| Immunity to device variations in a spiking neural network with memristive nanodevices D Querlioz, O Bichler, P Dollfus, C Gamrat IEEE transactions on nanotechnology 12 (3), 288-295, 2013 | 467 | 2013 |
| Thermoelectric effects in graphene nanostructures P Dollfus, VH Nguyen, J Saint-Martin Journal of Physics: Condensed Matter 27 (13), 133204, 2015 | 215 | 2015 |
| Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons F Mazzamuto, V Hung Nguyen, Y Apertet, C Caër, C Chassat, ... Physical Review B—Condensed Matter and Materials Physics 83 (23), 235426, 2011 | 215 | 2011 |
| The Wigner Monte Carlo method for nanoelectronic devices D Querlioz, P Dollfus, M Mouis ISTE Wiley: London, UK, 2010 | 145 | 2010 |
| Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder D Querlioz, Y Apertet, A Valentin, K Huet, A Bournel, S Galdin-Retailleau, ... Applied Physics Letters 92 (4), 2008 | 142 | 2008 |
| On the ballistic transport in nanometer-scaled DG MOSFETs JS Martin, A Bournel, P Dollfus IEEE Transactions on Electron Devices 51 (7), 1148-1155, 2004 | 131 | 2004 |
| Computationally efficient physics-based compact CNTFET model for circuit design S Frégonèse, HC d'Honincthun, J Goguet, C Maneux, T Zimmer, ... IEEE Transactions on Electron Devices 55 (6), 1317-1327, 2008 | 116 | 2008 |
| Negative differential resistance in zigzag-edge graphene nanoribbon junctions V Nam Do, P Dollfus Journal of Applied Physics 107 (6), 2010 | 105 | 2010 |
| On the ability of the particle Monte Carlo technique to include quantum effects in nano-MOSFET simulation D Querlioz, J Saint-Martin, K Huet, A Bournel, V Aubry-Fortuna, C Chassat, ... IEEE transactions on electron devices 54 (9), 2232-2242, 2007 | 100 | 2007 |
| heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation P Dollfus Journal of Applied Physics 82 (8), 3911-3916, 1997 | 93 | 1997 |
| Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures V Nam Do, VH Nguyen, P Dollfus, A Bournel Journal of Applied Physics 104 (6), 2008 | 91 | 2008 |
| A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon A Abramo, L Baudry, R Brunetti, R Castagne, M Charef, F Dessenne, ... IEEE Transactions on Electron Devices 41 (9), 1646-1654, 1994 | 90 | 1994 |
| Resonant tunnelling diodes based on graphene/h-BN heterostructure VH Nguyen, F Mazzamuto, A Bournel, P Dollfus Journal of Physics D: Applied Physics 45 (32), 325104, 2012 | 89 | 2012 |
| Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation P Dollfus, A Bournel, S Galdin, S Barraud, P Hesto IEEE Transactions on Electron Devices 51 (5), 749-756, 2004 | 86 | 2004 |
| Gate-induced spin precession in an In0. 53Ga0. 47As two dimensional electron gas A Bournel, P Dollfus, P Bruno, P Hesto The European Physical Journal Applied Physics 4 (1), 1-4, 1998 | 85 | 1998 |
| Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas J Saint-Martin, A Bournel, F Monsef, C Chassat, P Dollfus Semiconductor science and technology 21 (4), L29, 2006 | 76 | 2006 |
| Controllable spin-dependent transport in armchair graphene nanoribbon structures VH Nguyen, V Nam Do, A Bournel, VL Nguyen, P Dollfus Journal of Applied Physics 106 (5), 2009 | 67 | 2009 |
| Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation J Saint-Martin, A Bournel, P Dollfus Solid-State Electronics 50 (1), 94-101, 2006 | 67 | 2006 |
| Band offset predictions for strained group IV alloys: Si1-x-yGexCy on Si (001) and Si1-xGex on Si1-zGez (001) S Galdin, P Dollfus, V Aubry-Fortuna, P Hesto, HJ Osten Semiconductor science and technology 15 (6), 565, 2000 | 67 | 2000 |
| A Klein-tunneling transistor with ballistic graphene Q Wilmart, S Berrada, D Torrin, VH Nguyen, G Fève, JM Berroir, P Dollfus, ... 2D Materials 1 (1), 011006, 2014 | 65 | 2014 |
