Experimental demonstration of a second-order memristor and its ability to biorealistically implement synaptic plasticity S Kim, C Du, P Sheridan, W Ma, SH Choi, WD Lu Nano letters 15 (3), 2203-2211, 2015 | 562 | 2015 |
Comprehensive physical model of dynamic resistive switching in an oxide memristor S Kim, SH Choi, W Lu ACS nano 8 (3), 2369-2376, 2014 | 479 | 2014 |
Memristors for Energy-Efficient New Computing Paradigms DS Jeong, KM Kim, S Kim, BJ Choi, CS Hwang Advanced Electronic Materials, 2016 | 391 | 2016 |
Sensitivity of threshold voltage to nanowire width variation in junctionless transistors SJ Choi, DI Moon, S Kim, JP Duarte, YK Choi IEEE Electron Device Letters 32 (2), 125-127, 2010 | 350 | 2010 |
Pattern Recognition Using Carbon Nanotube Synaptic Transistors with an Adjustable Weight Update Protocol S Kim, B Choi, M Lim, J Yoon, J Lee, HD Kim, SJ Choi ACS Nano, 2017 | 315 | 2017 |
Physical electro-thermal model of resistive switching in bi-layered resistance-change memory S Kim, SJ Kim, KM Kim, SR Lee, M Chang, E Cho, YB Kim, CJ Kim, ... Scientific reports 3, 1680, 2013 | 294 | 2013 |
High speed flash memory and 1T-DRAM on dopant segregated Schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications SJ Choi, JW Han, S Kim, DH Kim, MG Jang, JH Yang, JS Kim, KH Kim, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 267 | 2008 |
A novel TFT with a laterally engineered bandgap for of 3D logic and flash memory SJ Choi, JW Han, S Kim, DI Moon, M Jang, YK Choi 2010 Symposium on VLSI Technology, 111-112, 2010 | 259 | 2010 |
Performance breakthrough in NOR flash memory with dopant-segregated Schottky-barrier (DSSB) SONOS devices SJ Choi, JW Han, S Kim, DI Moon, MG Jang, JS Kim, KH Kim, GS Lee, ... 2009 Symposium on VLSI Technology, 222-223, 2009 | 258 | 2009 |
Resistive switching characteristics of sol–gel zinc oxide films for flexible memory applications S Kim, H Moon, D Gupta, S Yoo, YK Choi IEEE Transactions on Electron Devices 56 (4), 696-699, 2009 | 218 | 2009 |
Resistive switching of aluminum oxide for flexible memory S Kim, YK Choi Applied Physics Letters 92, 2008 | 170 | 2008 |
Crossbar RRAM arrays: Selector device requirements during write operation S Kim, J Zhou, WD Lu IEEE Transactions on Electron Devices 61 (8), 2820-2826, 2014 | 165 | 2014 |
Carbon Nanotube Synaptic Transistor Network for Pattern Recognition S Kim, J Yoon, HD Kim, SJ Choi ACS Applied Materials & Interfaces, 2015 | 140 | 2015 |
Self-Limited Switching in Ta2O5/TaOx Memristors Exhibiting Uniform Multilevel Changes in Resistance KM Kim, SR Lee, S Kim, M Chang, CS Hwang Advanced Functional Materials, 2015 | 134 | 2015 |
Tuning Resistive Switching Characteristics of Tantalum-Oxide Memristors through Si Doping S Kim, SH Choi, J Lee, WD Lu ACS Nano, 2014 | 132 | 2014 |
A Comprehensive Study of the Resistive Switching Mechanism in -Structured RRAM S Kim, YK Choi IEEE Transactions on Electron Devices 56 (12), 3049-3054, 2009 | 117 | 2009 |
Structure Effects on Resistive Switching of Devices for RRAM Applications LE Yu, S Kim, MK Ryu, SY Choi, YK Choi IEEE Electron Device Letters 29 (4), 331-333, 2008 | 115 | 2008 |
An underlap channel-embedded field-effect transistor for biosensor application in watery and dry environment JY Kim, JH Ahn, SJ Choi, M Im, S Kim, JP Duarte, CH Kim, TJ Park, ... IEEE Transactions on Nanotechnology 11 (2), 390-394, 2011 | 110 | 2011 |
A transistor-based biosensor for the extraction of physical properties from biomolecules S Kim, D Baek, JY Kim, SJ Choi, ML Seol, YK Choi Applied Physics Letters 101 (7), 2012 | 108 | 2012 |
Utilizing multiple state variables to improve the dynamic range of analog switching in a memristor YJ Jeong, S Kim, WD Lu Applied Physics Letters 107, 173105, 2015 | 105 | 2015 |