011 |
| CNTFET Technology for RF Applications: Review and Future Perspective M Hartmann, S Hermann, PF Marsh, C Rutherglen, D Wang, L Ding, ... IEEE Journal of Microwaves 1 (1), 275-287, 2021 | 34 | 2021 |
| Contact resistance extraction methods for short-and long-channel carbon nanotube field-effect transistors A Pacheco-Sanchez, M Claus, S Mothes, M Schröter Solid-State Electronics 125, 161-166, 2016 | 29 | 2016 |
| Electrical Characterization of Emerging Transistor Technologies: Issues and Challenges M Haferlach, A Pacheco, P Sakalas, M Alexandru, S Hermann, ... IEEE Transactions on Nanotechnology 15 (4), 619-626, 2016 | 28 | 2016 |
| Feasible Device Architectures for Ultrascaled CNTFETs A Pacheco-Sanchez, F Fuchs, S Mothes, A Zienert, J Schuster, ... IEEE Transactions on Nanotechnology 17 (1), 100-107, 2018 | 22 | 2018 |
| Analytical Model of One-Dimensional Ballistic Schottky-Barrier Transistors I Bejenari, M Schroter, M Claus arXiv preprint arXiv:1703.05092, 2017 | 21* | 2017 |
| High-Frequency Ballistic Transport Phenomena in Schottky Barrier CNTFETs M Claus, S Blawid, S Mothes, M Schroter IEEE Transactions on Electron Devices 59 (10), 2610-2618, 2012 | 20 | 2012 |
| Critical review of CNTFET compact models M Claus, D Gross, M Haferlach, M Schröter NSTI-Nanotech (Workshop on Compact modeling) 2, 770-775, 2012 | 20 | 2012 |
| Program FFlexCom—High frequency flexible bendable electronics for wireless communication systems T Meister, F Ellinger, JW Bartha, M Berroth, J Burghartz, M Claus, L Frey, ... Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 2017 …, 2017 | 19 | 2017 |
| Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors I Bejenari, M Schröter, M Claus IEEE Transactions on Electron Devices 64 (9), 3904-3911, 2017 | 18 | 2017 |
| Reconfigurable NanoFETs: Performance Projections for Multiple-Top-Gate Architectures R Moura, N Tiencken, S Mothes, M Claus, S Blawid IEEE Transactions on Nanotechnology 17 (3), 467-474, 2018 | 17 | 2018 |
| A CNTFET Oscillator at 461 MHz A Taghavi, C Carta, T Meister, F Ellinger, M Claus, M Schroter IEEE microwave and wireless components letters 27 (6), 578-580, 2017 | 17 | 2017 |
| Bias-Dependent Contact Resistance Characterization of Carbon Nanotube FETs A Pacheco-Sanchez, M Claus IEEE Transactions on Nanotechnology 19, 47-51, 2019 | 16 | 2019 |
| High frequency noise in manufacturable carbon nanotube transistors P Sakalas, M Schroter, M Bölter, M Claus, S Mothes, D Wang Noise and Fluctuations (ICNF), 2011 21st International Conference on, 372-375, 2011 | 16 | 2011 |
Michael SchröterProfessor of Electronic Devices and Integrated CircuitsVerified email at tu-dresden.de
