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Mathieu Pierre
Mathieu Pierre
Associate professor of Physics, INSA Toulouse and CNRS-LNCMI
Verified email at lncmi.cnrs.fr
Title
Cited by
Cited by
Year
Charged excitons in monolayer : Experiment and theory
E Courtade, M Semina, M Manca, MM Glazov, C Robert, F Cadiz, G Wang, ...
Physical Review B 96 (8), 085302, 2017
3092017
Single-donor ionization energies in a nanoscale CMOS channel
M Pierre, R Wacquez, X Jehl, M Sanquer, M Vinet, O Cueto
Nature nanotechnology 5 (2), 133-137, 2010
2982010
Storage and on-demand release of microwaves using superconducting resonators with tunable coupling
M Pierre, IM Svensson, S Raman Sathyamoorthy, G Johansson, ...
Applied Physics Letters 104 (23), 2014
862014
Background charges and quantum effects in quantum dots transport spectroscopy
M Pierre, M Hofheinz, X Jehl, M Sanquer, G Molas, M Vinet, S Deleonibus
The European Physical Journal B 70, 475-481, 2009
612009
Compact silicon double and triple dots realized with only two gates
M Pierre, R Wacquez, B Roche, X Jehl, M Sanquer, M Vinet, E Prati, ...
Applied physics letters 95 (24), 2009
462009
Single-dopant resonance in a single-electron transistor
VN Golovach, X Jehl, M Houzet, M Pierre, B Roche, M Sanquer, ...
Physical Review B—Condensed Matter and Materials Physics 83 (7), 075401, 2011
432011
High field magneto-transport in two-dimensional electron gas LaAlO3/SrTiO3
M Yang, K Han, O Torresin, M Pierre, S Zeng, Z Huang, TV Venkatesan, ...
Applied Physics Letters 109 (12), 2016
382016
Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect
M Yang, O Couturaud, W Desrat, C Consejo, D Kazazis, R Yakimova, ...
Physical Review Letters 117 (23), 237702, 2016
302016
Single dopant impact on electrical characteristics of SOI NMOSFETs with effective length down to 10nm
R Wacquez, M Vinet, M Pierre, B Roche, X Jehl, O Cueto, J Verduijn, ...
2010 Symposium on VLSI Technology, 193-194, 2010
272010
Pauli-limit violation in lanthanide infinite-layer nickelate superconductors
LE Chow, KY Yip, M Pierre, SW Zeng, ZT Zhang, T Heil, J Deuschle, ...
arXiv preprint arXiv:2204.12606, 2022
222022
Microwave photon generation in a doubly tunable superconducting resonator
IM Svensson, M Pierre, M Simoen, W Wustmann, P Krantz, A Bengtsson, ...
Journal of Physics: Conference Series 969 (1), 012146, 2018
222018
Application of negative differential conductance in Al/AlOx single-electron transistors for background charge characterization
HC George, M Pierre, X Jehl, AO Orlov, M Sanquer, GL Snider
Applied physics letters 96 (4), 2010
202010
Resonant and off-resonant microwave signal manipulation in coupled superconducting resonators
M Pierre, SR Sathyamoorthy, IM Svensson, G Johansson, P Delsing
Physical Review B 99 (9), 094518, 2019
152019
Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire
M Pierre, B Roche, R Wacquez, X Jehl, M Sanquer, M Vinet
Journal of Applied Physics 109 (8), 2011
102011
Transport mono-électronique et détection de dopants uniques dans des transistors silicium
M Pierre
Université de Grenoble, 2010
82010
Dimensionality control and rotational symmetry breaking superconductivity in square-planar layered nickelates
LE Chow, K Rubi, KY Yip, M Pierre, M Leroux, X Liu, Z Luo, S Zeng, C Li, ...
arXiv preprint arXiv:2301.07606, 2023
72023
Patterning strategy for monoelectronic device platform in a complementary metal oxide semiconductor technology
S Pauliac-Vaujour, R Wacquez, C Vizioz, T Chevolleau, M Pierre, ...
Japanese Journal of Applied Physics 50 (6S), 06GF15, 2011
52011
Magnetic and electric field dependent charge transfer in perovskite/graphene field effect transistors
ND Cottam, JS Austin, C Zhang, A Patanè, W Escoffier, M Goiran, ...
Advanced Electronic Materials 9 (2), 2200995, 2023
42023
FDSOI nanowires: An opportunity for hybrid circuit with field effect and single electron transistors
M Vinet, V Deshpande, X Jehl, R Wacquez, S Barraud, M Sanquer, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 26.4. 1-26.4. 4, 2013
42013
Dielectric confinement and fluctuations of the local density of state in the source and drain of an ultra scaled SOI NMOS transistor
M Pierre, B Roche, X Jehl, M Sanquer, R Wacquez, M Vinet, O Cueto, ...
2010 Silicon Nanoelectronics Workshop, 1-2, 2010
42010
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