| A write time of 6 ns for quantum dot–based memory structures M Geller, A Marent, T Nowozin, D Bimberg, N Akçay, N Oncan Applied Physics Letters 92 (9), 092108-092108-3, 2008 | 127 | 2008 |
| The QD-Flash: a quantum dot-based memory device A Marent, T Nowozin, M Geller, D Bimberg Semiconductor Science and Technology 26 (1), 014026, 2011 | 123 | 2011 |
| Hole-based memory operation in an InAs/GaAs quantum dot heterostructure A Marent, T Nowozin, J Gelze, F Luckert, D Bimberg Applied Physics Letters 95 (24), 242114, 2009 | 54 | 2009 |
| The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory M Hayne, RJ Young, EP Smakman, T Nowozin, P Hodgson, JK Garleff, ... Journal of Physics D: Applied Physics 46 (26), 264001, 2013 | 52 | 2013 |
| Temperature and electric field dependence of the carrier emission processes in a quantum dot-based memory structure T Nowozin, A Marent, M Geller, D Bimberg, N Akcay, N Öncan Applied Physics Letters 94 (4), 042108, 2009 | 51 | 2009 |
| Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots T Nowozin, A Marent, L Bonato, A Schliwa, D Bimberg, EP Smakman, ... Physical review b 86 (3), 035305, 2012 | 50 | 2012 |
| 800 meV localization energy in GaSb/GaAs/Al0. 3Ga0. 7As quantum dots T Nowozin, L Bonato, A Högner, A Wiengarten, D Bimberg, WH Lin, ... Applied Physics Letters 102 (5), 052115, 2013 | 48 | 2013 |
| Materials for future quantum dot-based memories T Nowozin, D Bimberg, K Daqrouq, MN Ajour, M Awedh Journal of Nanomaterials 2013, 59, 2013 | 41 | 2013 |
| Towards an universal memory based on self-organized quantum dots M Geller, A Marent, T Nowozin, D Feise, K Pötschke, N Akcay, N Öncan, ... Physica E: Low-dimensional Systems and Nanostructures 40 (6), 1811-1814, 2008 | 38 | 2008 |
| 230 s room-temperature storage time and 1.14 eV hole localization energy in In0. 5Ga0. 5As quantum dots on a GaAs interlayer in GaP with an AlP barrier L Bonato, EM Sala, G Stracke, T Nowozin, A Strittmatter, MN Ajour, ... Applied Physics Letters 106 (4), 042102, 2015 | 30 | 2015 |
| Growth of In0. 25Ga0. 75As quantum dots on GaP utilizing a GaAs interlayer G Stracke, A Glacki, T Nowozin, L Bonato, S Rodt, C Prohl, A Lenz, ... Applied Physics Letters 101 (22), 223110-223110-4, 2012 | 27 | 2012 |
| Self-Organized Quantum Dots for Memories: Electronic Properties and Carrier Dynamics T Nowozin Springer Science & Business Media, 2013 | 26 | 2013 |
| Time-resolved high-temperature detection with single charge resolution of holes tunneling into many-particle quantum dot states T Nowozin, A Marent, G Hönig, A Schliwa, D Bimberg, A Beckel, ... Physical Review B 84 (7), 075309, 2011 | 24 | 2011 |
| 3 ns single-shot read-out in a quantum dot-based memory structure T Nowozin, A Beckel, D Bimberg, A Lorke, M Geller Appl. Phys. Lett. 104, 053111, 2014 | 16 | 2014 |
| Self-organized quantum dots for future semiconductor memories M Geller, A Marent, T Nowozin, D Bimberg Journal of Physics: Condensed Matter 20 (45), 454202, 2008 | 15 | 2008 |
| GaSb quantum dots on GaAs with high localization energy of 710meV and an emission wavelength of 1.3 µm J Richter, J Strassner, TH Loeber, H Fouckhardt, T Nowozin, L Bonato, ... Journal of Crystal Growth 404, 48-53, 2014 | 14 | 2014 |
| Antimony-based quantum dot memories D Bimberg, A Marent, T Nowozin, A Schliwa SPIE OPTO, 79470L, 2011 | 12 | 2011 |
| MEMORY A Marent, M Geller, T Nowozin, D Bimberg US Patent 8,331,142, 2012 | 10* | 2012 |
| Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots T Nowozin, A Wiengarten, L Bonato, D Bimberg, WH Lin, SY Lin, ... Journal of Nanotechnology 2013, 2013 | 4 | 2013 |
| Room-temperature hysteresis in a hole-based quantum dot memory structure T Nowozin, M Narodovitch, L Bonato, D Bimberg, MN Ajour, K Daqrouq, ... Journal of Nanotechnology 2013, 2013 | 4 | 2013 |
